• Title/Summary/Keyword: H-Si(100)

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Preparation and Characterization of Cu/MCM-41 Mesoporous Catalysts for NO Removal (Cu/MCM-41 메조포러스 촉매 제조 및 NO 제거 특성)

  • Park, Soo-Jin;Cho, Mi-Hwa;Kim, Seok;Kwon, Soo-Han
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.737-741
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    • 2005
  • In this study, the effect of copper content on the NO removal efficiency by Cu/MCM-41 has been investigated. MCM-41 was prepared by hydrothermal synthesis using a gel mixture of colloidal silica solution and cetyltrimethylammonium. Cu/MCM-41 was manufactured with copper content (5, 10, 20, and 40%) in Cu(II) acetylacetonate. The surface properties of MCM-41 were investigated by using pH, XRD, and FT-IR analyses. $N_2/77K$ adsorption isotherm characteristics, including the specific surface area and micropore volume were studied by BET's equation and Boer's t-plot methods. NO removal efficiency was confirmed by gas chromatography technique. From the experimental results, the MCM-41 was analyzed to have the surface functional groups of Si-OH and Si-O-Si and the characteristic diffraction lines (100), (110), (200), and (210) corresponding to a hexagonal arrangement structure. The copper content supported on MCM-41 appeared to increase the NO removal efficiency in spite of decreasing the specific surface areas or micropore volumes. Consequently, it was found that the copper content in Cu/MCM-41 played an important role in improving the NO removal efficiency, which was mainly attributed to the catalytic reactions.

A Study on the Preparation of SiC Nano powder from the Si Waste of Solar Cell Industry (태양전지 산업(産業)에서 배출(排出)되는 Si waste로부터 SiC 분말 제조에 관한 연구(硏究))

  • Jang, Eun-Jin;Kim, Young-Hee;Lee, Yoon-Joo;Kim, Soo-Ryong;Kwon, Woo-Teck
    • Resources Recycling
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    • v.19 no.5
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    • pp.44-49
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    • 2010
  • SiC powders have been recovered from silicon-containing waste slurry by carbothermal reduction method with carbon black. Large amount of silicon-containing waste slurry is generated from Solar Cell industry. In an environmental and economic point of view, retrieve of the valuable natural resource from the silicon waste is important. In this study, SiC powder recovered by the reaction ball-milled silicon powder from waste and carbon black at $1350^{\circ}C$ for 3h under vacuum condition. Physical properties of samples have been characterized using SEM, XRD, Particle size analyzer and FT-IR spectroscopy.

Evaluation of Neutralizing Capacities of Antacid Products (제산제의 중화 능력의 평가 연구)

  • 박경호;차수만;최진석;김낙두
    • YAKHAK HOEJI
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    • v.27 no.2
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    • pp.139-148
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    • 1983
  • The neutralizing capacities of the antacids, which are frequently used in Korean market, were evaluated in vitro by the methods of Resset and Rice, Fordtran and Collyns, and modified Beekman, respectively. The antacids used in the study are two kinds, the one is preparations from Seoul National University Hospital and the other is products from pharmaceutical companies, and their components are aluminum phosphate, aluminum hydroxide, magnesium aluminum hydroxide, magnesium hydroxide, basic aluminum sucrose sulfate and $2MgO{\times}Al_{2}O_{3}{\times}SiO_{3}$, etc. The hospital preparations, DMC and MAC powders, showed most powerful and sustained neutralizing capacities, i.e. they maintained the pH range from 5 to 8 for 60min, Whereas pharmaceutical products, aluminum hydroxide gel containing magnesium hydroxide and magnesium aluminum hydroxide gel exhibited a moderate capacities, i.e pH ranged from 3 to 6, and aluminum phosphate, $2MgO{\times}Al_{2}O_{3}{\times}SiO_{2}$ and basic aluminum sucrose sulfate displayed a weak activity, pH ranged from 2 to 3. When the therapeutic doses of aluminum hydroxide gel containing magnesium hydroxide and magnesium aluminum hydroxide gel were divided into 2 doses and each dose was used at the interval of 30min., the divided doses kept more prolonged higher pH than the single therapeutic dose. Milliequivalents of neutralizing capacities of each antacid were measured by the method of Fordtran and Collyns. The milliequivalents per 1ml of aluminum hydroxide gel, aluminum hydroxide gel containing magnesium hydroxide, magnesium aluminum hydroxide gel and aluminum phosphate were 2.87, 2.86, 2.57, and 0.67, respectively. The milliequivalents per 100mg of preparations, i.e. MAC powder, dried aluminum hydroxidgel, DMC powder, 2MgO, $Al_{2}O_{3}$. $SiO_{2}$, magnesium aluminum hydroxide and basic aluminum sucrose sulfate were 1.91, 1.68 1.63, 1.45, 1.44, and 0.44, respectively.

