• 한국전기전자재료학회논문지
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• 제28권12호
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• pp.821-825
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• 2015

Anti-reflective (AR) thin film was fabricated on a glass substrate by sol-gel method. The coating solution was synthesized with TEOS (tetraethlyorthosilicate) and poly ethylene glycol (PEG, 4.0 wt%). As the withdrawal speed of coating was changed from 0.1 mm/sec to 0.3 mm/sec, the thickness and refractive index of prepared thin films were changed. The reflectance and transmittance of coating glass fabricated by the withdrawal speed of 0.1 mm/sec were 0.62% and 95.0% in visible light range. The refractive index and thickness of single layer thin film were n= 1.29 and ca. 99.0 nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Bulletin of the Korean Chemical Society
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• 제24권2호
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• pp.183-188
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• 2003

The micro-patterning of multi-layered thin films containing CdS and $Ta_2O_5$ layers on ITO substrate with various structures was successfully obtained by combining three different techniques: chemical solution depositions, sol-gel, and microcontact printing (μCP) methods using octadecyltrichlorosilane (OTS) as the organic thin layer template. $Ta_2O_5$ layer was prepared by sol-gel casting and CdS one obtained by chemical solution deposition, respectively. Parallel and cross patterns of multi-layers with $Ta_2O_5$ and CdS films were fabricated additively by successive removal of OTS layer pre-formed. This study presents the designed architectures consisting of the two types of feature having horizontal dimensions of 170 ㎛ and 340 ㎛ with constant thickness ca. 150 nm of each deposited materials. The thin film lay-out of the cross-patterning is composed of four regions with chemically different layer compositions, which are confirmed by Auger electron microanalysis.

• Applied Science and Convergence Technology
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• 제24권2호
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.

• 한국자기학회지
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• 제9권6호
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• pp.306-311
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• 1999

Water-based sol-gel 법으로 La2/3Sr1/3MnO3(LSMO)/YSZ/SiO2/Si(100) 다결정체 박막을 제조하여 YSZ 중간층 도입에 따른 상온, 120 Oe의 저 자장영역에서 측정한 tunnel-type 자기저항 변화에 미치는 영향에 대하여 고찰하였다. 페롭스카이트 단일상을 갖는 미세한 LSMO 박막을 얻을 수 있었으며, YSZ 중간층을 도입하지 않은 박막의 자기저항 변화비는 최대 약 0.20%이었으나, YSZ 중간층을 도입한 경우 자기저항비가 0.42%로 증가하였다. 이러한 tunnel-type 자기저항의 증가 현상은 YSZ 중간층이 SiO2/Si(100) 기판과 La2/3Sr1/3MnO. 자성박막 사이에서 확산 장벽층으로서의 역할을 수행하여 LSMO 박막의 미세구조 특성 향상 및 확산반응에 의하여 생성된 dead layer를 감소시켜 나타난 결과이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.232-233
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• 2006

In recent years the interest in organic/inorganic hybrid materials has increased at a fast rate. Nano organic-inorganic hybrid composites have shown advantages for preparing hard coating layers. Especially, nano hybrid composite has low environmental pollution. It has high transparency, hardness, toughness, thermal dissociation temperature, hydrophobicity by using nano sized inorganic material. There are many ways in which these materials may be synthesized, a typical one being the use of silica and silanes using the sol-gel process. The structure of sol-gel silica evolves as a result of these successive hydrolysis and condensation reactions and the subsequent drying and curing. The sol-gel reactions are catalyzed by acids and produce silica sol solutions. The silica sol grows until they reach a size where a gel transition occurs and a solid-like gel is formed. Colloidal silica(CS)/silane sol solutions were synthesized in variation with parameters such as different acidity and reaction time. In order to understand their physical and chemical properties, sol-gel coating films were fabricated on glass. From all sol-gel solutions, seasoning effect of sol-gel coating layer on glass was observed.

• 한국지하수토양환경학회:학술대회논문집
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• 한국지하수토양환경학회 2001년도 총회 및 춘계학술발표회
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• pp.66-69
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• 2001

A subsurface containment system which is constructed by pumping a gelling liquid (Colloidal Silica) into the unsaturated medium is investigated by developing a mathematical model and conducting numerical simulations. The proposed model is verified by comparing experimentally and numerically determined hydraulic conductivities of gel-treated soil columns at different Colloidal Silica (CS) injection volumes. The numerical experiments indicate that an impermeable gel layer is formed within the time period twice the gel-point. At the Same normalized time, the CS solutions with lower NaCl concentrations result ill further migration and poor Performance in plugging the pore space.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.69.3-69.3
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• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.814-819
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• 2000

The progress in the field of electronic materials has been especially significant for applications involving a range of electrical properties. Its importance is increasing with the increasing demand for integrated circuits. The sol-gel technique has been used for many years, and the metal alkoxides have featured prominently as source materials. The method consist of making a homogeneous solution of the component metal alkoxides in a suitable solvent, usually the parent alcohol; and then causing the hydrolysis under controlled conditions to produce a gel containing the hydrated metal oxide. The gel is then dried, and fired to produce a ceramic or glassy material at a temperature much lower than that required by the conventional melting process. This project consists of important theoretical considerations, processing techniques and applications related to electrophoresis derived thin films. In the electrophoretic process a metal alkoxide solution is gelled through hydrolysis-polymerization and converted the gel thin layer to an oxide by heating at relatively low temperatures.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.