• Title/Summary/Keyword: H-Si(100)

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Changes of Low Cycle Fatigue Behavior of AI-Mg-Si Alloy with Severe Plastic Deformation and Heat Treatment (강소성 가공 및 열처리에 의한 Al-Mg-Si합금의 저주기 피로특성변화)

  • Kim, W.H.;Kwun, S.I.
    • Journal of the Korean Society for Heat Treatment
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    • v.22 no.4
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    • pp.217-222
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    • 2009
  • The effects of severe plastic deformation by equal channel angular pressing (ECAP) and subsequent heat treatment on the low cycle fatigue behaviors of Al-Mg-Si alloy were investigated. The specimens which were peak aged at $175^{\circ}C$ after solution treatment showed cyclic hardening at all strain amplitudes, while the specimens ECAPed after solution treatment showed cyclic softening at all strain amplitudes during fatigue. The specimens aged at $100^{\circ}C$ after ECAP showed slight cyclic hardening. Various changes of cyclic fatigue behavior after severe plastic deformation and/or heat treatment were discussed in terms of the microstructural changes and precipitation conditions.

Ultra Thin Film Barrier Layer for Plastic OLED

  • Kopark, Sang-Hee;Oh, Ji-Young;Hwang, Chi-Sun;Yang, Yong-Suk;Chu, Hye-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.44-47
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    • 2004
  • Fabrication of barrier layer on PES substrate and plastic OLED device by atomic layer deposition are carried out. Simultaneous deposition of 30nm of $AlO_x$ film on both sides of PES gives film MOCON value of 0.0615g/$m^2$.day (@38$^{\circ}C$, 100% R.H). Introduction of conformal $AlO_x$ film by ALD resulted in enhanced barrier properties for inorganic double layered film including PECVO $SiN_x$. Preliminary life time to 91% of initial luminance (1300 cd/$m^2$ ) for 100nm of PECVD $SiN_x$/30nm of ALD $AlO_x$ coated plastic OLED device was 260 hours.

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Study of SiO2 Thin Film Patterning by Low Energy Electron Beam Lithography Using Microcolumns (저 에너지 초소형 전자칼럼 리소그래피를 이용한 SiO2 박막의 Pattern 제작에 관한 연구)

  • Yoshimoto, T.;Kim, H.S.;Kim, D.W.;Ahn, S.
    • Journal of the Korean Magnetics Society
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    • v.17 no.4
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    • pp.178-181
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    • 2007
  • Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.

Magnetic Properties of Amorphous FeCrSiBC Alloy Powder Cores Using Phosphate-coated Powders

  • Jang, Dae-Ho;Kim, Kwang-Youn;Noh, Tae-Hwan
    • Journal of Magnetics
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    • v.11 no.3
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    • pp.126-129
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    • 2006
  • The phosphate coating on the $(Fe_{0.97}Cr_{0.03})_{76}(Si_{0.5}B_{0.5})_{22}C_2$ amorphous powders with an average size of 10 ${\mu}m$ in diameter has been carried out in aqueous 1.0-2.0 wt% $H_3PO_4$ solutions, and the consolidation behavior and magnetic properties of their compressed powder cores has been investigated. The phosphate coating could provide efficient electrical insulation between amorphous powders and improved consolidation ability at room temperature. Especially when the powders were treated in more concentrated phosphoric acid solution, enhanced phosphate covering and higher frequency/dc-bias stability were achieved. The powder cores phosphate-coated in 2.0 wt% $H_3PO_4$ solution exhibited constant permeability of 21 up to 10 MHz, 110 of the quality factor at 0.9 MHz, 610 mW/cm3 core loss at 100 kHz/0.1 T and 89 of percent permeability at 100 kHz.

