• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.675-676
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• 2008

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.448-452
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• 2005

Punching/blanking/shearing is among the oldest and most frequently used sheet metal forming process. We have developed the shear device for burrless cutting using the micro wire. Since the burr minimization and fine shear plane, this paper is a study on the effect of the shear angle and clearance of the cutter-cutter. And, we confirm the tendency of the shear plane. It is impossible to completely remove the burr in the shearing process. In order to minimize the burr size and fine shear plane, we have accomplished the various experiment conditions such as the shear angle and clearance. Despite the quality of shear plane is not good enough yet, it is possible to make the burr minimization and fine shear plane by the optimization of process parameters.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1808-1810
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• 2004

This paper describes the discharge characteristics of liquid $SF_6$ (-41$[^{\circ}]$, 1.7[atm]) and $LN_2$ for plane to plane, needle to plane, plane to needle and sphere to plane electrode with gap variations from 1[mm] to 12[mm]. From this result, the breakdown voltage was increased with increasing gap length. Especially, the formation of bubbles by evaporation was observed in spite of non-applying voltage source. A corona is created of the applying voltage from the bubbles on the electrodes applied voltage. We consider it equal mechanism of corona as void exists in solid insulator. The results of liquid $SF_6$ and $LN_2$ discharge characteristics were caused by bubble formed evaporation and applied electric field voltage. Corona was happened to weak bubble and was proceed to new bubble breakdown.

• Communications of the Korean Mathematical Society
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• v.9 no.4
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• pp.905-915
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• 1994

Let $M_g$ be the moduli space of isomorphism classes of genus g smooth curves. It is a quasi-projective variety of dimension 3g - 3, when $g > 2$. It is known that a complete subvariety of $M_g$ has dimension $< g-1 [D]$. In general it is not known whether this bound is rigid. For example, it is not known whether $M_4$ has a complete surface in it. But one knows that there is a complete curve through any given finite points [H]. Recently, an explicit example of a complete curve in moduli space is given in [G-H]. In [G-H] they constructed a complete curve of $M_3$ as an intersection of five hypersurfaces of the Satake compactification of $M_3$. One way to get a complete curve of $M_3$ is to find a complete one dimensional family $p : X \to B$ of plane quartics which gives a nontrivial morphism from the base space B to the moduli space $M_3$. This is because every non-hyperelliptic smooth curve of genus three can be realized as a nonsingular plane quartic and vice versa. This paper has come out from the effort to find such a complete family of plane quartics. Since nonsingular quartics form an affine space some fibers of p must be singular ones. In this paper, due to the semistable reduction theorem [M], we search singular plane quartics which can occur as singular fibers of the family above. We first list all distinct plane quartics in terms of singularities.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.33-38
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• 1994

In this paper, waveguide banpass filters using H-plane step discontinuities are designed based on the field theory analysis and optimization of the resonator lengths as well as dimensions of discontinuities, instead of the conventional synthesis method based on the equivalent circuit. The waveguide inductive obstacles introduced by H-plane step discontinuities analyzed using mode-matching method and the generalized scattering parameters are derived. Using the derived scattering parameters of the discontinuities as well as those of resonators, waveguide bandpass filters are designed through optimization method, modified Razor search method proposed by J.H.Bandler. Using this design procedures, waveguide bandpass filters are designed and tested at X-band(center frequency 10GHz) as well as Ka-band(center frequency 35GHz).

• Bulletin of the Korean Mathematical Society
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• v.37 no.3
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• pp.437-450
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• 2000

On the setting of the half-plane H={x+iy$\mid$y>0} of the complex plane, we study some properties of weighted Bergman spaces and their duality. We also obtain some characterizations of compact Toeplitz operators.

• The Journal of the Petrological Society of Korea
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• v.25 no.2
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• pp.151-163
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• 2016

The characteristics of the rock cleavage in Jurassic granite from Geochang were analysed. The evaluation for the three directions of rock cleavages was performed using the parameters such as (1) frequency of microcrack spacing(N), (2) total spacing(${\leq}1mm$), (3) mean spacing($S_{mean}$), (4) difference value($S_{mean}-S_{median}$) between mean spacing($S_{mean}$) and median spacing($S_{median}$), (5) density of spacing(${\rho}$), (6) difference value between two exponents for the whole range of the diagrams(${\lambda}_H-{\lambda}_L$), (7) mean value of exponent(${\lambda}_M$), (8) mean value of exponential constant($a_M$), (9) difference value between two exponents for the section under the initial points of intersection(${\lambda}t_H-{\lambda}t_L$), (10) mean value of exponent(${\lambda}t_M$) and (11) mean value of exponential constant($at_M$). The results of correlation analysis between the values of parameters for three rock cleavages and those for three planes are as follows. The values of (I) parameters(1, 2, 7 and 8) and (II) parameters(3, 4 and 5) are in orders of (I) H(hardway, (H1 + H2)/2) < G(grain, (G1 + G2)/2) < R(rift, (R1 + R2)/2) and (II) R < G < H. On the contrary, the values of the above two groups(I~II) of parameters for three planes show reverse orders. Besides, the values of parameter $6({\lambda}_H-{\lambda}_L)$, parameter $9({\lambda}t_H-{\lambda}t_L)$, parameter $10({\lambda}t_M)$ and parameter $11(at_M)$ for three planes are in orders of R(rift plane, (G1 + H2)/2) < H(hardway plane, (R2 + G2)/2) < G(grain plane, (R1 + H2)/2), H < G < R, H < R < G and R < H < G, respectively. The values of the above four parameters for three rock cleavages show the various orders of R < H < G, R < H < G, H < G < R and H < G < R, respectively. Meanwhile, the spacing values equivalent to the initial points of contact and intersection between the two directions of diagrams were derived. The above spacing values for three rock cleavages are in order of rift(R1 and R2) < grain(G1 and G2) < hardway(H1 and H2). The spacing values for three planes are in order of rift plane(G1 and H1) < hardway plane(R2 and G2) < grain plane(R1 and H2). In particular, the intersection angles for three rock cleavages and three planes are in order of rift and rift plane < hardway and hardway plane < grain and grain plane. Consequently, the two diagrams of rift(R1 and R2) and rift plane(G1 and H1) show higher frequency of the point of contact and intersection. These characteristics of change were derived through the general chart for three planes and three rock cleavages. Lastly, the correlation analysis through the values of parameters along with the distribution pattern is useful for discriminating three quarrying planes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.1-5
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• 2007

The structural and morphological properties of planar, nonpolar (11-20) a-plane GaN layers grown by hydride vapor phase epitaxy on (1-102) r-plan sapphire substrates are characterized. We report on the effect of low temperature ($500/550/600/660^{\circ}C$) AIN buffer layers on the structural properties of HVPE grown a-GaN kayers. and for the comparison, low temperature GaN and InGaN buffer layers are also tried for the growth of a-plane GaN layers. The structural geometry of a-GaN layers is severely affected on the growth condition of low temperature buffer layers. The most planar a-GaN could be obtained with $GaCl_3$ pretreatment at the growth temperature of $820^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.