• Korean Journal of Materials Research
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• v.8 no.6
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• pp.532-537
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• 1998

The purpose of this study was to investigate the behavior of ozone in DI water and the reaction with wafers during the semiconductor wet cleaning process. The solubility of ozone in DI water was not only dependent on the temperature but also directly proportional to the input concentration of ozone. The lower the initial ozone concentration and the temperature, the longer the half-life time of ozone. The reaction order of ozone in DI water was calculated to be around 1.5. The redox potential reached a saturation value in 5min and slightly increased as the input ozone concentrations increased. The completely hydrophilic surface was created in Imin when HF etched silicon wafer was cleaned in ozonized DI water containing higher ozone concentrations than 2ppm. Spectroscopic ellipsometry measurements showed that the chemical oxide formed by ozonized DI water was measured to be thicker than that by piranha solution. The wafers contaminated with a non-ionic surfactant were more effectively cleaned in ozonized DI water than in piranha and ozonized piranha solutions.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.22-30
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• 2002

The nucleation of copper(Cu) with (hfac)iu(VTMS) oganometallic precursor is investigated for Si, $Sio_2$, TiN, $W_2N$ substrates. As the deposition temperature is increased, the dominant growth mechanism is observed to change from the nucleation of Cu particles to the clustering of Cu nuclei around $180^{\ciec}C$, independent of the employed substrates. It is also observed that the cleaning of substrate surfaces with the diluted HF solution improves the selectivity of Cu nucleation between TiN and $Sio_2$ substrates. Dimethyldichlorosilane treatment is found to passivate the surface of TiN substrate, contrary to the generally accepted belief, when the TiN substrate is cleaned by $H_2O_2$ solution before the treatment.

• Journal of Korean Neurosurgical Society
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• v.59 no.5
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• pp.458-465
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• 2016

Objective : The aim of this study is to analyze the differences in the incidence, predicting factors, and clinical course of chronic subdural hematoma (CSDH) following surgical clipping between unruptured (UIA) and ruptured intracranial aneurysm (RIA). Methods : We conducted a retrospective analysis of 752 patients (UIA : 368 and RIA : 384) who underwent surgical clipping during 8 years. The incidence and predicting factors of CSDH development in the UIA and RIA were compared according to medical records and radiological data. Results : The incidence of postoperative CSDH was higher in the UIA (10.9%) than in the RIA (3.1%) (p=0.000). In multivariate analysis, a high Hounsfield (HF) unit (blood clots) for subdural fluid collection (SFC), persistence of SFC ${\geq}5mm$ and male sex in the UIA and A high HF unit for SFC and SFC ${\geq}5mm$ without progression to hydrocephalus in the RIA were identified as the independent predicting factors for CSDH development (p<0.05). Conclusion : There were differences in the incidence and predicting factors for CSDH following surgical clipping between UIA and RIA. Blood clots in the subdural space and persistence of SFC ${\geq}5mm$ were predicting factors in both UIA and RIA. However, progression to hydrocephalus may have in part contributed to low CSDH development in the RIA. We suggest that cleaning of blood clots in the subdural space and efforts to minimize SFC ${\geq}5mm$ at the end of surgery is helpful to prevent CSDH following aneurysmal clipping.

• Restorative Dentistry and Endodontics
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• v.41 no.2
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• pp.106-113
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• 2016