Nano Force Metrology and Standards (나노 힘 측정 및 표준)

  • Kim M.S.;Park Y.K.;Choi J.H.;Kim J.H.;Kang D.I.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.59-62
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    • 2005
  • Small force measurements ranging from 1 pN to $100{\mu}N$, we call it Nano Force, become the questions of common interests of biomechanics, nanomechanics, material researches, and so on. However, unfortunately, quantitative and accurate force measurements have not been taken so far. This is because there ,are no traceable force standards and a calibration scheme. This paper introduces a quantitative force metrology, which provides traceable link to SI (International Systems of Units). We realize SI traceable force ranging from 1 nN to $100{\mu}N$ using an electrostatic balance and disseminate it through transfer standards, which are self-sensing cantilevers that have integrated piezoresistive strain gages. We have been built a prototype electrostatic balance and Nano Force Calibrator (NFC), which is an AFM cantilever calibration system. As a first experiment, we calibrated normal spring constants of commercial AFM cantilevers using NFC. Calibration results show that the spring constants of them are quite differ from each other and nominal values provided by a manufacturer (up to 240% deviation).

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Fabrication and Optical Property of ZnO/SiO2 Branch Hierarchical Nanostructures (ZnO/SiO2 가지형 나노계층구조의 제작 및 광학적 특성 연구)

  • Ko, Y.H.;Kim, M.S.;Yu, J.S.
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.381-386
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    • 2011
  • We fabricated the ZnO (zinc oxide)/$SiO_2$ (silicon dioxide) branch hierarchical nanostructures by the e-beam evaporation of $SiO_2$ onto the surface of the electrochemically grown ZnO nanorods on Si substrate, which leads to the self-assembled $SiO_2$ nanorods by oblique angle deposition between vapor flux and vertically aligned ZnO nanorods. In order to investigate the effects of $SiO_2$ deposition on the morphology and optical property of ZnO/$SiO_2$ branch hierarchical nanostructures, the evaporation time of $SiO_2$ was varied under a fixed deposition rate of 0.5 nm/s. The vertically aligned ZnO nanorods on Si substrate exhibited a low reflectance of <10% in the wavelength range of 300~535 nm. For ZnO/$SiO_2$ branch hierarchical nanostructures at 100 s of evaporation time of $SiO_2$, the more improved antireflective property was achieved. From these results, ZnO/$SiO_2$ branch hierarchical nanostructures are very promising for optoelectronic and photovoltaic device applications.

Preparation of TiO2-SiO2 Powder by Modified Sol-Gel Method and their Photocatalytic Activities (수식 졸-겔법에 의한 TiO2-SiO2분체합성 및 광촉매활성)

  • Kim, Byung-Kwan;Mizuno, Noritaka;Yasui, Itaru
    • Applied Chemistry for Engineering
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    • v.7 no.6
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    • pp.1034-1042
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    • 1996
  • Various $TiO_2-SiO_2$ composite powders were prepared by the modified sol-gel method using 1-dodecanol as DCCA (Dryng Control Chemical Additive ). Their characterizations were carried out and their photocatalytic catalysis was examined on the evolution reaction of hydrogen. The weight losses at $500^{\circ}C$ of only $TiO_2$ and $SiO_2$ powders were 33. 0wt% and 42.5wt%, respectively, and those of the $TiO_2/SiO_2$ powders ($TiO_2/SiO_2=25/75$, 50/50 and 75/25) were about $70.0{\pm}3.0wt%$. The released substances from the powders were almost organic matters. The as-prepared powders except only $TiO_2$ powder were amorphous. Transformation of anatase to rutil was hindered by $SiO_2$ component and the crystallinity of anatase was decreased with increasing $SiO_2$ contents. The as-prepared powders were bulky states. By heating at $600^{\circ}C$ for 1 hr $TiO_2-SiO_2$ powders ($TiO_2=100%$, $TiO_2/SiO_2=75/25,\;50/50$) showed agglomerates consisted of particles in submicron, but those of $TiO_2/SiO_2=25/75$ and $SiO_2=100%$ were still bulky states. Specific surface area of the powders heat-treated at $600^{\circ}C$ for 1hr was increased with $SiO_2$ concents and their pore sizes were also depended on $SiO_2$ contents. The photocatalytic activity of $TiO_2/SiO_2=75/25$ heat-treated at $600^{\circ}C$ for 1hr was 0.240mo1/h.g-cat as $H_2$ evolution rate. This value was about 2.0 times that of P-25(Degussa P-25) as a standard photocatalyst.

