• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.382-388
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• 2000

Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.221-224
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• 2001

In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.763-768
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF In bonding process, the bonding forte and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flip-chip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed fur two types of flip-chips with different chip size and lead pitch. The bonding temperatures are chosen between $25^{\circ}C\;to\;300^{\circ}C$. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.1053-1054
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• 2009

• Laser Solutions
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• v.8 no.3
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• pp.21-26
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• 2005

A bonding process between tape-carrier package and a glass panel with anisotropic conductive film (ACF) has been investigated by making use of high power diode laser as a heat source for cure. The results from modeling of process and from optical properties of layers showed that heat absorbed from polyimide film surface and ACF layer is dominant source of curing during laser illumination. Laser ACF bonding has better bonding quality than conventional bonding in view of peel strength, flatness, pressure unbalance and processing time. New ACF bonding processes by making use of high power diode laser are proposed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.653-654
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• 2010

• Restorative Dentistry and Endodontics
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• v.24 no.1
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• pp.156-165
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• 1999

The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength between new and old composites. Circular cavities prepared on the center of acrylic resin mold and the prepared cavities were filled with composite resin. They randomly assigned into control group and 8 groups according to the difference in surface treatments of old composites; Control group: no surface treatment, Group 1: surface treated with #120 SiC paper & bonding agent, Group 2: surface treated with #400 SiC paper & bonding agent, Group 3: surface treated with #120 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 4: surface treated with #400 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 5: surface treated with #120 SiC paper, primer & bonding agent, Group 6: surface treated with #400 SiC paper, primer & bonding agent, Group 7: surface treated with #120 SiC paper, 32% $H_3PO_4$, primer & bonding agent, Group 8: surface treated with #400 SiC paper, 32% $H_3PO_4$, primer & bonding agent. New composites were applicated on the old composites of experimental groups. The shear bond strengths for the experimental specimen were measured and the results were analyzed by using one way ANOVA. The observations of surface morphology after SiC paper roughening and debonded surface morphology after shear bond strength test were done by SEM. The results were as follows; 1. Shear bond strengths for specimens roughened with #120 SiC paper matching with the particle size of coarse diamond bur were significantly higher than those for the specimens with #400 SiC paper(P<0.05). By SEM, the surface of the specimens roughened with #120 SiC paper was more irregular than the specimens with #400 SiC paper. 2. Shear bond strengths for specimens treated with 32% $H_3PO_4$ etchant, primer, bonding resin were significantly higher than those for specimens treated with 32% $H_3PO_4$ and bonding resin(P<0.05). 3. Shear bond strengths for the specimens treated with 32% $H_3PO_4$ etchant and bonding resin were significantly higher than those for specimens treated with only bonding resin(P<0.05). There was no remarkable change of surface morphology after 32% $H_3PO_4$ etching. 4. It was possible to observe mixed fracture patterns (the cohesive fracture of old composite and the adhesive fracture between old and new composite) in the specimens roughened with #120 SiC paper, but almost adhesive fracture in the specimens roughened with #400 SiC paper.

• Transactions of Materials Processing
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• v.29 no.6
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• pp.307-315
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• 2020

The cemented carbide and stainless steel were bonded using a hot-vacuum brazing method to analyze the bonding interface. Since it is suitable for the hot vacuum brazing, nickel metal was used as a binder among the main components of the cemented carbide, and a new cemented carbide material was developed by adjusting the alloy composition. The paste, which is one of the important factors affecting the hot vacuum brazing bonding, was able to improve brazing adhesion by mixing solder as Ni powder and a binder as an organic compound at an appropriate ratio. Division of the stainless steel yielded a dense brazing result. This study elucidated the interfacial characteristics of wear-resistant parts by bonding stainless steel and cemented carbide via hot vacuum brazing.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1055-1060
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• 2013

The adsorption structures of threonine on the Ge(100) surface were investigated using core-level photoemission spectroscopy (CLPES) in conjunction with density functional theory (DFT) calculations. CLPES measurements were performed to identify the experimentally preferred adsorption structure. The preferred structure indicated the relative reactivities of the carboxyl and hydroxymethyl groups as electron donors to the Ge(100) surface during adsorption. The core-level C 1s, N 1s, and O 1s CLPES spectra indicated that the carboxyl oxygen competed more strongly with the hydroxymethyl oxygen during the adsorption reaction. Three among six possible adsorption structures were identified as energetically favorable using DFT calculation methods that considered the inter- and intra-bonding configurations upon adsorption onto the Ge(100) surface. These structures were O-H dissociated N dative inter bonding, O-H dissociated N dative intra bonding, O-H dissociation bonding. One of the adsorption structures: O-H dissociated N dative inter bonding was predicted to be stable in light of the transition state energies. We thus confirmed that the most favorable adsorption structure is the O-H dissociated N dative-inter bonding structure using CLPES and DFT calculation.

• Composites Research
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• v.32 no.6
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• pp.307-313
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• 2019

Triboelectric nanogenerators (TENGs), which are combined effects of triboelectricity and electric induction, is a large-area and low-cost technology that can be applied easily in our life. In this work, we applied life supplies to TENGs and analyzed a type of chemical bonding with the ratio of C-C/C-H/C-O/C=O bonding. As the ratio of C-C bonding increases, the materials can be positively charge. On the other hands, as the ratio of C-H bonding increases, the materials can be negatively charged materials. Based on these behaviors, we got a voltage of 210V, a current of 14.6 ㎂ and a maximum power of 9.8mW. Finally, we could turn on 97 light emitting diodes (LEDs) by using a wrap as a negative material and a magnetic note as a positive material.