• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.193-198
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• 2002

In 1his paper, applicability of laser welding to joining process of single crystal nickel base superalloy turbine blades was investigated. Because heat input of laser welding is more precisely controlled 1han TIG welding, it is possible to optimize solidification microstructure of the welds. Since in single crystal nickel base superalloy the crystal orientation have a significant effect on the strength, it is important to control the solidification microstructure in the fusion zone. A single crystal nickel base supera1loy, CMSX-4, plates were bead-on welded and butt welded using a $CO_2$ laser. The effects of microstructure and crystal orientation on properties of the weld joints were investigated. In bead-on weldling, welding directions were deviated from the base metal [100] direction by 0, 5, 15 and 30 degrees. The welds with deviation angles of 15 and 30 degrees showed fusion zone transverse cracks. As the deviation angles became larger, the fusion zone had more cracking. In the cross section microstructure, the fusion zone grains in 0 and 5 degrees welds grew epitaxially from the base metal spins except for the bead neck regions. The grains in the bead neck regions contained stray crystals. As deviation angles increased, number of the stray crystals increased. In butt welding, the declinations of the crystal orientation of the two base metals varied 0, 5 and 10 degrees. All beads had no cracks. In the 5 degrees bead, the cross section and surface microstructures showed that the fusion zone grains grew epitaxially from the base metal grains. However, the 10 degrees bead, the bead cross section and surface contained the stray crystals in the center of the welds. Orientations of the stray crystals accorded with the heat flow directions in the weld pool. When the welding direction was deviated from the base metal [100] direction, cracks appeared in the area including the stray crystals. The cracks developed along the grain boundaries of the stray crystals with high angles in the final solidification regions at the center of the welds. The fracture surfaces were covered with liquid film. The cracks, therefore, found to be solidification cracks due to the presence of low melting eutectic. As the results, in both bead-on welding and butt welding the deviation angles should be control within 5 degrees for preventing the fusion zone cracks. To investigate the mechanical properties of the weld joints, high temperature tensile tests for bead-on welds with deviation angles of 0 and 5 degrees and the butt welds with dec1ination angles of 0, 5 and 10 degrees were conducted at 1123K. The the tensile strength of all weld joints were more 1han 800MPa that is almost 80% of the tensile strength of the base metal. The strength of the laser weld joints were more than twice that of tue TIG weld joints with a filler metal of Inconel 625. The results reveals 1hat laser welding is more effective joining process for single crystal nickelbase superalloy turbine blades 1han TIG welding.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• 암석학회지
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• 제16권1호
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• pp.12-26
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• 2007

12개 지역에서 분포하는 108개소의 중생대 화강암류의 석산에서 발달하는 수직의 1번 및 2번 면에 대한 분포 특성을 규명하였다. 각 지역에서 발달하는 수직 결의 방향성은 다양하다. 그러나 전국의 이들 수직 면은 전반적으로 북북동 방향이 우세하다. 수직면의 방향을 종합한 광역 분포도에서 이들 면의 빈도 등급별방향을 살펴보면 (1) $N2{\sim}10^{\circ}E(1st-order),\;(2)\;N15{\sim}25^{\circ}E(2nd-order),\;(3)\;N45{\sim}70^{\circ}E,\;N10{\sim}30^{\circ}W$ 및 $N70{\sim}80^{\circ}W(3rd-order)$ 방향의 3조의 우세 배향을 보여준다. 수평 채석면과 수직 채석면의 상대적인 분리성에 의한 화강암 석산의 유형은 R-유형, G-유형 및 H-유형의 3 종류로 분류되었다. 1번 면이 수평면을 형성하고, 2번 및 3번 면이 수직면을 형성하는 유형(R-유형), 2번 면이 수평면을 형성하고, 1번 및 3번 면이 수직면을 형성하는 유형(G-유형), 3번 면이 수평면을 형성하고, 1번 및 2번 면이 수직면을 형성하는 유형(H-유형) 등이다. 트라이아스기 화강암류의 석산은 R-유형 및 G-유형, 쥬라기 화강암류의 석산은 R-유형, G-유형 및 H-유형 그리고 백악기 화강암류의 석산은 주로 R-유형으로 각각 분류되었다. 이러한 석산 유형 중, 쥬라기 화강암류의 석산에서 가장 다양한 유형이 확인되었다. 유형별 분포비율을 살펴보면, R-유형의 분포비율이 77.8%를 차지하여 22.2%를 차지하는 G-유형 및 H-유형에 비하여 분포비율이 높다. 일반적으로 화강암질암에서는 흔히 물성의 이방성이 확인되며, 할석면의 방향과 열린 미세균열의 방향과는 상호 밀접한 상관성이 있다. 한편 관련 연구사례를 통하여 미세균열의 우세한 방향은 치대 압축 주응력의 방향을 지시함을 알 수 있다.

