• Transactions of the Korean hydrogen and new energy society
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• v.18 no.2
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• pp.124-131
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• 2007

Methane is partially oxidized to produce the syngas by the lattice oxygen of metal oxides in the absence of gaseous oxygen. The present work deals with ferrite including copper component, which does not chemisorb methane, to investigate the suppression of the carbon deposition during the reduction of metal oxides by methane. Iron-based oxides of $Cu_xFe_{3-x}O_4$(X=0.25, 0.5, 1.0) was synthesized by the co-precipitation method. Thermogravimetric Analysis(TGA) was used to observe the isothermal reduction behavior of $Cu_xFe_{3-x}O_4$ and $Fe_3O_4$ at $600-900^{\circ}C$ under methane atmosphere. The crystal structures of reduced specimens were characterized by X-rays powder diffraction(XRD) technique. From the analyses of TGA, it is concluded that the reduction kinetics of $CuFe_2O_4$ was the fastest among $Fe_3O_4$ and $Cu_xFe_{3-x}O_4$(X=0.25, 0.5, 1.0). The X-ray diffraction analyses indicated that $Cu_xFe_{3-x}O_4$ was decomposed to Cu and $Fe_3O_4$ phase at $600^{\circ}C$ and was reduced to Cu and Fe phase at $800^{\circ}C$. $Fe_3O_4$, which was reduced at $900^{\circ}C$, showed Fe, graphite and $Fe_3C$ phases. On the contrary, $Cu_xFe_{3-x}O_4$ does not show the graphite or $Fe_3C$ phases. This results infer that Cu component suppress the carbon deposition on Cu-ferrite.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.50-59
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• 1995

Abstract 6 H - SiC single crystal was grown by sublimation growth system which was self - designed and manufactured. In order that the SiC source might be decomposited and sublimed and deposited on the 6H - seed substrate grown by Acheson method, the temperature gradient, the growth parameters of growth temperature and pressure were operately adjusted. So we could get the optimum temperature gradient inside of the crucible. The graphite crucible with SiC powder and thermal shield componants were purified at the elevated temperature by means of Ar purging process and the source baking, then it distributed to reduce the amount of the impurities come from those parts. It was recognized that the optimum growth temperature of the crucible was$2300~2400^{\circ}C$ at the Ar atmospheric pressure of 200~400 torr, and at that moment the growth rate was 500~1000 $\mu\textrm{m}$. And then, the as- grown crystal was cut with the wafer form, the evaluation about the crystal was carried out by XRD, the optical microscopic observation and FT IR spectrum measurement.

• KEPCO Journal on Electric Power and Energy
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• v.1 no.1
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• pp.15-20
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• 2015

To examine the magnetic shielding effect for carbon-based materials at extremely low frequencies (60 Hz), two types of carbon black (Super-P and Denka Black) and a natural graphite (HC-198) were mixed into organic binder at 10 wt.% to produce a coating solution, and a powder coating with varying thickness was applied on an aluminum disk measuring 88 mm in radius. A device was developed to measure the sheielding effect at extremely low frequencies. A closed circuit was achieved by connecting a transformer and a resistor. The applied voltage was fixed at 65 V, and the magnetic field was measured to being the range of 4.95~5.10 mG. Depending on the thickness of the coating layer, the magnetic field showed a decreasing trend. The maximum decrease in the magnetic field of 38.3% was measured when natural graphite was coated with specimens averaging $455{\mu}m$. This study confirmed that carbon-based materials enable magnetic shielding at extremely low frequencies, and that the magnetic shielding effect can be enhanced by varying the coating thickness.

• Resources Recycling
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• v.9 no.4
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• pp.3-15
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• 2000

Reduction of Electric Arc Furnace dust with carbon (graphite) was studied at the temperature range of $800^{\circ}C$ to $1100^{\circ}C$ in Ar gas atmosphere. The briquetted dust with graphite powder was heated in a vertical tube furnace for given reaction time and Quenched in Ar gas atmosphere. It was found that initially the reduction of Zn was chemically controlled and the activation energy was about 120 KJ/mole. Because the almost all of Pb was removed with Cl in the form of $PbCl_2$, it is considered that Pb is removed by chloride reduction. Cu was vaporized as a chloride up to 30% of its original content, but the remaining of Cu would be accumulated with the reduced iron. and also, Cd was removed completely within 15 min. at $1000^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.199-208
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• 1993

The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

• Journal of Powder Materials
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• v.15 no.5
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• pp.393-398
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• 2008

