• E2M - 전기 전자와 첨단 소재
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• 제6권1호
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• pp.69-79
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• 1993

ZnO 바리스터는 전기전자 장치에 비이상적인 써어지 혹은 잡음신호가 침입하는 것을 막기위해서 폭넓게 사용되고 잇다. 많은 연구자들은 저전압 바리스터를 제조하기 위해서 요러가지 방법을 제시하였다. 그렇지만 그러한 방법들은 6V이하의 동작 전압을 갖는 바리스터를 제조하기는 어렵다. 본 연구에서는 새로운 3-성분 종입자법으로 제조한 바리스터의 전도특성을 보고하고자 한다. 온도범위 20-150.deg.C 및 전류 범위 $10^{-8}$~$10^{-1}$A/$cm^{2}$에서 관찰된 바리스터의 전도특성은 측정전류가 증가함에 따라서 다른 기구를 갖는 3개의 영역으로 구분되었다. 측정전류가 $10^{-3}$ A/$cm^{2}$이하인 경우에 오옴전도 혹은 누설전류 영역으로 해석 할 수 있었다. 측정 전류가 $10^{-3}$ A/$cm^{2}$ 부근에서는 이중 쇼트키 장벽에 의한 전도로 해석할 수 있었으며 또한 $10^{-3}$ A/$cm^{2}$ 이상의 전류 영역에서는 턴넬 전도 전류로 해석 할 수 있었다. 이상의 결과로 부터 3-성분 종입자법으로 저전압 바리스터를 제조하는 방법은 지금까지 보고된 어느 다른 방법보다도 우수하며 그 전도기구를 제시하였다.

• 천문학회보
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• 제38권1호
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• pp.48.2-48.2
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• 2013

We present the near-infrared spectra (2.5-5.0 um) of shocked $H_2$ gas, observed with the Infrared Camera onboard the satellite AKARI. Two supernova remnants, IC 443 and HB 21, were observed. IC 443 shows a hint of non-equilibrium ortho-to-para ratio (OPR): 2.4 (-0.2, +0.3). HB 21 also shows an indication of a potential non-equilibrium OPR: 1.8-2.0. These non-equilibrium OPRs are first reported for shocked $H_2$ gas at E(v,J) > 7000 K, as far as we are aware. We concluded that the non-equilibrium OPR probably originates from dissociative J-shocks, considering several factors such as the shock combination requirement, the line ratios, and the possibility that $H_2$ gas can form on grains with a non-equilibrium OPR. The difference in the collision energy of H atoms on grain surfaces would give rise to the observed difference between the OPRs of IC 443 and HB 21, if dissociative J-shocks are responsible for the $H_2$ emission. Our study suggests that shocked-then-cooled $H_2$ gas may play as a heat reservoir with the non-equilibrium OPR.

• Journal of Electrical Engineering and Technology
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• 제4권1호
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• pp.118-122
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• 2009

Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.329-331
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.180-181
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• 2006

CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

• Nutrition Research and Practice
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• 제10권1호
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• pp.81-88
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• 2016

BACKGROUND/OBJECTIVES: Serum ferritin levels are significantly increased after menopause and greatly affect women's health. The aim of this study was to investigate the dietary and non-dietary factors associated with high ferritin levels in postmenopausal women. SUBJECTS/METHODS: Among adult women in 2010-2012, qualified postmenopausal women (n = 3880) were separated into quartiles of serum ferritin. The variable differences among the quartiles of ferritin were determined using either procsurvey chi-square test (${\chi}^2$-test) among categorical variables, or GLM (Generalized Linear Model) among continuous variables. The odds ratio for high ferritin in relation to dietary factors was also determined using procsurvery logistic analysis. RESULTS: Age, obesity, drinking habit, and blood glucose levels were found to be significant indicators of high serum ferritin level after adjusting for all confounding factors. Among the food groups, grain, milk, vegetable, and seaweed intakes were significantly associated with high ferritin levels, but after adjusting for all confounding factors, only grains and vegetables remained significant factors. Among the nutrient groups, calcium, vitamin A, and vitamin C intake were significant factors, but after adjustment, none of the nutrient groups analyzed were associated with a high risk of ferritin. CONCLUSION: Age, obesity, drinking habit, and glucose levels, as well as inadequate intakes of grains and vegetables, were found to be significantly associated with high serum ferritin levels in postmenopausal Korean women.

• Journal of Magnetics
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• 제16권1호
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• pp.15-18
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• 2011

We have studied the $TiO_2$ doping effects on the flux pinning behavior of an $MgB_2$ superconductor synthesized by the in-situ solid-state reaction. From the field-cooled and zero-field-cooled temperature dependences of magnetization, the reversible-irreversible transition of $TiO_2$-doped $MgB_2$ was determined in the H-T diagram (the temperature dependence of upper critical magnetic field and irreversibility line). For comparison, the similar measurements are also obtained from SiC-doped $MgB_2$. The critical current density was estimated from the width of hysteresis loops in the framework of Bean's model at different temperatures. The obtained results manifest that nano-scale $TiO_2$ inclusions served as effective pinning centers and lead to the enhanced upper critical field and critical current density. It was concluded that the grain boundary pinning mechanism was realized in a $TiO_2$-doped $MgB_2$ superconductor.

• 센서학회지
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• 제31권6호
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Archives of Metallurgy and Materials
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• 제65권4호
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• pp.1265-1268
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• 2020

In this study, the effects of adding niobium and vanadium to Fe-based oxide dispersion strengthened alloys are confirmed. The composition of alloys are Fe-20Cr-1Al-0.5Ti-0.5Y₂O₃ and Fe-20Cr-1Al-0.5Ti-0.3V-0.2Nb-0.5Y₂O₃. The alloy powders are manufactured by using a planetary mill, and these powders are molded by using a magnetic pulsed compaction. Thereafter, the powders are sintered in a tube furnace to obtain sintered specimens. The added elements exist in the form of a solid solution in the Fe matrix and suppress the grain growth. These results are confirmed via X-ray diffraction and scanning electron microscopy analyses of the phase and microstructure of alloys. In addition, it was confirmed that the addition of elements, improved the hardness property of Fe-based oxide dispersion strengthened alloys.

• 한국재료학회지
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• 제4권6호
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• pp.681-686
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• 1994

$YBa_{2}Cu_{3}O_{7-x}$결정입계 접합을 이용한 마이크로파 감지소자 $YBa_{2}Cu_{3}O_{7-x}$초전도체 박막을 화학증착법을 이용하여 $LaAIO_{3}$단결정 위에 증착하여 임계온도 90K이상 임계전류밀도 $10^5/A \textrm{cm}^2$(77K) 이상의 우수한 박막을 제작하였다. 이를 포토작업과 이온밀링을 실시하여 수 마이크로미터 크기의 브릿지 형태로 만든 후 이들의 전류전압 특성을 조사하였다. 브릿지에 입사된 마이크로파의 크기에 따라 브릿지 간의 임계전류값의 저하가 관찰되었으며 동시에 샤피로스텝을 관찰할 수 있었다.