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Production and Characterization of Extracellular Phospholipase D from Streptomyces sp. YU100

  • Lim, Si-Kyu;Choi, Jae-Woong;Chung, Min-Ho;Lee, Eun-Tae;Khang, Yong-Ho;Kim, Sang-Dal;Nam, Doo-Hyun
    • Journal of Microbiology and Biotechnology
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    • v.12 no.2
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    • pp.189-195
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    • 2002
  • Using Streptomyces sp. YU100 isolated from Korean soil, the fermentative production of phospholipase D was attempted along with its purification and characterization studies. When different carbon and nitrogen sources were supplemented in the culture medium, glucose and yeast extract were found to be the best. By varying the concentration of nutrients and calcium carbonate, the optimal culture medium was determined as 2.0% glucose, 1.5% yeast extract, 0.5% tryptone 0.3% calcium carbonate. During cultivation, the strain secreted most of the phospholipase D in the early stage of growth within 24 h. The phospholipase D produced in the culture broth exhibited hydrolytic activity as well as transphosphatidylation activity on lecithin (phosphatidylcholine). In particular, the culture broth showed 8.7 units/ml of hydrolytic activity when cultivated at $28^{\circ}C$ for 1.5 days. The phospholipase D was purified using 80% ammonium sulfate precipitation and DEAE-Sepharose CL-6B column chromatography, which produced a major band of 57 kDa on a 10% SDS-polyacrylamide gel with purity higher than 80%. The enzyme showed an optimal pH of 7 in hydrolytic reaction, and at pH 4 in a transphosphatidylation reaction. The enzyme activity increased until the reaction temperature was elevated to $60^{\circ}C$. The enzyme was relatively stable at high temperatures and neutral pH, but significantly unstable in the alkaline range. Among the detergents tested as emulsifiers of phospholipids, the highest enzyme activity was observed when 1.5% Triton X-100 was employed. However, no inhibitory effect by metal ions was detected. Under optimized reaction conditions, the purified enzyme not only completely decomposed PC to phosphatidic acid within 1 h, but also exhibited higher than 80% conversion rate of PC to PS by transphosphatidylation within 4 h.

Synthesis of Zeolite A from Coal Fly Ash (석탄회로부터 제올라이트 A의 합성)

  • Jee, Jeong-Dae;Choi, Ko-Yeol
    • Applied Chemistry for Engineering
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    • v.22 no.2
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    • pp.214-218
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    • 2011
  • Zeolite A was synthesized from coal fly ash by the microwave heating as well as the conventional heating method. The effects of reaction time, the amount of sodium aluminate, and the reaction temperature on the crystallization of zeolite A were investigated. The optimum crystallization time was about 3 to 6 h in the temperature range of $80{\sim}100^{\circ}C$. The amount of sodium aluminate was found to be optimum when the molar ratio $SiO_2/Al_2O_3$ of starting solution was in the range of 0.44 to 1.05 at above $90^{\circ}C$, However, The more amount of sodium aluminate was required to get zeolite A at $80^{\circ}C$. Although the rate of crystallization was slightly faster in the microwave heating than that in the conventional heating, the reaction time need to obtain fully crystallized zeolite A was similar in both methods. Therefore, the influence of the microwave heating was not so large compared with the conventional heating in the synthesis of zeolite A from coal fly ash.

