• Korean Journal of Digital Imaging in Medicine
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• v.6 no.1
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• pp.9-18
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• 2003

디지털 영상 검출기와 디스플레이 기술의 발달과 의료영상전달시스템(PACS)의 출현은 전통적 필름방식에 비하여 디지털 방식으로 방사선과 영상을 획득하고 전송, 저장하는 매우 효과적인 수단을 제공하고 있다. 2002년 8월, 연세의료원 세브란스병원은 진단 영상 판독 목적으로 18 대의 CRT(Braco View, Belgium)와 32대의 평판 LCD(Totoku Electric Co., Ltd., Japan) 디스플레이 장치를 GE full-PACS(GE 메디칼시스템코리아 : GEMSK)와 연계하여 설치 완료하였다. 본 연구에서, 기하학적 왜곡, 반사, 휘도 반응, 휘도 균일도, 분해능, 노이즈,베일링 글레어, 칼라 균일도 항목들을 AAPM TG18 보고서 9.0에 따라서 시각적 그리고 부분적으로는 정량적인 방법으로 인수검사를 실시하여 보고한다. 사용된 장비는 색도계로도 사용되는 간편한 휘도계, TG18 테스트 패던, AAPM Tg18 AT plug-in software(Barco View Ltd., Kortrijk, Belgium)이었다. 칼라 균일도를 제외한 모든 테스트 결과는 AAPM TG18에서 권고하는 기준에 일치하였으며 진단 영상 판독에 사용하기에 전적으로 수락할 수 있는 성능이었다. 결론으로, 사용된 인수검사는 단지 인수 검사 표준을 제공하는 것 뿐만 아니라 품질검사(QC)의 지침, 판독 환경의 최적화 그리고 교체 시기나 업그레이드 시기를 결정하여주는 중요한 역할을 할 수 있을 것이다.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.484-491
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• 2017

Chalcogenide glasses have been investigated in their thermodynamic, structural, and optical properties for application in various opto-electronic devices. In this study, the $Sb_{20}Se_{80-x}Ge_x$ with x = 10, 15, 20, and 25 were selected to investigate the glass stability according to germanium ratios. The thermal, structural, and optical properties of these glasses were measured by differential scanning calorimetry (DSC), X-ray diffraction (XRD), and UV-Vis-IR Spectrophotometry, respectively. The DSC results revealed that $Ge_{20}Sb_{20}Se_{60}$ composition showing the best glass stability theoretically results due to a lower glass transition activation energy of 230 kJ/mol and higher crystallization activation energy of 260 kJ/mol. The structural and optical analyses of annealed thin films were carried out. The XRD analysis reveals obvious results associated with glass stabilities. The values of slope U, derived from optical analysis, offered information on the atomic and electronic configuration in Urbach tails, associated with the glass stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.204-209
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• 2017

Thermal and structural stability in the glass transition region of chalcogenide glasses has been investigated in terms of thermodynamics for application to various optoelectronic devices. In this study, the compositions of $Ge_xSb_{20}Se_{80-x}$ (x = 10, 15, 20, 25, and 30) were selected to investigate the glass stability according to germanium ratios. The chalcogenide bulks were fabricated by using a traditional melt-quenching method. Thin films were deposited by a thermal evaporation system, maintaining the deposition ratio of $3{\sim}5{\AA}$ in order to have uniformity. The thermal and structural properties were measured by a differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The DSC analysis provided thermal parameters and theoretical glass region stabilities. The XRD analysis supported the theoretical stabilities because of where the crystallization peak data occurred.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.136-136
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• 2010

$Ge_2Sb_2Te_5$ (GST)는 광학 스토리지 및 PRAM(Phase-change Random Access Memory)에 적용 가능한 대표적인 상변화 물질이며 상변화 거동에 대한 다양한 연구가 진행되고 있다. 차세대 비휘발성 메모리로 각광을 받고 있는 PRAM의 경우 저전력 그러나 향후 고집적, 고성능 PRAM 소자구현을 위해서는 Reset 전류 감소를 통한 소비 전력 감소, 인접 셀간의 'cross talking'을 방지할 수 있는 열적 안정성 개선 등의 문제점들을 해결해야 한다. GST 물질의 전기적, 열적 특성을 조절하여 이러한 문제를 해결하기 위하여 GST 물질에 이종의 원소를 첨가하는 연구가 활발히 진행되고 있으며, 특히 질소 첨가에 의해 결정 성장 억제를 통한 결정화 온도 증가, 결정질의 저항 증가 등의 보고가 있었다. 본 연구에서는 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ (NGST) 박막의 상변화 거동을 규명하고 GST 박막과 비교하여 첨가된 질소의 영향을 분석하고자 한다. D.C Magnetron sputtering 방법으로 증착된 GST와 NGST 박막을 등온으로 유지하여 각 온도별로 열처리 시간 증가에 따른 비저항을 실시간으로 측정하여 GST와 NGST 박막의 상분율을 계산하고 Kissinger 모델을 이용하여 effective activation energy ($E_a$)를 구하였다. GST와 NGST 박막의 $E_a$는 각각 $2.08\;{\pm}\;0.11\;eV$와 $2.66\;{\pm}\;0.12\;eV$로 계산되었다. 따라서 첨가된 질소에 의해 NGST 박막의 결정화를 위하여 GST 박막의 경우보다 더 큰 활성화 에너지가 필요하다.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.06a
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• pp.22-22
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.53-54
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.194-195
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• 2001

• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.130-131
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• 2005