Structural Analysis of N-doped $Ge_2Sb_2Te_5$ Material for Phase Change Memory by Transmission Electron Microscopy

  • 박주철 (삼성종합기술원 Analytical Engineering Center) ;
  • 박종봉 (삼성종합기술원 Analytical Engineering Center) ;
  • 이장호 (삼성종합기술원 Analytical Engineering Center) ;
  • 박경수 (삼성종합기술원 Analytical Engineering Center) ;
  • 호리이 (삼성전자 Memory Division) ;
  • 박순오 (삼성전자 Memory Division) ;
  • 고관협 (삼성전자 Memory Division) ;
  • 정홍식 (삼성전자 Memory Division)
  • Published : 2005.05.01