• Journal of Surface Science and Engineering
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• v.55 no.6
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• pp.363-367
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• 2022

Transparent ZnO/Ti/ZnO (ZTZ) tri-layered films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate. The thickness of the ZnO and Ti films was kept at 50 and 10 nm to consider the effect of the electron irradiation on the crystallization and optoelectrical properties of the films. From the XRD spectra, post-depostion electron irradiated films showed the characteristic peaks of ZnO(002) and Ti(200), respectively. the observed grain size of the ZnO(002) and Ti(200) enlarged up to 18.27 and 12.16 nm at an irradiation condition of 750 eV. In the figure of merit which means an optoelectrical performance of the films, as deposited films show a figure of merit of 2.0×10^-5 𝛺^-1, while the films electron irradiated at 750 eV show a higher figure of merit of 5.7×10^-5 𝛺^-1.

• Journal of IKEEE
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• v.25 no.1
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• pp.64-68
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• 2021

We demonstrate an effect of annealing temperature on imprinting process of BiLaO thin film for liquid crystal alignment. BiLaO prepared sol-gel process was deposited by spin coating on a glass substrate, and then transferred to a pre-fabricated aligned pattern which is fabricated on a silicon wafer by laser interference lithography. Thin film was annealed at different temperature of 100, 150, 200, and 250 ℃. From the polarized optical microscopy analysis, the liquid crystal orientation was not uniform at the annealing temperature of 200 ℃ or lower and the uniform liquid crystal alignment characteristics were confirmed at the annealing temperature of 250 ℃. From atomic force microscopy, the pattern was not transferred at a temperature of 200 ℃ or lower. In contrast, the pattern was transferred at 250 ℃. Anisotropy of the thin film was obtained by the alignment pattern transferred at a temperature of 250 ℃, and the liquid crystal molecules could be evenly oriented on the thin film. Therefore, it was confirmed that the liquid crystal alignment process by the imprinting process of the BiLaO oxide film was affected by the annealing temperature.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.249-256
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• 2008

0.5 wt% Al doped ZnO thin films (AZO) were prepared on glass substrates using RF magnetron sputtering method. Thin films were grown at substrate temperature of $250^{\circ}C$, RF power of 75W, working pressure of 10 mTorr, by changing the $O_2/Ar$ pressure ratio from 0% to 16.7%. The effects of oxygen partial pressure during the deposition process on structural and optical properties of the films were investigated using XRD, SEM, AFM, EPMA and UV-visible spectroscopy. All the AZO thin films were grown as hexagonal wurtzite phase with the c-axis preferred out-of-plane orientation. The surface roughness and grain size of AZO films decreased with increasing oxygen ratio from 10.6 nm to 3.2 nm and 94.9 nm to 30.9 nm, respectively. On the other hand, the transmittance and band gap energy of the AZO films increased from 84.7% to 92.6% and 3.24 eV to 3.28 eV, respectively with increasing the $O_2/Ar$ pressure ratio.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.150-155
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• 2021

Zinc oxide (ZnO) based transparent conducting oxides (TCO) thin films, are used in many applications such as solar cells, flat panel displays, and LEDs due to their wide bandgap nature and excellent electrical properties. In the present work, fluorine and aluminium-doped ZnO targets are prepared and thin films are deposited on soda-lime glass substrate using a RF magnetron sputtering unit. The aluminium concentration is fixed at 2 wt%, and the fluorine concentration is adjusted between 0 to 2.0 wt% with five different concentrations, namely, Al2ZnO98(AZO), F0.5AZO97.5(FAZO1), F1AZO97(FAZO2), F1.5AZO96.5(FAZO3), and F2AZO96(FAZO4). Thin films are deposited with an RF power of 40 W and working pressure of 5 m Torr at 270 ℃. The morphological analysis performed for the thin film reveals that surface roughness decreases in FAZO1 and FAZO2 samples when doped with a small amount of fluorine. Further, optical and electrical properties measured for FAZO1 sample show average optical transmissions of over 89 % in the visible region and 82.5 % in the infrared region, followed by low resistivity and sheet resistance of 3.59 × 10-4 Ωcm and 5.52 Ω/sq, respectively. In future, these thin films with excellent optoelectronic properties can be used for thin-film solar cell and other optoelectronics applications.