• 한국재료학회지
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• 제29권4호
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• pp.205-210
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• 2019

$Pb(Zr,Ti)O_3$ (PZT) is used for the various piezoelectric devices owing to its high piezoelectric properties. However, lead (Pb), which is contained in PZT, causes various environment contaminations. $(K,Na)NbO_3$ (NKN) is the most well-known candidate for a lead-free composition to replace PZT. A single crystal has excellent piezoelectric-properties and its properties can be changed by changing the orientation direction. It is hard to fabricate a NKN single crystal due to the sodium and potassium. Thus, $(Na,K)NbO_3-Ba(Cu,Nb)O_3$ (NKN-BCuN) is chosen to fabricate the single crystal with relative ease. NKN-BCuN pellets consist of two parts, yellow single crystals and gray poly-crystals that contain copper. The area that has a large amount of copper particles may melt at low temperature but not the other areas. The liquid phase may be responsible for the abnormal grain growth in NKN-BCuN ceramics. The dielectric constant and tan ${\delta}$ are measured to be 684 and 0.036 at 1 kHz in NKN-BCuN, respectively. The coercive field and remnant polarization are 14 kV/cm and $20{\mu}C/cm^2$.

• 한국재료학회지
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• 제12권11호
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• 한국세라믹학회지
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• 제49권5호
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• pp.399-403
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• 2012

SnO thin films were fabricated by rf reactive sputtering on borosilicate substrates with an Sn target and Ar/$O_2$ gas mixture. The effect of rf power on the structural, electrical, and optical properties of SnO thin films was investigated with XRD, AFM, SEM, Hall effect measurements, and UV-Vis spectrometer. As a plasma power increased the crystallinity with a preferred orientation of SnO thin films was improved and the grain size slightly increased. However the grains were coalesced and excessively irregular in shape. The electrical conductivity of SnO thin films demonstrated a relatively low p-type conductivity of 0.024 $(Wcm)^{-1}$ at a higher power condition. Lastly, SnO thin films had poor optical transmittance in the visible range as a plasma power increased.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.419-419
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• 2016

High efficiency silicon solar cell requires the textured front surface to reduce reflectance and to improve the light trapping. In case of mono-crystalline silicon solar cell, wet etching with alkaline solution is widespread. However, the alkali texturing methods are ineffective in case of multi-crystalline silicon wafer due to grain boundary of random crystallographic orientation. The acid texturing method is generally used in multi-crystalline silicon wafer to reduce the surface reflectance. However the acid textured solar cell gives low short-circuit current due to high reflectivity while it improves the open-circuit voltage. To reduce the reflectivity of multi-crystalline silicon wafer, double texturing method with combination of acid and reactive ion etching is an attractive technical solution. In this paper, we have studied to optimize RIE experimental condition with change of RF power (100W, 150W, 200W, 250W, 300W). During experiment, the gas ratio of SF6 and O2 was fixed as 30:10.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.189-189
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• 2016

In this study, the Al-rich AlTiSiN thin films that consisted of TiN/AlSiN nano-multilayers were deposited on the steel substrate by magnetron sputtering, and their high-temperature oxidation behavior was investigated, which has not yet been adequately studied to date. Since the oxidation behavior of the films depends sensitively on the deposition method and deposition parameters which affect their crystallinity, composition, stoichiometry, thickness, surface roughness, grain size and orientation, the oxidation studies under various conditions are imperative. AlTiSiN nano-multilayer thin films were deposited on a tool steel substrate, and their oxidation behavior of was investigated between 600 and $1000^{\circ}C$ in air. Since the amount of Al which had a high affinity for oxygen was the largest in the film, an ${\alpha}-Al_2O_3-rich$ scale formed, which provided good oxidation resistance. The outer surface scale consisted of ${\alpha}-Al_2O_3$ incoporated with a small amount of Ti, Si, and Fe. Below this outer surface scale, a thin ($Al_2O_3$, $TiO_2$, $SiO_2$)-intermixed scale formed by the inwardly diffusing oxygen. The film oxidized slower than the $TiO_2-forming$ kinetics and TiN films, but faster than ${\alpha}-Al_2O_3-forming$ kinetics. During oxidation, oxygen from the atmosphere diffused inwardly toward the reaction front, whereas nitrogen and the substrate element of iron diffused outwardly to a certain extent.

• 한국정보통신학회논문지
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• 제7권2호
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• pp.250-254
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• 2003

본 논문에서는 2GHz 대역 RF 대역통과 필터 응용을 위한 FBAR 소자에 대한 연구를 발표한다. 본 연구의 FBAR 소자는 크게 상부 및 하부 전극 사이에 압전체(AlN)가 삽입되어 있는 공진부와 SiO2/W이 여러층으로 적층되어 있는 음향반사층 두 부분으로 구성되어 있다. RF sputtering 방법으로 증착된 AlN 박막은 c축이 기판에 수직한 정도가 우수한 c축 우선 배향성을 갖는다. 이때 결정립(grain)은 길고 얇은 주상형(columnar)을 보인다. 뿐만아니라, 우수한 품질계수(4300)와 반사손실(37.19 dB)도 얻어졌다.