• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.1119-1122
• /
• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric in water was simulated. The reactor was made up of the spherical dielectric that is diameter 2.5[mm], ${\epsilon}_r$ : 5, 100, 1000, 5000 respectively and one glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 7[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
• /
• pp.44-47
• /
• 2003

In this paper, the electric field distribution in dielectric tube with one layer and spherical dielectric($ZrO_2$) in water was simulated. The reactor was made up of the spherical dielectric that is diameter : 3.0[mm], $ZrO_2(\varepsilon_r:10)$ and one glass plate of thickness(2[mm]), $\varepsilon_r$(10) as electrode. The discharge gap was 8[mm]. To get more strong electric field, the dielectric constant should be higher comparatively. Using the spherical dielectric for water discharge in dielectric tube, the location of equipotential line was shifting from the interior to the exterior. At real water discharge experimental, ozone was measured higher dissolved ozone in water at condition of water rate(l[l/min]) and injector than condition of non-injector or 2~3[l/min].

• 반도체디스플레이기술학회지
• /
• 제19권4호
• /
• pp.46-50
• /
• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.391-394
• /
• 2003

It is inevitable that reconsideration of the use of lead oxides in the electronics industry be undertaken as long as detrimental effects to the environment remain. To solve this problem, many recent studies on Pb-free compositions for PDP (plasma display panel) dielectric layers and also sealing glass compositions have been made. The present study was conducted to investigate whether the alternative systems for leadfree low firing glasses, detailed below, are available for use in PDP materials. The results suggest that low-melting phosphate glasses would be suitable as an alternative material for the Pb-based dielectric layer, sealants and barrier ribs in PDP.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.65-66
• /
• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• 한국재료학회지
• /
• 제11권4호
• /
• pp.305-311
• /
• 2001

PDP용 투명유전체 재료로 사용되는 $PbO-B_2O_3-SiO_2-Al_2O_3$계의 소성과정 중에서 투명전극 (ITO)과의 반응성 및 광학적, 열적, 전기적 특성을 조사하였다. 본 연구에서 유전체막.두께는 12$\mu\textrm{m}$으로, 온도는 550-58$0^{\circ}C$에서 소성한 후 여러 물성을 평가하였다 그 결과로, 유전체와 투명전극(ITO)의 반용에서, In 이온이 유전체층으로 확산이동하였으며, Sn 확산은 거의 발생하지 않았다. 선팽창계수, 유전상수, 유리전이온도,광 투과율은 유전체 조성의 PbO 양에 큰 영향을 받았다. PbO양 증가는 선팽창계수와 유전상수를 증가시킨 반면, 유리전이온도와 광 투과율온 저하시켰다. $Al_2O_3/B_2O_3$ 비가 증가함에 따라서는 선팽창계수는 감소, 유전상수는 증가, 광 투과율은 감소하였으며, 유리 전이점 변화는 거의 나타나지 않았다.

• 한국재료학회지
• /
• 제14권9호
• /
• pp.670-675
• /
• 2004

Glasses in the $Bi_{2}O_3-SiO_2-ZnO$ glasses system were examined as a potential replacement for lead-oxide glass frits with low firing temperature ($500\sim600^{\circ}C$) for the dielectric layer of a plasma display panel (PDP). The glasses were evaluated for glass transition temperature($T_{g}$) and thermal expansion coefficient(${\alpha}$). After forming transparent thick films by a screen-printing method, it was evaluated for the optical properties. The transmittance of thick films fired at $500-600^{\circ}C$ showed above $80\%$, which was not dependent on the firing temperature. As a result, many pores were observed at samples fired at low temperature, while the number of pores from samples prepared at high temperature decreased and the pores size increased.

• Macromolecular Research
• /
• 제15권2호
• /
• pp.185-190
• /
• 2007

Poly(norbornene dimethyl dicarboxylate)s, (PNDMD)s, were prepared by addition polymerization with palladium(II) catalyst from pure exo-monomers, and their structure and properties were compared with those of poly(norbornene dicarboxylic acid dialkyl ester)s, (PNDADA)s. Both polymer series exhibited good solubility in general organic solvents and excellent thermal stability up to $330^{\circ}C$. Wide-angle X-ray scattering (WAXS) study indicated the presence of nano-scale layer-like order in amorphous PNDADAs, while PNDMDs showed random amorphous structure. The glass transition temperatures and dielectric constants of solid polymers were found to decrease as the alkyl side-chain length increases for both polymer series. However, PNDMDs showed lower glass transition temperatures and higher dielectric constants, as compared with those of PNDADAs containing the same alkyl substituents. This difference, caused by the higher side-group mobility of PNDMDs, may be closely related to the nano-scale order in amorphous PNDADAs and its absence in PNDMDs.

• 한국전기전자재료학회논문지
• /
• 제24권10호
• /
• pp.817-821
• /
• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• 전기학회논문지
• /
• 제64권11호
• /
• pp.1587-1591
• /
• 2015

For a higher definition discharge cell, the method of high speed addressing is necessary. In order to modify the surface charges, the liquefied $TiO_2$ or MgO powder is added on MgO layer in front glass and on the phosphor in rear glass in micro barrier discharge. Both the electro-optical properties and the discharge time lag characteristics are measured from 4 inch. test panel, such as the discharge voltage, current, luminance, luminous efficacy and discharge time lag. As the results, the statistic time lag is improved by about 40 %.