• Pediatric Gastroenterology, Hepatology & Nutrition
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• v.6 no.1
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• pp.1-9
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• 2003

Purpose: To investigate the relation of the gastric epithelial cell proliferation, apoptosis and genotypes of H. pylori in children. Methods: Histologic grading by updated Sydney system, PCNA immunostaining, TUNEL method and the genotypes (cagA, picB and iceA) by PCR were performed in H. pylori positive (N=20) and negative (N=20) gastric biopsy specimens. Results: PCNA index was significantly different between H. pylori positive children ($77.4{\pm}13.12$) and H. pylori negative children ($52.3{\pm}12.20$) (p=0.000). There were positive correlations between PCNA index and H. pylori density (r=0.624, p=0.000), polymorphonuclear neutrophil activity (r=0.460, p=0.005) and chronic inflammation (r=0.433, p=0.009). Apoptosis index of H. pylori positive children ($0.70{\pm}0.411$) was significantly higher than of H. pylori negative children ($0.14{\pm}0.201$) (p=0.000). Positive correlations between apoptosis index and H. pylori density (r=0.691, p=0.000), polymorphonuclear neutrophil activity (r=0.585, p=0.000) and chronic inflammation (r=0.535, p=0.001) were noted. As PCNA index increased, apoptosis index significantly increased (r=0.527, p=0.001). The positive rates of genotypes were cagA 90%, picB 75%, iceA1 60% and iceA2 15%, respectively. There were no significant correlations between the status of the genotypes and PCNA index, apoptosis index, the endoscopic findings and the histologic findings. Conclusion: PCNA index and apoptosis index in H. pylori positive children were higher than in H. pylori negative children but were not related to H. pylori genotypes. This study suggested that correlatively increased gastric epithelial cell proliferation and apoptosis are important to pathogenesis of H. pylori infection in children.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.745-748
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• 2007

Hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were fabricated on a flexible metal substrate at $150\;^{\circ}C$. To increase the stability of the flexible a-Si:H TFTs, they were thermally annealed at $230\;^{\circ}C$. The field effect mobility was reduced because of the strain in a- Si:H TFT under thermal annealing.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.193-197
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• 1997

Theoretical studies on the base-catalyzed deprotonation of 4-phenacylpyridinium cations, R1-CO-CH2-C5H4N-R2, I (R1=YC6H4 -and R2=CH3), and II (R1=C6H5 and R2=CH2C6H4Y) have been carried out with bases, NH3 and XC6H4NH2 using AM1 MO method. The Brψnsted α values are 0.20 and 0.22 and the βB values are 0.62 and 0.61, respectively for cations I and II. The negative Ⅰ (=α-βB) values obtained are in accord with the experimental results in aqueous solution, although the theoretical gas-phase α values for I are somewhat smaller than the experimental values in water due to neglect of solvation effect. It has been stressed that the Brψnsted α is distorted not only by the lag in the resonance and solvation development in the carbanion, but also by the difference in the distance between the anionic center and substituents in the TS and in the product anion.

• Journal of the Korean Wood Science and Technology
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• v.8 no.1
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• pp.22-27
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• 1980

Quantitative assessment of edge blunting of saw-teeth was carried out by TALYSURF. 1. Using the following equation, the real shape of a saw-tooth can be traced on the graph of TALYSURF. ${\frac{{\Delta}h}{h}}={\frac{V{\Delta}_x}{V_x}}$ {${\Delta}h$: vertical distance of stylus h: vertical distance in chart $V{\Delta}_x$: Velocity of stylus $V_x$: velocity of chart} 2. As shown on Fig 2, the error from stylus itself can be calculated by following equation. i) 13.8${\mu}{\leqq}$x<20.4${\mu}$ y=-0.2246x+4.59${\mu}$ ii) 0${\leqq}$x<13.8${\mu}$ y=${\sqrt{(-18{\mu})^2-x^2}}-1.42x+32.7{\mu}}$ 3. The relationship between profile of saw-tooth and error from stylus itself can be calculated by following equation. $E(%)=\frac{f(r){\times}{\frac{4}{18{\mu}}}}{f(R){\times}{\frac{R}{18.5{\mu}}}-f(r){\times}{\frac{r}{18{\mu}}}}{\times}100$ {E(%)${\frac{error\;of\;stylus}{dullness\;of\;saw\;tooth}}{\times}100$ r: radius of stylus tip R: radius of tip which is drawn in graph of talysurf f(r) : error of stylus f(R) : dullness of tip which is drawn in graph of talysurf} 4. The graph of maximum error and profile of saw-tooth was parabola.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.21-22
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• 2008

• Journal of the Society of Cosmetic Scientists of Korea
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• v.29 no.1
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• pp.185-193
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• 2003

• Polymer(Korea)
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• v.29 no.6
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• pp.593-598
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• 2005

This work studied the loading capabilities and release behaviors of poly(ethylene-alt-maleic anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) multilayer films formed by the layer-by-layer(LbL) sequential self-assembly method, using Rodamine 6G(R6G) as an indicator. Thickness of the multilayer, and loading and subsequent release behavior of R6G from the multilayer were studied using UV-visible spectroscopy. The amount of R6G loaded in multilayer film increased linearly with increasing film thickness. pH-Sensitive permeability was observed, where lower pH environments increased both release rate and release amount. By additional assembling of PEMAh/poly(ethyleneimine) (PEI) capping layers on top of (PEMAh/P4VP)n multilayers, the release of R6G was better controlled.

• The Korean Journal of Malacology
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• v.12 no.2
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• pp.91-97
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• 1996

바윗굴의 산란유발 및 종묘생산을 위한 생물학적 기초자료를 얻고자 자극방법별 효과와 난발생 및 유생사육에 미치는 수온의 영향에 관하여 실험한 결과, 자극방법별 산란유발은 정자현탁액 첨가구에서 가장 많은 산란량과 높은 수정률을 나타냈고, 난발생 및 유생사육의 각 단계에 이르기까지의 수온(T, $^{\circ}C$)에 따른 발생속도(h, 시간)는 수온이 높을 수록 빨랐으며, 그 관계식은 다음과 같다. 담륜자기 :1/h= 0.0069T - 0.0950(r=0.9447)D형 유생 :1/h= 0.0006T - 0.0045(r=0.9288)초기 각정기 유생:1/h= 0.0002T - 0.0019(r=0.9358)후기 각정기 유생:1/h= 0.0002T - 0.0022(r=0.9868)부착기 유생:1/h= 0.0001T - 0.0013(r=0.9897)또한 바윗굴의 수온과 난발생 속도와의 관계에서 추정된 난발생의 생물학적 영도는 평균 10.96$^{\circ}C$였으며, 수온별 유생사육시 바윗굴의 생존율은 24$^{\circ}C$에서 6.8%로 가장 좋았다.

• Computational Structural Engineering
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• v.6 no.3
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• pp.125-137
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• 1993

Recently, many researches are being dealt with the adaptive method for improving the accuracy of finite element solution. This paper deals with rh-methods that are the combination of r and h-method ; r-method is to relocate the nodes for the grid optimization, h-method is to divide the elements with great error into the equal shape. As a results, rh-method has the same error decrease and convergence as h-method in the same degree of freedom, but it has more exact result of finite element in the state of restraining degrees of freedom than h-method alone.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.