• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.103.1-103.1
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• 2017

Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) condition with various powers. The effects of ICP power, ranging from 0 to 200 W, on the coating microstructure, corrosion and mechanical properties were systematically investigated with FE-SEM, AFM, potentiostat and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of HfN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Average grain size and nano hardness of HfN coatings were also investigated with increasing ICP powers.

• 한국표면공학회지
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• 제53권2호
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• pp.67-71
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• 2020

For deposition technology using plasma, it plays an important role in improving film deposited with high ionization rate through high density plasma. Various deposition methods such as high-power impulse magnetron sputtering and ion-beam sputtering have been developed for physical vapor deposition technology and are still being studied. In this study, it is intended to control plasma using inductive coupled plasma (ICP) antennas and use properties to improve the properties of Hafnium nitride (HfN) films using ICP assisted magnetron sputtering (ICPMS). HfN film deposited using ICPMS showed a finer grain sizes, denser microstructure and better mechanical properties as ICP power increases. The best mechanical properties such as nanoindentation hardness of 47 GPa and Young's modulus of 401 GPa was obtained from HfN film deposited using ICPMS at ICP power of 200 W.

• 전기학회논문지
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• 제56권2호
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• pp.349-354
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• 2007

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.448-454
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• 2009

Hydrogen was produced from water plasma excited in high frequency (HF) inductively coupled tubular reactor. Mass spectrometry was used to monitor gas phase species at various process conditions, Water dissociation rate depend on the process parameters such as ICP power, $H_{2}O$ flow-rate and process pressure, Water dissociation percent in ICP reactor decrease with increase of chamber pressure, while increase with increase of ICP power and $H_{2}O$ flow rate. The effect of $CH_4$ gas addition to a water plasma on the hydrogen production has been studied in a HF ICP tubular reactor. The main roles of $CH_4$ additive gas in $H_{2}O$ plasma are to react with 0 radical for forming $CO_x$ and CHO and resulting additional $H_2$ production. Furthermore, $CH_4$ additives in $H_{2}O$ plasma is to suppress reverse-reaction by scavenging 0 radical. But, process optimization is needed because $CH_4$ addition has some negative effects such as cost increase and $CO_x$ emission.

• 분석과학
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• 제26권6호
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• pp.375-380
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• 2013

본 연구에서는 암석과 퇴적물 시료를 대상으로 이플루오린화 암모늄을 이용한 시료 분해법을 적용하여 open vessel digestion 후 유도결합 플라즈마 질량분석법(Inductively coupled plasma mass spectrometry, ICP/MS)으로 게르마늄을 분석하였다. 미국 지질조사소 표준물질 중 QLO-1, SDO-1을 사용하였고, 실제 시료로 GeoPT용 퇴적물, 현무암, 점토를 사용하였다. 휘발하여 손실되기 쉬운 것으로 알려진 게르마늄을 이플루오린화 암모늄($NH_4HF_2$) 시료 분해법을 사용함으로서 게르마늄 휘발 억제와 동시에 암석 및 퇴적물을 open vessel digestion하에서 간단하고 빠르게 분해 가능하였으며, 또한 이플루오린화 암모늄 분해법에 과산화수소를 함께 사용해도 게르마늄의 회수율에 영향을 끼치지 않았다. ICP/MS에 의한 게르마늄 분석 결과, MDL (method detection limit)은 0.015 ${\mu}g/g$, 게르마늄 회수율은 106~128% 이었다.

• 분석과학
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• 제27권6호
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• pp.352-356
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• 2014

최근 붕소를 철강에 첨가함으로써 철강의 성질을 개선시키는 여러 연구들이 알려져 있다. 이러한 연구를 위하여 원자 흡광광도법, ICP-OES, ICP-MS에 의한 철강 중 붕소 분석 방법에 관한 연구들이 보고되고 있으며, 철강 중 붕소 정량 시 붕소의 휘발 손실 및 고농도 철 매트릭스로 인한 붕소 분석 방해 등의 어려움이 알려져 있다. 이 연구에서는 붕소의 휘발 손실을 억제 가능한 철강 시료 분해 방법 및 매트릭스 분리과정 없이 ICP-MS에 의하여 철강 내 붕소를 정량할 수 있는 방법을 연구하고자 하였다. 질산-이플루오린화 암모늄을 이용하여 철강 시료 중 붕소의 휘발 손실을 억제하고 시료의 완전 분해가 가능하였으며, ICP-MS에 의하여 다량의 철 매트릭스 중 붕소 정량이 가능하였다. 서로 다른 붕소 함량의 철강 표준물질을 대상으로 시료 분해 및 ICP-MS에 의한 붕소 정량 결과 회수율은 103~111%, 상대표준편차는 5% 이하였으며, 방법검출한계(MDL)는 $1.17{\mu}g/g$ 이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• 대한화학회지
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• 제41권8호
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• pp.399-405
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• 1997

수소화합물 발생법-유도결합플라스마 원자방출 분광기로 암석및 퇴적물 시료중에 미량으로 존재하는 게르마늄을 효과적으로 분석하는 방법을 찾는 실험이다. 고체시료를 산분해하여 용액화할 때 게르마늄은 휘발성이 강한 화합물을 형성하지만 $H_3PO_4$가 존재하면 휘발이 억제되므로 $HF-HNO_3-H_3PO_4$의 혼합산을 사용하면 게르마늄의 휘발없이 open digestion system으로 고체 시료의 완전 용해가 가능하다. 또한 이 용액으로 다른 전처리 과정없이 수소화합물 발생법으로 분석이 가능하다. 게르마늄 수소화합물 발생법에서는 보조산으로 5M $H_3PO_4$와 환원제로 1% $NaBH_4$을 사용하여 검출한계를 0.08 ppb까지 얻을 수 있었으며 이 조건에서는 시료중에 과량으로 존재하는 공존원소의 방해도 무시할 수 있었다. 표준시료의 분석값이 보고된 값과 잘 일치하였으며 ICP-MS의 용액시료 도입법으로 측정한 값과도 잘 일치하였다.

• Corrosion Science and Technology
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• 제22권6호
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• pp.393-398
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• 2023

Properties of hafnium nitride (HfN) coatings are affected by deposition conditions, most often by the sputtering technique. Appropriate use of different magnetron sputtering modes allows control of the structural development of the film, thereby enabling adjustment of its properties. This study compared properties of HfN coatings deposited by direct current magnetron sputtering (dcMS), mid-frequency direct current magnetron sputtering (mfMS), and inductively coupled plasma-assisted magnetron sputtering (ICPMS) systems. The microstructure, crystalline, and mechanical properties of these HfN coatings were investigated by field emission electron microscopy, X-ray diffraction, atomic force microscopy, and nanoindentation measurements. HfN coatings deposited using ICPMS showed smooth and highly dense microstructures, whereas those deposited by dcMS showed rough and columnar structures. Crystalline structures of HfN coatings deposited using ICPMS showed a single δ-HfN phase, whereas those deposited using dcMS and mfMS showed a mixed δ-HfN and HfN_0.4 phases. Their performance were increased in the order of dcMS < mfMS < ICPMS, with ICPMS achieving a value of 47.0 GPa, surpassing previously reported results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).