Objectives: This study evaluated the effects of different surface conditioning methods on the bond strength of orthodontic brackets to glazed full-zirconia surfaces. Materials and Methods: Glazed zirconia (except for the control, Zirkonzahn Prettau) disc surfaces were pre-treated: PO (control), polishing; BR, bur roughening; PP, cleaning with a prophy cup and pumice; HF, hydrofluoric acid etching; AA, air abrasion with aluminum oxide; CJ, CoJet-Sand. The surfaces were examined using profilometry, scanning electron microscopy, and electron dispersive spectroscopy. A zirconia primer (Z-Prime Plus, Z) or a silane primer (Monobond-S, S) was then applied to the surfaces, yielding 7 groups (PO-Z, BR-Z, PP-S, HF-S, AA-S, AA-Z, and CJ-S). Metal bracket-bonded specimens were stored in water for 24 hr at $37^{\circ}C$, and thermocycled for 1,000 cycles. Their bond strengths were measured using the wire loop method (n = 10). Results: Except for BR, the surface pre-treatments failed to expose the zirconia substructure. A significant difference in bond strengths was found between AA-Z ($4.60{\pm}1.08MPa$) and all other groups ($13.38{\pm}2.57-15.78{\pm}2.39MPa$, p < 0.05). For AA-Z, most of the adhesive remained on the bracket. Conclusions: For bracket bonding to glazed zirconia, a simple application of silane to the cleaned surface is recommended. A zirconia primer should be used only when the zirconia substructure is definitely exposed.

• Applied Chemistry for Engineering
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• v.29 no.1
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• pp.10-17
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• 2018

POU (point of use) scrubbers were applied for the treatment of waste gases including PFCs (perfluorocompounds) exhausted from the CVD (chemical vapor deposition), etching, and cleaning processes of semiconductor and display manufacturing plant. The GWP (global warming potential) and atmosphere lifetime of PFCs are known to be a few thousands higher than that of $CO_2$, and extremely high temperature more than 3,000 K is required to thermally decompose PFCs. Therefore, POU gas scrubbers based on the thermal plasma technology were developed for the effective control of PFCs and industrial application of the technology. The thermal plasma technology encompasses the generation of powerful plasma via the optimization of the plasma torch, a highly stable power supply, and the matching technique between two components. In addition, the effective mixture of the high temperature plasma and waste gases was also necessary for the highly efficient abatement of PFCs. The purpose of this paper was to provide not only a useful technical information of the post-treatment process for the waste gas scrubbing but also a short perspective on R&D of POU plasma gas scrubbers.

• Journal of Environmental Health Sciences
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• v.42 no.6
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• pp.385-395
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• 2016

Objectives: The aim of this study was to assess exposure to VOCs and PAHs and the health effects on volunteers who participated in an oil spill cleanup in Yeosu. Methods: Atmospheric VOCs were evaluated in the vicinity of the accident site and questionnaire surveys were conducted to identify personal characteristics and acute health symptoms of clean-up workers seven days after the accident. The levels of metabolites of VOCs (t,t-MA, HA, PGA, MA, MHA) and PAHs (2-NAP, 1-OHP, 2-HF, 1-HPH), oxidative stress markers (TABARS, 8-OHdG) in the urine of workers were analyzed. Their correlation was determined by multiple regression analysis with SAS ver. 9.4. Results: Although the concentration of atmospheric VOCs in the residential areas were low at the time of survey, the levels of VOCs and PAHs metabolites in clean-up workers were higher than those in the control group after clean-up activities. The levels of urinary VOC and PAH metabolites were significantly increased after clean-up compared to those measured before participation. The thiobarbituric acid reactive substance (TBARS) concentrations were also increased and showed significant correlations with those of metabolites of benzene. Conclusion: This study shows that oil spill clean-up activities affect exposure to VOCs and PAHs and the health of clean-up workers. The results suggest the need for check-ups of participants in oil spill cleaning work.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.3
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• pp.221-230
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• 2006

