• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.747-750
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• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Journal of electromagnetic engineering and science
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• v.8 no.1
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• pp.28-33
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• 2008

We have proposed a novel DVB-H(Digital Video Broadcast for Handheld) antenna for folder-type mobile handheld terminal by using a coupling element, a stub, and an L-type matching circuit. The L-type matching circuit consisting of two chip inductors is used for achieving an improved impedance matching over the DVB-H frequency band ($470{\sim}702\;MHz$). Simulated results showed the stub worked to more knot the lower and upper frequency ends of the input impedance curve. The antenna exhibits a flat gain characteristic from 2 to 2.8 dBi over the DVB-H frequency band. The radiation patterns are a stable Figure-of-eight radiation pattern in the frequency range.

• Applied Chemistry for Engineering
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• v.10 no.6
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• pp.828-831
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• 1999

5,15-Bis(mesityl)-10,20-bis(4-amino)porphyrin was synthesized with meso-(mesityl)dipyrromethane and 4-nitrobenzaldehyde. It was characterized with $^1H$-NMR spectroscopy, UV spectrophotometer, and GC-MASS. In UV spectrum, Soret-band(438 nm) and Q-bands(526, 572, 611 nm) were confirmed. In NMR spectrum, the characteristic peak of porphyrin was detected at -2.65 ppm. Copolyimide containing porphyrin structure was synthesized with mesityl-$TPP(NH_2)$, 3,3',4,4'-benzophenonetetracarboxylic dianhydride(BTDA) and 2,2-bis(4-(4-aminophenoxy)phenyl) hexafluoropropane(BAPHF) and characterized with UV and FT-IR spectrophotometer. The $T_g$ and $T_m$ of the synthesized copolyimide were 220.7 and $369.2^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Korean Journal of Materials Research
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• v.12 no.7
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• pp.587-590
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• 2002

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

• Korean Journal of Food Science and Technology
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• v.10 no.4
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• pp.415-422
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• 1978

Some minor Korean beans including red bean, mung bean and kidney bean were subjected to proximate analysis, fractionation by the solubility method and polyacrylamide gel disc electrophoresis of proteins to obtain the following results. 1) Proximate composition of the beans showed that fat content was less than 1%, carbohydrate was about 60% and protein content was in the range of $20{\sim}25%$. 2) Total globulin content of the proteins was $46{\sim}59%$, a little lower than in soybean, in the order of mung bean> kidney bean> red bean. Albumin content was comparable in kidney bean, and lower in red bean and mung bean as compared with that in soybean. Glutelin content was relatively higher, being in the range of $10{\sim}19%$ and in the order of red bean> mung bean> kidney bean. 3) According to the electrophoretic pattern, total protein fractions extracted with pH 7.6 buffer from red bean, mung bean and kidney bean showed 9.12 and 11 bands, respectively, whereas those extracted with pH 4.8 buffer showed 13, 13 and 12 bands, respectively. Water extracts of red bean, mung bean and kidney bean showed 10, 8 and 9 bands, respectively, while albumin fractions showed 8, 9 and 7 bands and globulin fractions, 4 bands in all of three beans. The band having a Rm value of $0.5{\sim}0.7$ in the globulin fraction from three beans was not observed in the water extract and appears to be specific to water insoluble globulin.

• The Bulletin of The Korean Astronomical Society
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• v.36 no.2
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• pp.150.2-150.2
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• 2011

Volume Phase Holographic (VPH) gratings are getting more popular as dispersion elements in spectrographs. High efficiency, compact configuration, and easy handling are driving many visual spectrographs to use VPH gratings for their main dispersers or for their cross-dispersers in higher resolution spectrographs. More recently, VPH gratings are being adopted in near-infrared by some spectrographs and by a number of next generation instrument projects. IGRINS (Immersion Grating Infrared Spectrograph) uses a VPH grating as a cross-disperser in each H or K band arm. J or H band performance of VPH gratings has been proven by other instruments. But K-band VPH gratings are new to the field. In this presentation, we are going to present test results we have got so far for verification of H-band VPH gratings and development of K-band VPH gratings.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.42 no.2
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• pp.129-133
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• 1997

A total 943 accession of soybeans (G. max) and 50 wild soybeans (G. soja) were examined for leucine aminopeptidase (LAP) isozyme variation by 5％ polyacrylamide gel electrophoresis(PAGE) and isoelectric focusing(IEF) of pH 4~6.5. The Lap1*b by PAGE was the most common phenotype in both G. max and G. soja. The frequency of Lap1*b allele was observed to be higher in G. max(1.00) than in G. soja(0.96) of Korea. This result shows that G. max is fixed for Lapl*b allele at the Lap1 locus. LAP isozyme band type I and II were found using IEF of pH 4~6.5 in G. max and G. soja of Korea. Type I was observed from 92.8％ in G. max and 92.0％ in G. soja, and type II was discovered in 7.2％ G. max and 8.0％ G. soja. This result suggested the possibility to be found more various band types.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.7 no.3
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• pp.56-61
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• 2008

Recently, although demands for an internal antenna applicable to DVB-H handhold terminals are increased, there are many difficulties in designing the antenna due to the long wavelength of $430{\sim}640mm$ and the wide bandwidth of $470MHz{\sim}702MHz$. Since the proposed DVB-H band antenna can be analyzed as an SDA (Supported structure Defined Antenna), it is designed by combination of the folded monopole radiator which has a wideband characteristics and the wing-type element which can reduce the resonant frequency effectively. The DVB-H band antenna has VSWR of 4 and obtains a good gain from -5 to 2 dBi, when it is built-in the mobile handset.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.797-802
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• 1996

Hydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited on unheated substrates by low frequency (50Hz) plasma using $SiH_4+CH_4+H_2$ gas mixtures. Deposition rate, refractive index, optical band gap, Vickers hardness and IR spectrum of the deposited a -SiC:H films have been measured for various rations of gas flow rates k(=$CH_4/SiH_4$, 0.5k4) with a constant $H_2$ flow rate (100sccm). As k increases, the deposition rate of the a-SiC:H films increases up to the maximum value of about 220nm/h at k=2.5, and then it decreases. The refractive index of the films was 2.6 for k=2.5, while the optical band gap of the films was 3.3eV for k=2.2. The maximum value of Vickers hardness of the films was 1500Hv at k=1. The infrared transmission measurement shows that the films contain both Si-C and Si-$CH_3$ bonds.