Trace analysis of Cd and Pb at surface modified thick film graphite electrode with Bi nanopowder has been carried out using square-wave anodic stripping voltammetry (SWASV) technique. Bi nanopowder synthesized by gas condensation (GC) method showed the size of $50{\sim}100$ nm with BET surface area, $A_{BET}=6.8m^{2}g^{-l}$. For a strong adhesion of the Bi nanopowder onto the screen printed carbon paste electrode, nafion solution was added into Bi-containing suspension. From the SWASV, it was found that the Bi nanopowder electrode exhibited a well-defined responses relating to the oxidations of Cd and Pb. The current peak intensity increased with increasing concentration of Cd and Pb. From the linear relationship between Cd/Pb concentrations and peak current, the sensitivity of the Bi nanopowder electrode was quantitatively estimated. The detection limit of the electrode was estimated to be $0.15{\mu}g/l$ and $0.07{\mu}g/l$ for Cd and Pb, respectively, on the basis of the signal-to-noise characteristics (S/N=3) of the response for the $1.0{\mu}g/l$ solution under a 10 min accumulation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.7
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• pp.1132-1137
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• 2003

This study dealt with the suppression of interfacial reaction between Nb and MoSi$_2$ for the fabrication of high toughness Nb/MoSi$_2$ laminate composites, based on the results of a thermodynamical estimation. Especially, the effect of ZrO$_2$ particle on the interfacial reaction of Nb/MoSi$_2$ bonding materials has been examined. Nb/MoSi$_2$ bonding materials have been successfully fabricated by alternatively stacking matrix mixtures and Nb sheets and hot pressing in the graphite mould. The addition of ZrO$_2$ particle to MoSi$_2$ matrix is obviously effective for promoting both the interfacial reaction suppression and the sintered density of Nb/MoSi$_2$ bonding materials, since it is caused by the formation of ZrSiO$_4$ in the MoSi$_2$-ZrO$_2$ matrix mixture. The interfacial shear strength of Nb/MoSi$_2$ bonding materials also decreases with the reduction of interfacial reaction layer associated with the content of ZrO$_2$ particle and the fabrication temperature.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1994.04c
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• pp.6-6
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• 1994

Har dmaterials such as cemented carbides with or without coated layer, cermets, ceramics and diamond or c-BN high pressure sintered compact are used for cutting tools, wear -resistant parts, rock drilling bits and/or high pressure vessels. These hardmaterials contain not only hard phase, but also second consituent as the element for forming ductile phase and/or sintering aid, and the mechanical properties of each material depend on (1) the amount of the second constituent as well as (2) the grain size of the hard phase. The hardness of each material mainly depends on these two factors. The fracture strength, however, largely depends on other microstructur a1 factors as well as the above two factors. For all hardmaterials, the fracture strength is consider ably affected by (3) the size of microstructur a1 defect which acts as the fracture source. In cemented carbides, the following factors which are generated mainly due to the addition of the second constituent are also important; (4) the variation of the carbon content in the normal phase region free from V-phase and graphite phase, (5) the precipitation of $Co_3$ during heating at about $800^{\circ}C$,(6) the domain size of binder phase, and (7) the formation of ${\beta}$-free layer or Co-rich layer near the surface of sintered compacts. For cemented carbides coated with thin hard substance, the important factors are as follows; (8) the kind of coated substance, (9) the formation of ${\eta}$-phase layer at the interface between coated layer and substrate, (10) the type of residual stress (tension or compression) in the coated layer which depends on the kind of coating method (CVD or PVD), and (11) the properties of the substrate, and (12) the combination, coherency and periodicity of multi-layers. In the lecture, the details of these factors and their effect on the strength will be explained.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.597-603
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• 2016

Tantalum carbide, which is one of the ultra-high temperature ceramics, was deposited on graphite by low pressure chemical vapor deposition from a $TaCl_5-C_3H_6-Ar-H_2$ mixture. To maintain a constant $TaCl_5/C_3H_6$ ratio during the deposition process, $TaCl_5$ powders were continuously fed into the sublimation chamber using a screw-driven feeder. Sublimation behavior of $TaCl_5$ powder was measured by thermogravimetric analysis. TaC coatings have various phases such as $Ta+{\alpha}-Ta_2C$, ${\alpha}-Ta_2C+TaC_{1-x}$, and $TaC_{1-x}$ depending on the powder feeding methods, the $C_3H_6/TaCl_5$ ratio, and the deposition temperatures. Near-stoichiometric TaC was obtained by optimizing the deposition parameters. Phase compositions were analyzed by XRD, XPS, and Raman analysis.