• 한국재료학회지
• /
• 제8권7호
• /
• pp.579-583
• /
• 1998

P가 고농도로 도핑된 다결정 Si 기판 위에 Co/Ti 이중층막을 스퍼터 증착하고 급속열처리함으로써 얻어지는 실리사이드 층구조, 실리사이드막의 응집, 그리고 도펀트의 재분포 등을 단결정 Si 기판 위에서의 그것들과 비교하여 조사하였다. 다결정 Si 기판위에 형성한 Co/Si 이중층을 열처리할 때 단결정 기판에서의 경우보다 $CoSi_2$로의 상천이는 약간 더 낮은 온도에서 시작되며, 막의 응집은 더 심하게 일어난다. 또한, 다결정 Si 기판내의 도펀트보다 웨이퍼 표면을 통하여 바깥으로 outdiffusion 함으로써 소실되는 양이 훨씬 더 많다. 이러한 차이는 다결정 Si 내에서의 결정립계 확산과 고농도의 도펀트에 기인한다. Co/Ti/doped-polycrystalline si의 실리사이드화 열처리후의 층구조는 polycrystalline CoSi2/polycrystalline Si 으로서 Co/Ti(100)Si을 열처리한 경우의 층구조인 Co-Ti-Si/epi-CoSi2/(100)Si 과는 달리 Co-Ti-Si층이 사라진다.

• 대한기계학회논문집
• /
• 제9권1호
• /
• pp.40-46
• /
• 1985

본 연구에서는 제 1보에 밝힌 바 있는 용접 HAZ조직의 파괴인성에 영향을 주 는 PWHT 유지시간과 가열속도에 이어, 용접 HAZ의 불안정포성파괴에 미치는 용접잔유 응력의 영향을 상세히 밝히기 위하여 일층 용접을 실시하고, 이 용접재의 용접HAZ에 단축상태의 일정한 응력을 작용시켜 주면서 소정의 열처리를 실시함으로써 용접후 열 처리시 용접HAZ에 작용된 응력의 크기가 파괴인성에 어떠한 영향을 미치는지를 COD파 괴인성시험, 미소경도시험, 파면관찰을 통하여 고찰하고자 한다.

• The Journal of Advanced Prosthodontics
• /
• 제9권5호
• /
• pp.394-401
• /
• 2017

PURPOSE. The purpose of this study was to compare the optical properties of pre-colored dental monolithic zirconia ceramics of various thicknesses sintered in a microwave and those in a conventional furnace. MATERIALS AND METHODS. A2-shade of pre-colored monolithic zirconia ceramic specimens ($22.0mm{\times}22.0mm$) in 3 thickness groups of 0.5, 1.0, and 1.5 mm were divided into 2 subgroups according to the sintering methods (n=9): microwave and conventional sintering. A spectrophotometer was used to obtain CIELab color coordinates, and translucency parameters and CIEDE2000 color differences (${\Delta}E_{00}$) were measured. The relative amount of monoclinic phase ($X_m$) was estimated with x-ray diffraction. The surface topography was analyzed by atomic force microscope and scanning electron microscope. Statistical analyses were conducted with two-way ANOVA (${\alpha}=.05$). RESULTS. There were small interaction effects on CIE $L^*$, $a^*$, and TP between sintering method and thickness (P<.001): $L^*$ (partial eta squared ${{\eta}_p}^2=0.115$), $a^*$ (${{\eta}_p}^2=0.136$), and TP (${{\eta}_p}^2=0.206$), although higher $b^*$ values were noted for microwave sintering regardless of thickness. Color differences between two sintering methods ranged from 0.52 to 0.96 ${\Delta}E_{00}$ units. The $X_m$ values ranged from 7.03% to 9.89% for conventional sintering, and from 7.31% to 9.17% for microwave sintering. The microwave-sintered specimen demonstrated a smoother surface and a more uniform grain structure compared to the conventionally-sintered specimen. CONCLUSION. With reduced processing time, microwave-sintered pre-colored dental monolithic zirconia ceramics can exhibit similar color perception and translucency to those by conventional sintering.

