• 한국의학물리학회:학술대회논문집
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• 한국의학물리학회 2002년도 Proceedings
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• pp.138-140
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• 2002

The spinal cord dose is the one of the limiting factor for the radiation treatment of the head & neck (H&N) or the thorax region. Due to the fact that the cord is the elongated shaped structure, it is not an easy task to maintain the cord dose within the clinically acceptable dose range. To overcome this problem, the spinal cord partial block technique (PBT) with the dynamic Multi-Leaf Collimator (dMLC) has been developed. Three dimension (3D) conformal beam directions, which minimize the coverage of the normal organs such as the lung and the parotid gland, were chosen. The PBT field shape for each field was designed to shield the spinal cord with the dMLC. The transmission factors were determined by the forward calculation method. The plan comparisons between the conventional 3D conformal therapy plan and the PTB plan were performed to evaluate the validity of this technique. The conformity index (CI) and the dose volume histogram (DVH) were used as the plan comparison indices. A series of quality assurance (QA) was performed to guarantee the reliable treatment. The QA consisted of the film dosimetry for the verification of the dose distribution and the point measurements. The PBT plan always generated better results than the conventional 3D conformal plan. The PBT was proved to be useful for the H&N and thorax region.

• Journal of Microbiology and Biotechnology
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• 제26권11호
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• pp.1908-1917
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• 2016

Wild strain L-6 was subjected to combined mutagenesis, including UV irradiation, atmospheric and room temperature plasma, and ion beam implantation, to increase the yield of 1,3-dihydroxyacetone (DHA). With application of a high-throughput screening method, mutant Gluconobacter oxydans I-2-239 with a DHA productivity of 103.5 g/l in flask-shake fermentation was finally obtained with the starting glycerol concentration of 120 g/l, which was 115.7% higher than the wild strain. The cultivation time also decreased from 54 h to 36 h. Compared with the wild strain, a dramatic increase in enzyme activity was observed for the mutant strain, although the increase in biomass was limited. DNA and amino acid sequence alignment revealed 11 nucleotide substitutions and 10 amino acid substitutions between the sldAB of strains L-6 and I-2-239. Simulation of the 3-D structure and prediction of active site residues and PQQ binding site residues suggested that these mutations were mainly related to PQQ binding, which was speculated to be favorable for the catalyzing capacity of glycerol dehydrogenase. RT-qPCR assay indicated that the transcription levels of sldA and sldB in the mutant strain were respectively 4.8-fold and 5.4-fold higher than that in the wild strain, suggesting another possible reason for the increased DHA productivity of the mutant strain.

• Journal of electromagnetic engineering and science
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• 제18권2호
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• pp.117-128
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• 2018

In this paper, compact linear dual polarized series-fed $1{\times}2$ linear and $2{\times}2$ planar arrays antennas for airborne SAR applications are proposed. The proposed antenna design consists of a square radiating patch that is placed on top of the substrate, a quarter wave transformer and $50-{\Omega}$ matched transformer. Matching between a radiating patch and the $50-{\Omega}$ microstrip line is accomplished through a direct coupled-feed technique with the help of an impedance inverter (${\lambda}/4$ impedance transformer) placed at both horizontal and vertical planes, in the case of the $2{\times}2$ planar array. The overall size for the prototype-1 and prototype-2 fabricated antennas are $1.9305{\times}0.9652{\times}0.05106{{\lambda}_0}^3$ and $1.9305{\times}1.9305{\times}0.05106{{\lambda}_0}^3$, respectively. The fabricated structure has been tested, and the experimental results are similar to the simulated ones. The CST MWS simulated and vector network analyzer measured reflection coefficient ($S_{11}$) results were compared, and they indicate that the proposed antenna prototype-1 yields the impedance bandwidth >140 MHz (9.56-9.72 GHz) defined by $S_{11}$<-10 dB with 1.43%, and $S_{21}$<-25 dB in the case of prototype-2 (9.58-9.74 GHz, $S_{11}$< -10 dB) >140 MHz for all the individual ports. The surface currents and the E- and H-field distributions were studied for a better understanding of the polarization mechanism. The measured results of the proposed dual polarized antenna were in accordance with the simulated analysis and showed good performance of the S-parameters and radiation patterns (co-pol and cross-pol), gain, efficiency, front-to-back ratio, half-power beam width) at the resonant frequency. With these features and its compact size, the proposed antenna will be suitable for X-band airborne synthetic aperture radar applications.

