Journal of the Institute of Electronics Engineers of Korea TE (대한전자공학회논문지TE)

The Institute of Electronics and Information Engineers (대한전자공학회)
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(Substrate and pretreatment dependence of Cu nucleation by metal-organic chemical vapor deposition)

유기금속화학기상증착법에 의해 증착된 구리 핵의 기판과 전처리의 의존성

  • Published : 2002.03.01
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Abstract

The nucleation of copper(Cu) with (hfac)iu(VTMS) oganometallic precursor is investigated for Si, $Sio_2$, TiN, $W_2N$ substrates. As the deposition temperature is increased, the dominant growth mechanism is observed to change from the nucleation of Cu particles to the clustering of Cu nuclei around $180^{\ciec}C$, independent of the employed substrates. It is also observed that the cleaning of substrate surfaces with the diluted HF solution improves the selectivity of Cu nucleation between TiN and $Sio_2$ substrates. Dimethyldichlorosilane treatment is found to passivate the surface of TiN substrate, contrary to the generally accepted belief, when the TiN substrate is cleaned by $H_2O_2$ solution before the treatment.

Si, SiO/sup 2/, TiN, W/sup 2/N 기판 위에 (hfac)Cu(VTMS) 유기금속 전구체로 증착된 구리 핵을 조사하였다. 증착온도가 증가함에 따라, 기판 종류에 상관없이 180。C에서 구리 핵이 클러스터링으로 성장하는 메커니즘을 관찰하였다. 또한, HF용액으로 세척한 TiN 과 SiO/sup 2/가 공존하는 기판에서 구리 핵의 선택성이 향상됨을 관찰하였다. TiN을 H/sup 2/O/sup 2/로 세척한 후 Dimethyldichlorosilane 처리했을 때 표면이 passivation됨을 확인하였다.

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References

  1. S. Kyoichi, H. Shibata, Conf. Proc. ULSI-IX, MRS, New York, 1994, p. 23
  2. T. Ohmi, K. Tsubouchi, Solid State Technol., vol. 35 (1992) p. 47
  3. S. P. Murarka, S. W. Hymes, Crit. Rev. Solid State Mat. Sci., vol. 20 (1995) p. 87
  4. Y. Igarashi, T. Yamanobe, T. Ito, Thin Solid Films, vol. 262 (1995) p. 124
  5. A. Sherman, J. Electrochem. Soc., vol. 137 (1990) p. 1892
  6. C. W. Lee, Y. T. Kim, J. Y. Lee, Appl. Phys. Lett., vol. 64 (1994) p. 619
  7. Y. J. Lee, B. S. Suh, C. O. Park, Thin Solid Films, vol. 357 (1999) p. 237
  8. J. C. Chiou, K. C. Juang, M. C. Chen, J. Electrochem. Soc., vol. 142 (1995) p. 177
  9. S. K. Koh, S. C. Choi, K. H. Kim, H. J. Jung, G. J. Choi, H. S. Yang, Y. S. Cho, Thin Solid Films, vol. 347 (1999) p. 121
  10. W. L. Gladfelter, Chem. Mater. vol. 5 (1993) p. 1372
  11. A. Jain, J. Farkas, T. T. Kodas, K. M. Chi, M. J. Hampden-Smith, Appl. Phys. Lett., vol. 61 (1992) p. 2662, and references therein
  12. S. Takeda, M. Fukawa, Y. Hayashi, K. Matsumoto, Thin Solid Films, vol. 339 (1999) p. 220
  13. S. L. Cohen, M. Liehr, S. Kasi, Appl. Phys. Lett., vol. 60 (1992) p. 50
  14. S. K. Lakshmanan, W. N. Gill, Thin Solid Films, vol. 338 (1997) p. 24
  15. S. Kim, D. J. Choi, K. R. Yoon, K. H. Kim, S. K. Koh, Thin Solid Films, vol. 311 (1997) p. 218
  16. N. Awaya and Y. Arita, Thin Solid Films, vol. 262 (1995) p. 12
  17. H. J. Ernst, F. Fabre, and J. Lapujoulade, Phys. Rev., B 46 (1992) p. 1929
  18. G. Boisvert and L. J. Lewis, Phys. Rev., B 56 (1997) p. II 7643
  19. A. Jain, K. M. Chi, T. T. Kodas, M. J. Hampden-Smith, J. Electrochem. Soc., vol. 140 (1993) p. 1434
  20. J. B. Webb, D. Northcott, I. Emesh, Thin Solid Films, vol. 270 (1995) p. 483