• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.237-240
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• 2006

The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.244-250
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• 1994

This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

• Journal of Navigation and Port Research
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• v.30 no.4
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• pp.277-283
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• 2006

It is a world trend to construct large terminal and develop automated container terminal to attract Super Post-Panamax and provide service which is based on differentiation. In fact, there is insufficient research for automatization of terminal gate since the automatization of current constructed container terminal is only focused on increasing productivity and unmanned system through the automatization of quay, yard, etc. In this paper, we have investigated advantage/disadvantage of existing gate operation systems and compared each gate operation system in the aspect of raising terminal image and the productivity. For the specific study, we have used data from actual terminal gate operation and RFID model business sponsored by MOMAF (Ministry of Maritime Affairs and Fisheries). As a result, this paper carried out an efficient gate operation system and it has been expected that it will be performed as groundwork of automated gate operation system which is for design of container terminal and improvement of gate operation system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• International journal of advanced smart convergence
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• v.5 no.3
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• pp.66-71
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• 2016

Smart building gate security control system using smartphone integrated with near field communication (NFC) has become part of daily life usage these days. The technology change in replacing RF NFC device using visible light communication technology based approach growing faster in recent days. This paper propose a design and development of gate security control system using color code based user authentication ID generation as part of an intelligent access control system to control automatic door open and close. In this approach gate security access control use the recent visible light communication technology trends to transfer the user specific authentication code to door access control system using color code on smartphone screen. Using a camera in the door access control system (ACS), color codes on smartphone screens are detected and matched to the database of authenticated user to open the door automatically in gate security system. We measure the visual light communication technology efficiency as a part of the research and the experiments have revealed that more than 95% users authenticated correctly at the suggested experiment environment on gate security control system.

• International Journal of Precision Engineering and Manufacturing
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• v.4 no.2
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• pp.39-48
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• 2003

In the Semi-Solid Diecasters design, a Seni-Solid Diecasters experiment has usually been carried out before producing new casts. At the Semi-Solid Diecasting stages, the runner-gate part has been always repeatedly corrected, which leads to a tedious processing time and high processing cost. Much experience is essential in manual assessment and if the design is defective, much time and a great deal of efforts will be wasted in the modification of the die. In this study, a design system has been developed based on the design database In addition, a gate experiment for the gating system design has been tarried out to append the database. It is possible for engineers to make efficient gating system design of Semi-Solid Diecasting and it will result in the reduction of expenses and time to be required.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.36 no.4
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• pp.71-76
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• 2013

For a die casting mold, generally, the casting layout design should be considered based on the relation among injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects was differentiated according to the various relations of the above conditions. In this research, in order to optimize the casting layout design of an automotive Oil Pan_DX2E, Computer Aided Engineering (CAE) simulation was performed with two layout designs by using the simulation software (AnyCasting). The simulation results were analyzed and compared carefully in order to apply them into the production die-casting mold. During the filling process with two models, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflow. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1305-1308
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• 2008

In this study, we redesigned the reliable integrated on-panel display gate driver that was equipped with dual pull-down as well as controlled discharge-path structure to reduce the high voltage stress effect and realized with TSMC 0.35 um CMOS-based technology before. An improved discharge path and a low noise design are proposed for our new a-Si TFT process implementation. Our novel reliable gate driver design can make each cell of shift register to be insensitive to the coupling noise of that stage.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.26 no.3
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• pp.299-305
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• 2017

Gate-lifting devices in small- to mid-sized sluice gates mostly employ the mechanical roller rack pinion (RRP) system. This RRP system, which consists of a rack-bar and a pinion, transforms a rotation motion into a linear one. The rack-bar has a series of roller trains that mesh with the pinion. In this study, we adopt an exact involute-trochoid tooth profile of the pinion to obtain a higher contact fatigue strength using the profile modification coefficient. Further, we determine the contact forces and investigate Hertz contact stresses to predict the pitting life of the pinion according to varying the shape design parameters. The results indicate that the design fatigue life of an RRP system for sluice gate can be achieved only when the design value of the profile modification coefficient reaches or exceeds a certain level.