• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.340-341
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. $Li_4Ti_5O_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here $Li_4Ti_5O_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of $Li_4Ti_5O_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of 1.0 $\sim$ 3.0 V. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transfer during the lithium intercalation and deintercalation process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.589-589
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• 2012

Indium sulfide thin films have been grown onto glass substrates using radio frequency magnetron sputtering at room temperature. The as-deposited film were annealed in nitrogen atmosphere at different temperatures of 100, 200, 300, 400 and $500^{\circ}C$ with an 1 h annealing time. The effect of annealing temperature on composition, structure, morphology and optical properties of the as-grown In2S3 films has been studied. The XRD results indicate that the as-deposited films are composed by a mixture of both cubic ${\alpha}$ and ${\beta}$ crystalline phases, with some fraction of tetragonal phase. The thermal annealing on the films produces the conversion of the cubic crystalline phases to the tetragonal ${\beta}$ one and a crystalline reorientation of the latter phase. The surface morphological analysis reveals that the films grown at $300^{\circ}C$ have an average grain size of ~ 58 nm. These films show a S/In ratio of 0.99. The optical band gap is found to be direct and the films grown at $300^{\circ}C$ shows a higher optical transmittance of 80% and an energy band gap of 2.52 eV.

• Nuclear Engineering and Technology
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• v.33 no.6
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• pp.626-637
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• 2001

A series of study on energy dependence in chemiluminescence dosimetry with sugar and sorbite produced in two different countries was carried out administering a dose of 5 Gy to the samples at six different mean photon energies of 30, 50, 80, 130, 662 and 1250 keV. The results revealed distinct energy dependence of chemiluminescence(CL) output of sugar and sorbite. Although the energy dependence, in general, could be fitted by a polynomial of (os E, with I being radiation energy, up to cubic term, we reached a conclusion that the adoption of a fitting function, $y_{R}$$^{=a}$.(1-e $^{-b.logE}$)$^{c}$ +d, deduced from theoretical energy response curve calculated as the ratio of the mass energy absorption of the samples of interest to the soft tissue is more reasonable and rational. Herecoefficients $y_{R}$ is CL intensity, and a, b, c and d are constants to be determined in the fitting process. Energy dependence of relative sensitivities of one sample to the other, discrepancy in sensitivities of the samples from the two countries, and prominent grain size effect in Sorbitol were also shown.shown.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.119-123
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. Li$_{4}$Ti$_{5}$O$_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here Li$_{4}$Ti$_{5}$O$_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed Li$_{4}$ Ti$_{5}$O$_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of Li$_{4}$ Ti$_{5}$O$_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of 1.0 $\~$ 3.0 V. Furthermore, the crystalline structure of Li$_{4}$ Ti$_{5}$O$_{12}$ didn't transform during the lithium intercalation and deintercalation process.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.6
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• pp.652-660
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• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.737-743
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• 1995

Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1989-1991
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• 2005

Lithium titanium oxide as anode material for energy storage prepared by novel synthesis method. $Li_4Ti_5O_{12}$ based spinel-framework structures are of great interest material for lithium-ion batteries. We describe here $Li_4Ti_5O_{12}$ a zero-strain insertion material was prepared by novel sol-gel method and by high energy ball milling (HEBM) of precursor to from nanocrystalline phases. According to the X-ray diffraction and scanning electron microscopy analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100nm were synthesized. Lithium cells, consisting of $Li_4Ti_5O_{12}$ anode and lithium cathode showed the 173 mAh/g in the range of $1.0{\sim}3.0V$. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transfer during the lithium intercalation and deintercalation process.

• Journal of Powder Materials
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• v.17 no.6
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• pp.464-469
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• 2010

The Cu nanofluid in ethylene glycol was prepared by electrical explosion of wire, a novel one-step method. The X-ray diffraction, field emission scanning electron microscope and transmission electron microscope were used to study the properties of Cu nanoparticles. The results showed that the nanoparticles were consisted of pure face-centered cubic structure and near spherical shape with average grain size of 65 nm. Ultraviolet-visible spectroscopy (UV-Vis) confirmed Cu nanoparticles with a single absorbance peak of Cu surface plasmon resonance band at 600 nm. The nanofluid was found to be stable due to high positive zeta potential value, +51 mV. The backscattering level of nanofluid in static stationary was decreased about 2% for 5 days. The thermal conductivity measurement showed that Cu-ethylene glycol nanofluid with low concentration of nanoparticles had higher thermal conductivity than based fluid. The enhancement of thermal conductivity of nanofluid at a volume fraction of 0.1% was approximately 5.2%.