• Advances in aircraft and spacecraft science
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• 제10권1호
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• pp.51-65
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• 2023

In this paper, the effect of deepness on in-plane free vibration behavior of a curved functionally graded (FG) nanobeam based on nonlocal elasticity theory has been investigated. Differential equations and boundary conditions have been developed based on Hamilton's principle. In order to figure out the size effect, nonlocal theory has been adopted. Properties of material vary in radial direction. By using Navier solution technique, the amount of natural frequencies has been obtained. Also, to take into account the deepness effect on vibrations, thickness to radius ratio has been considered. Differences percentage between results of cases in which deepness effect is included and excluded are obtained and influences of power-law exponent, nonlocal parameter and arc angle on these differences percentage are studied. Results show that arc angle and power law exponent parameters have the most influences on the amount of the differences percentage due to deepness effect. It has been observed that the inclusion of geometrical deep term and material distribution results in an increase in sensitivity of dimensionless natural frequency about variation of aforementioned parameters and a change in variation range of natural frequency. Finally, several numerical results of deep and shallow curved functionally graded nanobeams with different geometry dimensions are presented, which may serve as benchmark solutions for the future research in this field.

• 한국진공학회지
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• 제15권2호
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• pp.223-230
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• 2006

분자선 에피택시 (MBE)법으로 성장된 양자점 원적외선 수광소자(Quantum Dot Infrared Photodetector: QDIP)구조의 $In_{0.5}Ga_{0.5}As/GaAs$ 자발형성 양자점에 대하여, 수소화 처리(Hydrogen Plasma treatment) 전후의 각각의 특성을 광학적인 방법으로 분석하였다. 광학적 특성은 광루미네센스(photoluminescence: PL) 그리고 광전류(Photocurrent: PC)방법으로 각각 15K 300K 10K 130k 범위에서 측정되었으며, 수소화 처리 전후의 $In_{0.5}Ga_{0.5}As$ 자발형성 양자점의 광학적 특성을 비교 분석해보면, 원시료(as-grown)의 하나의 봉우리가 수소화 처리를 통하여 두개의 봉우리로 나뉘지만 PL의 전체 세기(intensity)에는 큰 변화가 없었으며, 광전류는 수소화 처리 후에 감소함을 알 수 있다. 수소화 처리 전후의 샘플에 대해 PL의 결과로부터 활성화 에너지를 계산하여 비교해보면, 수소화 처리 전후의 활성화 에너지가 다름을 알 수 있고, 이 변화된 활성화 에너지 값은 측정된 광전류의 봉우리에 해당하는 에너지 값과 거의 일치함을 알 수 있다. 수소화 처리된 샘플은 역 수소화 처리를 통하여 PL 그래프의 모양이 원시료의 모양으로 되돌아가야 함에도 불구하고, 수소화 처리된 시료의 PL의 그래프와 동일한 모습을 보였다. 이러한 현상은 자발형성 양자점의 수소화 처리에 따른 양자점 내부의 양자점 조성의 변동에 그 원인이 있는 것으로 보인다.

• 한국자기학회지
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• 제17권2호
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• pp.81-85
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• 2007

