• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.472-473
• /
• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.329-331
• /
• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2(hr), respectively. The structural, dielectric and pyroelectric properties with addition of $Y_2O_3$ were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of $Y_2O_3$. Relative dielectric constant and dielectric loss of the specimen doped with 0.2wt% $Y_2O_3$ were 597 and 0.022, respectively. Remanent polarization and coercive field of the specimen doped with 0.4wt% $Y_2O_3$ were $8.5[{\mu}C/cm^2]$ and 10.2[kV/cm], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.91-92
• /
• 2006

The important merit of Bi-2212/Ag wire is to apply cable as round wire state. Bi-2212 high Tc superconducting wires were fabricated in order to apply Rutherford cable near the future. Various Ag ratio from 0.22 to 0.42 of Ag tubes for PID (powder-In-Tube) process were used to investigate the workability and to prevent breakage of filaments during drawing. In order to find proper heat treatment condition, we investigated micro-structure of Bi-2212/Ag wires by using differential thermal analysis, XRD and SEM. The effect of atmosphere on the peritectic decomposition temperature of precursor was investigated. The shape of grain was observed by SEM to investigate Bi-2212 phase formation in filaments. The higher of Ag ratio of mono filament had the higher critical current density, Jc. The wire with 0.42 of Ag ratio showed 7,886 A/cm2 of Jc at 77K.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.6
• /
• pp.258-261
• /
• 2011

A ferroelectric $(Bi,La)_4Ti_3O_{12}$ (BLT) thin film fabricated by the pulsed-DC sputtering method was evaluated on a cell structure to check its compatibility to high density ferroelectric random access memory (FeRAM) devices. The BLT composition in the sputtering target was $Bi_{4.8}La_{1.0}Ti_{3.0}O_{12}$. Firstly, a BLT film was deposited on a buried Pt/$IrO_x$/Ir bottom electrode stack with W-plug connected to the transistor in a lower place. Then, the film was finally crystallized at $700^{\circ}C$ for 30 seconds in oxygen ambient. The annealed BLT layer was found to have randomly oriented and small ellipsoidal-shaped grains (long direction: ~100 nm, short direction: ~20 nm). The small and uniform-sized grains with random orientations were considered to be suitable for high density FeRAM devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.11
• /
• pp.965-968
• /
• 2007

In this study we investigated the variation of the substrate temperatures using RF sputtering to identify the effect on the structure and electrical properties by c-axis orientation of ZnO thin film. ZnO thin films were prepared on Al/Si substrate. In our experimental results, ZnO thin film at $300^{\circ}C$ was well grown with (002) peak of ZnO thin film, the thin film showed the high resistivity with the value of $5.9{\times}10^7\;{\Omega}cm$ and the roughness with 27.06 nm. As increased the substrate temperatures, the grain size of ZnO thin films was increased. From these results, we could confirm the suitable substrate temperature of ZnO thin films for FBAR(film bulk acoustic resonator).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.12
• /
• pp.797-802
• /
• 2014

In this study, in order to develop the capacitor composition ceramics with the good dielectric properties, $(Ba_{1-x}Ca_x)(Ti_{0.85}Zr_{0.12}Sn_{0.03})O_3$ (abbreviated as BCTZ) ceramics were prepared by the conventional solid-state reaction method. The effects of Ca substitution on the microstructure and dielectric properties was investigated. The X-ray diffraction patterns demonstrated that all the specimens showed perovskite phase, and secondary phases are indicated in the measurement range of X-ray diffraction. Also, all the specimens indicated an rhombohedron phase structure. It was identified from the X-ray diffraction patterns that the secondary phase formed in grain boundaries and then decreased the dielectric properties. For all the specimens, observed one peak was tetragonal cubic phase transition temperature($T_c$), which is located in the vicinity of room temperature.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.231-237
• /
• 1999

$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

• Transactions of Materials Processing
• /
• v.21 no.4
• /
• pp.240-245
• /
• 2012

With the increasing demand for light-weight materials to reduce fuel consumption, the automobile industry has extensively studied magnesium alloys which are light weight metals. The intrinsic poor formability and poor ductility at ambient temperature due to the hexagonal close-packed (HCP) crystal structure and the associated insufficient number of independent slip systems restricts the practical usage of these alloys. Hot working of magnesium alloys using a forging or extrusion enables net-shape manufacturing with enhanced formability and ductility since there are several operative non-basal slip systems in addition to basal slip plane, which increases the workability. In this research, the thermomechanical properties of AZ80 Mg alloy were obtained by compression testing at the various temperatures and strain rates. Optical microscopy and EBSD were used to study the microstructural behavior such as misorientation distribution and dynamic recrystallization. The results were correlated to the hardening and the softening of the alloy. The experimental data in conjunction with a physical explanation provide the optimal conditions for net-shape forging under hot or warm temperatures through control of the grain refinement and the working conditions.

• Journal of the Korean Society for Heat Treatment
• /
• v.33 no.6
• /
• pp.271-276
• /
• 2020

The relationship between the hardness and interlamellar spacing of discontinuous precipitates (DPs) formed by continuous cooling was studied for Mg-9%Al-1%Zn alloy. After solution treatment at 683 K for 24 h, the specimens were cooled to room temperature with different cooling rates ranging from 0.2 to 2 K·min^-1, in order to obtain DPs with various interlamellar spacings. It was found that cooling rate of 2 K·min^-1 yielded only small amount of nodular DPs at the grain boundaries, while cooling rates below 2 K·min^-1 yielded both DPs and continuous precipitates (CPs). The volume fraction of DPs increased with increasing cooling rate up to 0.5 K·min^-1, over which it abruptly decreased. The hardness of DPs was increased with an increase in the cooling rate, whereas the interlamellar spacing of the DPs was decreased with respect to cooling rate. The hardness of the DPs formed by continuous cooling was correlated with the interlamellar spacing and can follow a Hall-Petch type relation as in the case of pearlite with lamellar morphology.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.1
• /
• pp.13-17
• /
• 2006

The effects of an organic additive, naphthalene trisulfonic acid (NTSA), contained in the nickel sulfamate bath on the surface properties of the electrodeposited nickel layer were investigated through electrochemical technique, x-ray diffraction analysis, and microscopic observation. The addition of NTSA facilitated the oxidation process of electrodeposited nickel layer during anodic scan and also increased the hardness and internal stress of the nickel film as the applied current density became higher. It seems that NTSA modulated the deposit structure during electrodeposition and so induced higher distribution of (110) orientation with respect to (200). With the increase of the NTSA in the bath, nickel layer was formed in small grain size, which resulted in enhanced surface evenness and brightness.