• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.2
• /
• pp.63-66
• /
• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Design & Manufacturing
• /
• v.15 no.1
• /
• pp.1-7
• /
• 2021

The position of the gate is one of the important factors for optimal injection molding. This is because inappropriate gate positions cannot fill the cavity uniformly, which can lead to defects such as contraction. In this study, CAE was performed on hot runner injection molding of the washing machine base and plasticity was compared by changing gate position from existing gate position. A total of two alternatives have been applied to compare the plasticity of the washing machine base according to its optimal gate position. The gate position of the improved molds and the gate position of the current mold is analyzed by injection molding analysis. The results of the fill time, the pressure at V/P switchover, clamping force, and deflection were compared. In washing machine base injection molding, the deflection was reduced by about 3.76% in the improved mold 2. In improved mold 1, the fill time during injection molding was reduced by 3.32% to enable uniform charging, and the clamping force was reduced by 31.24%. We have confirmed that the position of the gate can change the charging pressure and the clamping force and affect the quality and cost savings of the molded product.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2002.11a
• /
• pp.490-493
• /
• 2002

In this study, we have investigated optimum value for side gate length and side gate voltage of double gate (DG) MOSFET with main gate and side gate. We know that optimum side gate voltage for each side length is about 3V. Also, we know that optimum side gate length for each main gate length is about 70nm. We have presented the transconductance and subthreshold slope for each side gate length. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Journal of Korean Society for Quality Management
• /
• v.42 no.3
• /
• pp.279-290
• /
• 2014

Purpose: The purpose of this study is to propose adoption of QFD and Stage-gate in order to analyze the quality of korea defense system. Methods: Drawing change data of initial production phase in korea defense system were anlayzed and a practical method was proposed. Results: The results of this study are as follows; Off line Quality Control should be introduced in development phase. Specially, in case of defense system, the best method is QFD(Quality Function Deployment) and Stage-gate process. At first, QFD 1 step defines product planning from VOC(Voice Of Customer), QFD 2 step specifies part planning from product planning, QFD 3 step defines process planning from part planning, QFD 4 step defines production planning from previous process planning. Secondly, Stage-gate process is adopted. This study is proposed 5 stage-gate in case of korea defense development. Gate 1 is located after SFR(System Function Review), Gate 2 is located after PDR(Preliminary Design Review), Gate 3 is located after CDR(Critical Design Review), Gate 4 is located after TRR(Test Readiness Review) and Gate 5 is located before specification documentation submission. Conclusion: Off line QC(Quality Control) in development phase is necessary prior to on line QC(Quality Control) in p roduction phase. For the purpose of off line quality control, QFD(Quality Function Deployment) and Stage-gate process can be adopted.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.7
• /
• pp.1-6
• /
• 2002

For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

• Journal of Korean Society of Industrial and Systems Engineering
• /
• v.43 no.2
• /
• pp.65-71
• /
• 2020

Worldwide plant market keeps maintaining steady growth rate and along with this trend, domestic plant market and its contractors also maintain such growing tendency. However, in spite of its external growth, win-win growth of domestic material industry that occupies the biggest share in plant industry cost portion is extremely marginal in reality. Domestic plant material suppliers are required to increase awareness of domestic material brand by securing quality and reliability of international standard through improvement of design quality superior to that of overseas material suppliers. Improvement of design quality of plant material becomes an essential element, not an option, for survival of domestic plant industry and its suppliers. Under this background, in this study, priority and importance by each evaluation index was analyzed by materializing plant design stage through survey of experts and defining evaluation index by each design stage and based on this analysis result, evaluation index of stage-gate based decision-making process that may improve design quality of plant material was suggested. It is considered that by utilizing evaluation index of stage-gate based decision-making process being suggested in this study, effective and efficient decision-making of project decision-makers would be enabled and it would be contributory to improve design quality of plant material.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
• /
• 2006.05a
• /
• pp.1044-1048
• /
• 2006

Nuclear power generation is very dangerous in occasion that skirt of structure by earthquake although it is high effective generation that can make a lot of energies with few raw material. when design, it must consider a lot of problems caused by an earthquake. The seismic analysis of the structure has been great concern in the engineering society with an effort to reduce the severe damages from an earthquake. So the earthquake resistant design is one of the crucial design procedures of a gate valve used in nuclear power generation. The gate valve which has the contact area between stem and bellows. Because of the contact area. The gate valve should be given high stress and frictional wear. In this thesis, Considering the gate valve which has some contact distance between stem and bellows. The gate valve which has some contact distance is analyzed by a commercial FEM code of Ansys and Then compared to the gate valve behavior which doesn't have contact distance.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 1999.10a
• /
• pp.87-92
• /
• 1999

The biggest challenge facing today manufacturing industry is better quality and high productivity. From an economic point of view, productivity is the most important parameter, as high productivity will reduce the cost. However, the customers of today are not only cost concerned, but also quality conscious. So high accuracy levels should also be achieved in the manufacturing process. This paper reports the development of a automatic design system based on AutoCAD program. This work is composed of three section that are design of top down menu, guide frame and gate lifter for water-gate programed by AutoLISP language and runned Windows system. The developed system ultimately generates the design for a water gate through AutoCAD program. In the design of the water gate, it needs about 23 hours with an expert, but this system can be only 80 seconds without an expert.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.4 no.1
• /
• pp.27-31
• /
• 2004

Models and simulations of gate tunneling current for thinoxide MOSFETs and Double-Gate SOIs are discussed. A guideline in design of leaky MOS capacitors is proposed and resonant gate tunneling current in DG SOI simulated based on quantum-mechanicalmodels. Gate tunneling current in fully-depleted, double-gate SOI MOSFETs is characterized based on quantum-mechanical principles. The simulated $I_G-V_G$ of double-gate SOI has negative differential resistance like that of the resonant tunnel diodes.

• Journal of the Korean Society of Marine Environment & Safety
• /
• v.14 no.4
• /
• pp.325-331
• /
• 2008

Recently, new shipbuilding yards with medium capacity are established due to influence of prosperous condition no shipbuilding industry in Korea. These shipbuilding yards have characteristics such as high capacity facilities and followed system of dock launching just like major shipbuilding yards. The present paper explains the dry dock design and structural strength analysis by using FEM. The design stage used TRIBON M3 system while the estimation of structural strength used ANSYS Multiphysics module. The dry dock gate did not frequently open and close, it had to sustain against external wave load during building a ship. Moreover, documents related to design of dry dock gate have no guidelines about design criterion and process of structural strength calculation. It is necessary to make the guidelines about design of dry dock gate. It is expected that this paper will be a good reference to the design of dry dock gate.