• Korean Journal of Materials Research
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• v.31 no.3
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• pp.132-138
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• 2021

Electrochromic devices (ECDs) have been drawing great attention due to their high color contrast, low power consumption, and memory effect, and can be used in smart windows, automatic dimming mirrors, and information display devices. As with other electronic devices such as LEDs (light emitting diodes), solar cells, and transistors, the mechanical flexibility of ECDs is one of the most important issue for their potential applications. In this paper, we report on flexible ECDs (f-ECDs) fabricated using an all-in-one EC gel, which is a mixture of electrolyte and EC material. The f-ECDs are compared with rigid ECDs (r-ECDs) on ITO glass substrate in terms of color contrast, coloration efficiency, and switching speed. It is confirmed that the f-ECDs embedding all-in-one gel show strong blue absorption and have competitive EC performance. Repetitive bending tests show a degradation of electrochromic performance, which must be improved using an optimized device fabrication process.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.157-160
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• 2021

As an insulator for a thin film transistor(TFT) and an encapsulation material of organic light emitting diode(OLED), aluminum oxide (Al₂O₃) has been widely studied using several technologies. Especially, in spite of low deposition rate, atomic layer deposition (ALD) has been used as a process method of Al₂O₃ because of its low process temperature and self-limiting reaction. In the Al₂O₃ deposition by ALD method, Ar Purge had some crucial effects on the film properties. After reaction gas is injected as a formation of pulse, an inert argon(Ar) purge gas is injected for gas desorption. Therefore, the process parameter of Ar purge gas has an influence on the ALD deposited film quality. In this study, Al₂O₃ was deposited on glass substrate at a different Ar purge time and its structural characteristics were investigated and analyzed. From the results, the growth rate of Al₂O₃ was decreased as the Ar purge time increases. The surface roughness was also reduced with increasing Ar purge time. In order to obtain the high quality Al₂O₃ film, it was known that Ar purge times longer than 15 sec was necessary resulting in the self-limiting reaction.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.298-302
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• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• Journal of Sensor Science and Technology
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• v.32 no.3
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• pp.140-146
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• 2023

Water quality is crucial for human health and the environment. Accurate measurement of the quantity of organic carbon in water is essential for water quality evaluation, identification of water pollution sources, and appropriate implementation of water treatment measures. Total organic carbon (TOC) analysis is an important tool for this purpose. Although other methods, such as chemical oxygen demand (COD) and biochemical oxygen demand (BOD) are also used to measure organic carbon in water, they have limitations that make TOC analysis a more favorable option in certain situations. For example, COD requires the use of toxic chemicals, and BOD is time-consuming and can produce inconsistent and unreliable results. In contrast, TOC analysis is rapid and reliable, providing accurate measurements of organic carbon content in water. However, common methods for TOC analysis can be complex and energy-intensive because of the use of high-temperature heaters for liquid-to-gas phase transitions and the use of acid, which present safety risks. This study focuses on a TOC analysis method using TiO₂ photocatalysis, which has several advantages over conventional TOC analysis methods, including its low cost and easy maintenance. For TiO₂, rutile and anatase powders are mixed with an inorganic binder and spray-coated onto a glass fiber substrate. The TiO₂ powder and inorganic binder solutions are adjusted to optimize the photocatalytic reaction performance. The TiO₂ photocatalysis method is a simple and low-power approach to TOC analysis, making it a promising alternative to commonly used TOC analysis methods. This study aims to contribute to the development of more efficient and cost-effective approaches for water quality analysis and management by exploring the effectiveness and reliability of the developed equipment.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.33-38
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• 2022

With an attempt to suppress the moiré phenomenon caused by the interference between the black matrix of a display panel and the metal grid of a camera, we have fabricated an anti-moiré filter using light diffusing particles (LDPs) with the average diameter of 20 ㎛. It is demonstrated that the anti-moiré filter coated on a glass substrate (370 mm × 470 mm) using a table slot-die coater reduces the moiré intensity to a great extent when the area covered by LDPs is 50%. To quantify the intensity of moiré phenomenon, we have measured the lightness ratio and found that it is reduced from 132.12 down to 105.71 by the filter. To find the optimum area covered by LDPs, we have performed ray tracing simulations using Mie scatters as a substitute for LDPs. From the simulated irradiation distribution, we have calculated the standard deviation (SD) and contrast ratio (CR) to evaluate the moiré strength. As expected, the SD and CR values decrease with increasing covered area by LDPs. However, there exists a trade-off between the transmittance of the filter and its capability of reducing the moiré intensity in determining the area covered by LDPs.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.497-501
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• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.