• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1774-1776
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• 1999

The (1-x)$MgTiO_3-SrTiO_3$ (x=0,0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature and composition ratio by XRD, SEM and DT-TGA. Increasing the sintering temperature from $1300^{\circ}C$ to $1600^{\circ}C$, second phase was decreased and grain size was increased. The average grain size of the $0.8MgTiO_3-0.2SrTiO_3$ ceramics sintered at $1600^{\circ}C$ were $3.61{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.62-62
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• 2009

Electrical properties of SGS-TFT with 5/5 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$ was fabricated and measured at various temperatures. The field-effect mobility was decreased from 86.25 to 80.42 $cm^2/Vs$ and threshold voltage also decreased from -1.5792 to -1.0492 V, when temperature is increased from room temperature to $100^{\circ}C$. Subthreshold swing, also, increased from 0.3212 to 0.4818 V/dec and $I_{on/off}$ ratio decreased from $5.05{\times}10^7$ to $6.93{\times}10^5$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.11a
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• pp.55-62
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• 2001

An electrolytic copper rod was drawn up to $90\%$ in area reduction and annealed under various conditions. The EBSD measurement of the drawn wire showed that in the center region the <111> + <100> fiber duplex texture was dominant, while in the middle and surface regions relatively defused textures developed with a little higher density in <11w>//wire axis. The inhomogeneous texture in the deformed wire gave rise to the inhomogeneous microstructure and texture after annealing. The annealing texture could be classified into the recrystallization texture developed during low temperatures and at the early stage at a high temperature and the growth texture developed after a prolonged annealing at the high temperature. The recrystallization temperature could be explained by the strain energy release maximization model and the growth texture was discussed based on the grain boundary mobility anisotropy.

• Journal of Biosystems Engineering
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• v.13 no.3
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• pp.59-70
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• 1988

A computer simulation model for rice circulating concurrent-flow dryer was developed and verified by conduction a series of pilot-scale experiment. The effects of design parameter and operating conditions on dryer performance were analyzed by using simulation. The results indicated that the developed model was found suitable for analyzing operating characteristics. The other results from simulation also showed that; 1) an increse in the initial moisture content resulted in an increase in the drying rate and a reduction in the grain temperature and total energy requirements. 2) an increase in the drying air temperature resulted in an increase in the drying rate and grain temperature. 3) an increase in air flow rate resulted in an radical increase in drying rate, fan power requirements and total energy requirements but an radical decrease in final head rice yield. 4) an increase in the bed depth resulted in an increase in fan power requirements and a lowering of the final head rice yield.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.777-783
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• 1994

Oxidation behavior of hot-pressed silicon nitride ceramics with various sintering additives has been investigated. The weight gain of each specimens has shown in the range of 0.11 mg/$\textrm{cm}^2$ ~3.4 mg/$\textrm{cm}^2$ at 140$0^{\circ}C$ for 192 h and eleven compositions have shown good oxidation resistance with the weight gain below 0.5 mg/$\textrm{cm}^2$. The oxidation rate has been shown to obey the parabolic rate law and the oxidized surface has consisted of $\alpha$-cristobalite and M2Si2O7 or MSiO3 (M=rare earth or transition metals) phase. The oxidation rate of each specimens has related to the eutectic temperature between additive oxide and SiO2, and ionic radius of additive oxides, respectively. From the above results, it could be concluded that the oxidation behavior of hot pressed silicon nitride is dominated by the high temperature properties of grain boundary glassy phase and the high temperature properties of grain boundary glassy phase are affected by the ionic radius of additive oxides.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.368-368
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• 2010

Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from $-40^{\circ}C$ to $100^{\circ}C$. Basic curve, $V_G-I_D$, is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since $V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.03b
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• pp.171-175
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• 1999

the high temperature deformation behavior of 304 stainless steel was characterized by the hot torsion test. Continuous deformation was carried out at the temperature ranges 900-110$0^{\circ}C$ and the strain rate ranges 5x10-2~5/sec. The formulation of the flow stress curves was developed as subtraction form which was based on dynamic softening mechanisms The volume fraction of dynamic recrystallization and the mean grain size could be expressed as a function of deformation variables temperature (T) strain ($\varepsilon$) strain rate ($\varepsilon$) The calculated values of flow stress and mean grain size could be well matched with experimental values.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.803-808
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• 1996

Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.

• Journal of Surface Science and Engineering
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• v.44 no.4
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• pp.137-143
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• 2011

The internal stress and magnetic properties (coercivity and squareness) of Ni-Fe nano thin film synthesized by electrodeposition method were studied as a function of acidic chloride bath conditions (composition and temperature) and current density. Fe deposition patterns were different depending on the temperature of the solution, the stress of film decreased with increasing the solution temperature, and the depending on the amount of Fe deposition showed a parabolic shape. The grain size of film was inversely proportional to stress of thin film. The internal stress of thin film and magnetic properties were deeply relevant, and the stress of thin film had a relationship with bath conditions and grain size of the thin film surface.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.921-924
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• 2003

A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.