Recently, the need for esthetic results has increased the interest for all-ceramic crown prosthesis. Furthermore, the development of zirconium core via CAD/CAM system has allowed the all ceramic restorations to be applied to almost all fixed prosthesis situations. But, the increased strength has been reported to increase in proportion with the bond strength of cement, and recently, the tribochemical system which increases the bond strength through, silica coating and silanization has been introduced. The purpose of this study was to compare the $Rocatec^{TM}$ system and $CoJet^{TM}$ system with the traditional acid etching and silanization method of the irconium based ceramic. The surface character was observed via SEM(X2000), and the bond strength with the resin cement were measured. 50 In-Ceram Zirconia (Adens, Korea) discs were fabricated and embedded in resin, group 1 was treated with glass-bead blasting and cleaning, group 2 was treated with 20% HF for 10 minutes and silanized, group 3 was treated with the $Rocatec^{TM}$ system, and group 4 was treated with the $CoJet^{TM}$ system. Each group was comprised of 10 specimens. The specimens were cemented to a $3mm{\times}5mm$ resin block with Super-Bond C&B. The shear bond strength was measured with the $Instron^{(R)}$ 8871 at a crosshead speed of 0.5mm/min. The results were as follows. 1. According to SEM results, there were little difference between group 1 & group 2, but in group 3 and 4, silica coating was detected and there was increase in surface roughness. 2. The shear bond strength decreased in the order of group 3(46.28MPa), group 4(42.04MPa), group 2(31.56MPa), and group 1(27.46MPa). 3. There was significant differnce between group 1&2 and group 3&4(p<0.05). From the results above, it can be considered that the conventional method of acid etching and silane treatment cannot increase the bond strength with resin cements, and that by applying the tribochemical system of $Rocatec^{TM}$ system and $CoJet^{TM}$ system, we can achieve a stronger all ceramic restoration. Further studies on surface treatments to increase the bond strength are thought to be needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.247-251
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• 2004

반도체 소자의 제조에 있어 실리콘 표면에 성장한 자연산화막을 제거하기 위해 일반적으로 습식 세정 기술이 이용되어 왔다. 하지만 소자의 최소 선폭(design rule)이 nano급으로 고집적화 됨에 따라 contact hole 바닥의 자연산화막을 깨끗이 제거하는데 있어서 그 한계를 나타나고 있다. 이에 대한 효과적인 대안 공정으로 가스 건식 세정 기술이 연구되고 있다. 본 논문에서는 한 번에 50매 이상의 웨이퍼를 처리함으로써 생산성 측면에서 월등한 배치식 설비에서 원거리 플라즈마(remote plasma) 장치에서 2.450Hz의 마이크로웨이브(${\mu}$-wave)에 의해 형성시킨 수소라디칼과 $NF_3$ 가스를 이용하여 실리콘에 결함을 주지 않고 자연산화막을 선택적으로 제거하는 공정에 대해 고찰하였다. AFM을 이용한 표면분석, TEM을 이용한 물성분석, 그리고 ToF-SIMS 및 XPS를 이용한 화학 분석을 습식 및 건식 세정을 비교 평가한 결과, 건식 세정 공정이 실리콘 표면에 결함을 주지 않고 자연산화막을 제거 할 수 있음을 확인하였다. 산화막$(SiO_2)$, 질화막$(Si_3N_4)$, 그리고 다결정 실리콘(Poly-Si) 등의 각 막질별 식각 특성을 고찰하였으며, $NH_3$의 캐리어 가스인 $N_2$의 주입량을 조절함으로써 수소라디칼 형성 효율의 개선이 가능하였으며, 이로부터 게이트와 소스/드레인 사이를 절연하기 위해 이용되는 질화막의 식각 선택비를 2배 정도 개선할 수 있었다. nano급 소자에 실장하여 평가한 결과에서 불산(HF)에 의한 습식 세정 방식에 비하여 약 $20{\sim}50%$ 정도의 contact 저항 감소 효과가 있음이 확인되었다.두 소자 모두 $40mA/cm^2$ 에서 이상적인 화이트 발란스와 같은(0.33,0.33)의 색좌표를 보였다.epsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.한 관심이 높아지고 있다. 그러나 고 자장 영상에서의 rf field 에 의한 SAR 증가는 중요한 제한 요소로 부각되고 있다. 나선주사영상은 SAR 문제가 근원적으로 발생하지 않고, EPI에 비하여 하드웨어 요구 조건이 낮아 고 자장에서의 고속영상방법으로 적합하다. 본 논문에서는 고차 shimming 을 통하여 불균일도를 개선하고, single shot 과 interleaving 을 적용한 multi-shot 나선주사영상 기법으로 $100{\times}100$에서 $256{\times}256$의 고해상도 영상을 얻어 고 자장에서 초고속영상기법으로 다양한 적용 가능성을 보였다. 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확