CHARACTERISTICS OF HETEROEPITAXIALLY GROWN $Y_2$O$_3$ FILMS BY r-ICB FOR VLSI

  • Choi, S.C.;Cho, M.H.;Whangbo, S.W.;Kim, M.S.;Whang, C.N.;Kang, S.B.;Lee, S.I.;Lee, M.Y.
    • Journal of Surface Science and Engineering
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    • v.29 no.6
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    • pp.809-815
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    • 1996
  • $Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

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$TiO_2$ Thin Film Patterning on Modified Silicon Surfaces by MOCVD and Microcontact Printing Method

  • 강병창;이종현;정덕영;이순보;부진효
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.77-77
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    • 2000
  • Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

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Isolation of Streptomyces sp. YU100 Producing Extracellular Phospholipase D

  • Lim, Si-Kyu;Choi, Jae-Woong;Lee, Eun-Tag;Khang, Yong-Ho;Kim, Sang-Dal
    • Journal of Microbiology and Biotechnology
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    • v.12 no.1
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    • pp.71-76
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    • 2002
  • Soil samples were screened for actinomycete strains capable of producing phospholipase D, and a strain, Streptomyces sp. YU100, showing a high transphosphatidylation activity was isolated. This strain secreted phospholipase D in a culture broth after 12 h of cultivation, and its productivity continued to increase for 36 h of fermentation. In addition, its transphosphatidylation rate of phosphatidylcholine to phosphatidylserine was almost $68\%$ within 1 h. The morphological and chemotaxonomical characteristics showed that this strain could be classified as a number of the Streptomycetaceae family, particularly due to the spiral form of its spore chain consisting of 60-70 smooth spores $(0.75{\times}1.0{\mu}m$) on an aerial mycelium, FA-2c type of fatty acid profile in the cell wall, and LL-DAP component in the cell wall peptidoglycan. A phylogenetic analysis of the 16S rDNA provided a clue that the strain YU100 was actually a member of the genus Streptomyces, because the determined sequence exhibited a higher homology with Streptomyes sp. ASB27, S. peucetius JCM9920, and S. griseus ATCC10137. A dendrogram based on the 16S rDNA sequences also showed a phylogenetic relationship between the strain YU100 and these strains. However, the strain YU100 has not yet been assigned to a particular species, because of absence of any other classified species with a high matching score.

Sliding wear behavior of electro-pressure sintered cobalt (통전 가압 소결된 Co 소결체의 마멸 거동)

  • Kang S. H.;Kim T.-W.;Kim Y.-S.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2004.10a
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    • pp.218-221
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    • 2004
  • Dry sliding wear behavior of electro-pressure sintered Co, $Co-20\;wt.\%$ CuSn and $Co-20\;wt.\%$ WC composites were investigated. Wear tests of the materials were carried out using a pin-on-disk wear tester at various loads of 10N-100N under a constant sliding speed condition of 0.38m/s against glass ($83\%\;SiO_2$) beads. Sliding distances were varied with a range of $100m{\sim}600m$. A scanning electron microscopy was used to examine morphologies of worn surfaces, cross-sections, and wear debris. The $Co-20\;wt.\%$ WC composite had the highest and the $Co-20\;wt.\%$ CuSn composite showed the lowest wear resistance among the tested materials. All specimens exhibited low friction coefficients ranging from 0.12 to 0.4 at the applied load of 100N.

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Heat treating effect on the magnetic properties of high Silicon Iron by control of surface energy (표면에너지를 이용한 고규소철 합금의 자기적 특성에 미치는 열처리의 영향)

  • Koo, J.M.;Lee, K.H.
    • Journal of the Korean Society for Heat Treatment
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    • v.9 no.1
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    • pp.45-52
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    • 1996
  • Different crystallographic planes, at a gas-metal interface, have different surface energy. To grow the (100) grains of 6.5wt%Si-Fe alloy preferentially, it was heat-treated in the atmosphere of sulfur by using the surface energy. When the specimen is heat-treated for 1 hour at $1175^{\circ}C$ by using the atmosphere of sulfur produced by heating at $75^{\circ}C$, (100) grains were grown to 3.5mm. Owing to the growth of (100) grains, the coercive force was decreased to 2.1 A/mm, and the magnetic induction at 800(A/mm) was increased to 1.61T.

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