• 한국세라믹학회지
• /
• 제31권12호
• /
• pp.1429-1436
• /
• 1994

We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

• 한국세라믹학회지
• /
• 제47권2호
• /
• pp.199-204
• /
• 2010

A dual-phase ceramic membrane consisting of gadolinium-doped ceria (GDC) as an oxygen ion conducting phase and $MnCo_2O_4$ as an electron conducting phase was fabricated by sintering a GDC and $MnCo_2O_4$ powder mixture. The $MnCo_2O_4$ was found to maintain its spinel structure at temperatures lower than $1200^{\circ}C$. (Mn,Co)(Mn,Co)$O_4$ spinel, manganese and cobalt oxides formed in the sample sintered at $1300^{\circ}C$ in an air atmosphere. XRD analysis revealed that no reaction phases occurred between GDC and $MnCo_2O_4$ at $1200^{\circ}C$. The electrical conductivity did not exhibit a linear relationship with the $MnCo_2O_4$ content in the composite membranes, in accordance with percolation theory. It increased when more than 15 vol% of $MnCo_2O_4$ was added. The oxygen permeation fluxes of the composite membranes increased with increasing $MnCo_2O_4$ content and this can be explained by the increase in electrical conductivity. However, the oxygen permeation flux of the composite membranes appeared to be governed not only by electrical conductivity, but also by the microstructure, such as the grain size of the GDC matrix.

• The Korean Journal of Ceramics
• /
• 제3권4호
• /
• pp.263-268
• /
• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국전기전자재료학회논문지
• /
• 제17권12호
• /
• pp.1356-1361
• /
• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 한국세라믹학회지
• /
• 제53권2호
• /
• pp.145-149
• /
• 2016

$(Bi_{1/2}Na_{1/2})_{0.94}Ba_{0.06}(Ti_{1-x}Nb_x)O_3$ (BNBTxNb) ceramics were investigated in terms of the crystal structure as well as the ferroelectric, dielectric, and piezoelectric properties. While little change was observed in the microstructure except for a slight decrease in the average grain size, a significant change was noticed in the temperature dependence of dielectric and piezoelectric properties. It was shown that the property changes are closely related to the downward shift in the position of the ferroelectric-to-relaxor transition temperature with increasing amount of Nb doping. A special emphasis is put on the fact that Nb doping is so effective at decreasing the ferroelectric-to-relaxor transition temperature that even at no more than 2 at.% Nb addition, the transition temperature was already brought down slightly below room temperature, resulting in the birth of a large strain at 0.46 %, equivalent to $S_{max}/E_{max}=767pm/V$.

• 한국전기전자재료학회논문지
• /
• 제25권7호
• /
• pp.506-510
• /
• 2012

In this study, lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at $1,020^{\circ}C$ showed the maximum value of 4.5 $g/cm^3$. The average grain size of the $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimen sintered at $1,020^{\circ}C$ is about 0.83 ${\mu}m$. Electromechanical coupling factor, relative dielectric constant and dielectric loss of $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimens sintered at $1,020^{\circ}C$ were 0.252, 741 and 0.043% respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.456-456
• /
• 2008

In the past few years, the deposition and characterization of cadmium sulfide semiconducting thin films has received a considerable amount of interest due to their potential application in the area of electronic and opto-electronic devices fabrications. Polycrystalline CdS thin films posses good optical transmittance, wide band-gap and electrical properties makes it as one of the ideal material for their application to solar cell fabrication. Cadmium sulfate thin films were deposited by the chemical bath deposition method using tartaric acid and triethanolamine as a complexing agent. Deposition parameters such as pH, temperature, deposition time and concentration of the reactant species were optimized so as to obtain reflecting, good adherent uniform thin films on the glass substrate. Reaction mechanism of the thin film formation is also reported. The crystallographic structure and the crystallite size were studied by the X-ray diffraction pattern. The optical band-gap of deposited film is identified by measuring the transmittance in the visible region. Temperature dependence of resistivity confirmed the semiconducting behavior of the film. Scanning electron micrographs (SEM) showed the presence of grain particles of size 50 nm.