• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 한국전기전자재료학회논문지
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• 제24권12호
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• 한국자기학회지
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• 제2권3호
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• pp.222-227
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• 1992

소량의 $V_2O_5$ 첨가가 Mn-Zn 훼라이트의 치밀화, 미세조직 및 자기적 성질에 미치는 영향에 대하여 연구하였다. 최대밀도는 0.1 wt% $V_2O_5$ 첨가시 관측되며, $V_2O_5$ 첨가는 불균일입자성장을 억제하는 것으로 확인되었다. 초투자율은 0.1 wt% $V_2O_5$ 첨가시 최대값을 나타내었고, 손실은 0.03 wt% $V_2O_5$ 첨가시 최소값을 나타내었다. 소량의 $V_2O_5$ 는 Mn-Zn 훼라이트에 고용되지만, 일정량 이상이 되면 2차상을 형성하여 입계에 편석하였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 소성∙가공
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• 제14권8호통권80호
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• pp.681-688
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• 2005

The high-temperature deformation mechanisms of a ${\alpha}+{\beta}$ titanium alloy (Ti-6Al-4V), near-a titanium alloy (Ti-6.85Al-1.6V) and a single-phase a titanium alloy (Ti-7.0Al-1.5V) were deduced within the framework of inelastic-deformation theory. For this purpose, load relaxation tests were conducted on three alloys at temperatures ranging from 750 to $950^{\circ}C$. The stress-versus-strain rate curves of both alloys were well fitted with inelastic-deformation equations based on grain matrix deformation and grain-boundary sliding. The constitutive analysis revealed that the grain-boundary sliding resistance is higher in the near-${\alpha}$ alloy than in the two-phase ${\alpha}+{\beta}$ alloy due to the difficulties in relaxing stress concentrations at the triple-junction region in the near-${\alpha}$ alloy. In addition, the internal-strength parameter (${\sigma}^*$) of the near-${\alpha}$ alloy was much higher than that of the ${\alpha}+{\beta}$ alloy, thus implying that dislocation emission/ slip transfer at ${\alpha}/{\alpha}$ boundaries is more difficult than at ${\alpha}/{\beta}$ boundaries.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.307-312
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• 2018

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

• 한국자기학회지
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• 제13권3호
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• pp.109-114
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• 2003

NiCuZn 페라이트에 $V_2O_{5}$를 0~0.5 wt% 첨가하여 페라이트 페이스트를 준비한 후,스크린 인쇄법으로 내부전극이 4.5회 회전된 임의의 크기(7.7$\times$4.5$\times$l.4 mm)의 칩인덕터를 제조하여, $V_2O_{5}$ 첨가량에 따른 미세구조 및 자기적 특성 변화를 분석하였다. $V_2O_{5}$첨가량이 증가할수록 액상소결이 발달하여 페라이트 입계에 내부전극 Ag의 확산과 Cu 석출 현상이 촉진되고, 이로 인하여 과대입자성장이 발달되었다. 이러한 현상은 칩인덕터의 자기적 특성에 큰 영향을 미쳐,900 $^{\circ}C$에서 소결된 $V_2O_{5}$ wt% 첨가시편의 주파수 10 MHz에서의 인덕턴스 값이 3.7$\mu$H로 0.3 wt% 첨가 시편의 4.2 $\mu$H보다 작게 나타났는데, 이는 Ag와 Cu의 석출량이 많아짐에 따라 잔류응력 발생이 심화되기 때문으로 생각된다 또한 $V_2O_{5}$ 0.5 wt% 첨가한 시편의 경우 소결온도가 증가함에 따라 품질계수 값이 감소하였는데, 이 결과도 페라이트 입계에서의 Ag나 Cu의 금속성분의 석출량 증가 및 과대입자성장에 의한 입자크기 증대로 인하여 전체 전기비저항이 감소되기 때문인 것으로 생각된다. 결론적으로 자기적 특성을 고려할 때 0.3 wt%가 적정 첨가량으로 나타났다.

• 한국세라믹학회지
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• 제16권1호
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• pp.26-30
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• 1979

The microstructures and memory core characteristics of substituted lithium ferrites with addition of $Bi_2O_3$, $V_2O_5$, $Nb_2O_3$, and $P_2O_5$ were investigated. The effects of composite flux on the sintering of the substituted lithium ferrites were also studied. The results show that the addition of $Bi_2O_3$, $V_2O_5$, and $Nb_2O_5$ enhances sintering whereas $Sb_2O_3$ and $P_2O_5$ inhibits it, and that the addition of $Nb_2O_5$ results in uniform grain size while the addition of $Bi_2O_3$ or $V_2O_5$ results in non-uniformity in grain size. When $P_2O_5$ was added with $V_2O_5$ or $Bi_2O_3$, however, it results in uniform grain size and improved memory core properties.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2002년도 춘계학술대회 논문집
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• pp.177-180
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• 2002

The effects of pressing temperatures on the formability and the microstructural evolution during equal channel angular pressing (ECAP) of lamellar Ti-6Al-4V alloy were investigated in this study. ECAP above isothermally 600$^{\circ}C$ was successful without producing any noticeable segments at the specimen surfaces after a single pass of pressing. After 4 passes of ECA pressing, lamellar microstructures were significantly refined revealing equiaxed grains of 0.3$\mu\textrm{m}$ in diameter consisting of high angle grain boundaries. Also these ultrafine grains were relatively stable with little grain growth when annealed up to 600$^{\circ}C$ for 1hour.