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The Effect of Particle Size and Compaction Pressure on the Thermoelectric Properties of n-type FeSi2 (N형 FeSi2의 열전특성에 미치는 입자크기 및 성형압력의 영향)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.7
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    • pp.4835-4841
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    • 2015
  • The effect of particle size and compaction pressure on the thermoelectric properties of n-type $FeSi_2$ was investigated. The starting powders with various particle size were pressed into a compact (compaction pressure; $70{\sim}220kg/cm^2$). The compact specimens were sintered at 1473 K for 7 h and annealed at 1103 K for 100 h under Ar atmosphere to transform to the semiconducting ${\beta}$-phase. The microstructure and phases of the specimens were observed by SEM, XRD and EDS. The electrical conductivity and Seebeck coefficient were measured simultaneously for the same specimen at r.t.~1023 K in Ar atmosphere. The electrical conductivity increased with decreasing particle size and hence the increases of relative density of the sintered body and the amount of residual metallic phase ${\varepsilon}$-FeSi due to a increase of the electrical conductivity. The Seebeck coefficient exhibited the maximum value at about 700~800 K and decreased with decreasing particle size. This must be due to a increase of residual metallic phase ${\varepsilon}$-FeSi. On the other hand, the change of compaction pressure appeared to have little effect on the thermoelectric properties. Consequently, the power factor would be affected more by particle size than compaction pressure.

Thermoluminescent Response of Thin LiF:Mg,Cu,Na,Si Detectors to Beta Radiation (얇은 LiF:Mg,Cu,Na,Si 검출기의 베타선장에 대한 TL 반응)

  • Nam, Y.M.;Kim, J.L.;Chang, S.Y.;Cho, H.W.;Kim, H.J.
    • Journal of Radiation Protection and Research
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    • v.24 no.1
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    • pp.39-43
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    • 1999
  • Thermoluminescent (TL) response characteristics of a thin LiF:Mg,Cu,Na,Si Teflon detectors have been studied for use in beta radiation detection. The detectors were fabricated from a mixture of LiF:Mg,Cu,Na,Si phosphor and Teflon powder which was molded into a thin disk form of $50mg/cm^2$ thickness. These detectors were irradiated to beta fields of $^{147}Pm,\;^{204}Tl\;and\;^{90}Sr/^{90}Y$ sources with a covering of Kapton foil ($2mg/cm^2$) and photon irradiation was carried out with a $^{137}Cs$ source at the Korea Atomic Energy Research Institute (KAERI). Batch uniformity was estimated to be 4.7% and the beta dose response presented linear relationship from 0.1 mGy to 100 Gy. The beta energy responses of thin detectors normalized to $^{137}Cs$ were presented as 0.46, 1.09 and 1.06 for $^{147}Pm,\;^{204}Tl\;and\;^{90}Sr/^{90}Y$ beta rays, respectively. The evaluated values for angular responses were $0.93{\pm}0.03\;(^{147}Pm),\;0.94{\pm}0.04\;(^{204}Tl),\;and\;0.92{\pm}0.05\;(^{90}Sr/^{90}Y)$. The results satisfied well a proposed ISO Standard for beta ray dosimeters.

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Flexible electronic-paper active-matrix displays

  • Huitema, H.E.A.;Gelinck, G.H.;Lieshout, P.J.G. Van;Veenendaal, E. Van;Touwslager, F.J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.141-144
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    • 2004
  • A QVGA active-matrix backplane is produced on a 25${\mu}m$ thin plastic substrate. A 4-mask photolithographic process is used. The insulator layer and the semiconductor layer are organic material processed from solution. This backplane is combined with the electrophoretic display effect supplied by SiPix and E ink, resulting in an electronic paper display with a thickness of only 100${\mu}m$. This is world's thinnest active-matrix display ever made.

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