분자선 증착법을 이용하여 MnTe 박막을 Si(100):B 및 Si(111) 기판 위에 성장시켰다. 두개의 K-cell을 사용하여 기판온도 $400^{\circ}C$ 및 Te가 풍부한 조건에서 MnTe 합성이 잘 이루어졌다. 이 경우 증착속도는 $1.1 {\AA}/s$이었고 성장된 층의 두께는 $700{\AA}$ 정도이었다. 합성된 MnTe 박막들에 대하여 X선회절, 초전도 양자 간섭계, Physical Property Measurement System, 홀효과 측정 등을 사용하여 그 구조적, 자기적, 전기적 특성들을 조사하였다. X선회절 측정 결과 Si(100) : B및 Si(111)기판 위에 성장된 MnTe는 다결정성의 hexagonal 구조를 나타내었으며, 자기적, 전기적 특성 측정 결과 분말형태의 MnTe와 비교하여 매우 다른 특성을 나타내었다. Zero-field-cooling(ZFC) 및 field-cooling(FC) 조건에서 취해진 자화율 측정에서 다결정 박막은 21 K, 49K, 210K 근처에서 자기적 전이 현상을 보였으며, ZFC와 FC 자화율 사이의 큰 불가역성이 나타났다. MnTe박막의 5K와 300K에서의 자기이력곡선은 강자성 상태를 나타내었으며 잔류자화값과 보자력은 5 K에서 $M_R= 3.5emu/cm^3$와 $H_c=55Oe$를, 300 K에서 $M_R= 2.1emu/cm^3$와 $H_c=44Oe$로 나타났다. 전기수송 특성 측정 결과, 온도에 따른 비저항은 저온에서 Mott variable range hopping 전도특성을 나타내는 전형적인 반도체 성질을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• 한국ITS학회 논문지
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• 제18권6호
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• pp.233-240
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• 2019

본 논문에서는 최근 5G 통신기술의 발전으로 인해 LTE와 5G 대역을 모두 커버할 수 있는 안테나가 필요로 하고 있으며, 각 대역에서 공진 주파수 대비 10%이상의 대역폭을 만족하기 위해 통합공공망(LTE)과 5G 주파수 이중대역 커버용 단일 급전 안테나를 설계, 제작하였다. 기본형 다이폴 안테나의 방사소자를 평면형 구조를 채택하였으며, 설계된 안테나는 700 MHz 안테나의 경우 동축케이블 급전 및 balun을 형성시켜 설계되었으며, 3.5GHz의 경우는 700 MHz 방사소자 급전부로부터 각각 수직 연장 후 'ㄷ'자 모양으로 접은 형태로 balun이 필요 없고 700 MHz 대역의 방사소자가 3.5 GHz 대역 방사소자의 반사판 역할을 하도록 설계하였다. 이로써, 700MHz 대역 -10 dB 대역폭 104 MHz(14.8%)과 3.5GHz 대역 -10 dB 대역폭 660 MHz(18.8%)을 나타내었고, 방사패턴 특성으로 700 MHz대역에서는 이득 8.46 dBi, 빔폭 E-plane 55°, H-plane 81°와 3.5 GHz 대역에서는 이득 6.14 dBi, 빔폭 E-plane 79°, H-plane 49°를 각각 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.135-138
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• 2005

현재 널리 상용되어 있는PDP는 3전극 변방전형이다. 3전극 면장전형 PDP는 주방전이 유전체 아래에 서로 평행하게 위치하고 있는 ITO투명전극 사이에서 발생한다. 따라서 방전시의 전기장은 MgO 보호막 위에서 아치형태로 형성되게 된다. 플라스마 방전 시 전자에 의해 이온화된 이온 입자들은 전기장에 의해 그 방전경로가 정해지게 된다. 물론 전기장은 표면에서 수직이지만 전기장에 의해 가속되어진 이온입자들은 MgO 보호막에 기울어져서 입사하게 된다. 따라서 플라스마 방전시의 이온들의 MgO 보호막으로의 입사각은 매우 다양하다. $\gamma$-FIB (Focused ion beam) 시스템은 이온입사에 의한 물질의 이차전자방출계수 측정에 효과적인 장비이다. 본 실험은 이러한 $\gamma$-FIB 시스템을 이용하여 다양한 각도로 입사하는 이온빔에 의한 MgO 보호막의 이차전자방출계수를 측정하였다. 또한 이온화 에너지가 다른 여러 종류의 불활성 기체를 사용하여 이온의 입사하는 각도에 따른 MgO 보호막의 일함수를 측정하였다. 이온빔의 입사각은 각각 $0^{\circ}$, $10^{\circ}$, $20^{\circ}$, $30^{\circ}$로 변화시키면서 이차전자방출계수 및 일함수를 측정하였다. 이러한 실험을 통해 입사각이 클수록 이차전자방출계수는 증가하고 일수는 감소하는 것을 확인 할 수 있었다.

• 한국표면공학회지
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• 제29권6호
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.