• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.11
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• pp.2285-2291
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• 2011

In this paper, H.264 high profile intra frame encoder, which integrates intra prediction, context-based adaptive variable length coding(CAVLC), and DDR2 memory control module, is proposed. The designed encoder can be operated in 440 cycle for one-macroblock. In order to verify the encoder function, we developed the reference C from JM 13.2 and verified the developed hardware using test vector generated by reference C. The designed encoder is verified in the FPGA (field programmable gate array) with operating frequency of 200 MHz for DMA (direct memory access), operating frequency of 50 MHz of Encoder module, and 25 MHz for VIM(video input module). The number of LUT is 43099, which is about 20 % of Virtex 5 XC5VLX330.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.379-382
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of $0.3 cm^2/V.sec$ and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$ and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of $0.3Cd/m^2$.

• Design & Manufacturing
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• v.2 no.5
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• pp.5-10
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• 2008

Recently, ultra precision and light-weight micro products are needed in various industries. Injection molding products with metal insert material is often satisfied with light-weight and precision simultaneously. The researches on macro-size insert deformation have been performed but, a research on micro-size insert is meager. In this paper, the injection molding product with $300{\mu}m$ thin foil insert is designed and insert injection molding process is performed. Finally, the deformation of thin foil insert is analyzed according to insert feature and gate length.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1034-1037
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• 2004

In this paper we fabricated a test panel for AMOLED on glass and PET substrate. The test panel consisted of the various size of OTFTs and OLEDs and the current driving capability of OTFTs for OLEDs has been investigated. OTFTs were made of the inverted staggered structure and employed polyvinylphenol (PVP) as the gate insulator and pentacene thin film as the active layer. The OTFTs produced the filed effect mobility of 0.3$cm^2$/V.sec and on/off current ratio of $10^5$. OLEDs consisted of TPD for HTL and Alq3 for EML with 35nm thick, generating green monochrome light. We found that OTFT with channel length of 70${\mu}m$and channel width of over 3.5mm provided the sufficient current to OLED to generate the luminescence of 0.3Cd/$m^2$.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Transactions of the Korean Society of Mechanical Engineers
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• v.3 no.4
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• pp.151-157
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• 1979

An experomental study on drg reduction in the rough tubes is presunted using the drrective drag reducing proymer solutions. The friction factors of the rough tubes follow the maximum drag reduction asymptote for the lower Reynolds numbers in the turbulent flow. However, as the Reynols number is increased the rougher tube results deviate from the maximum drag rduction asymptote sooner than the less rough tube results. There appears a systematic deviation from the maximum drag reduction asymptote depending on the relative roughness just as friction factors for the Newtonian hluid inthe rough tubes exhibit in the turbulent region. The minor loss results inthe various fittings such as elbows, tees, and gate valves are presunted The fittings show higher values of the loss coefficient in the drag reducing polymer solutions than in the Newtonian fluid, which is quite contrary to the drag reduction phenomenon in the straight tubes. The eqivalent length of the fittings for the drag reducing polymer solutions is many times longer than that for Newtonian fluids due to the increase of the loss coefficient and the decrease of the friction factor. It is speculated that the solid-like behavior of the polymer solutions in the abruptly changing folw passage plays a significant role in increasing the loss coefficient.

• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.146-146
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• 2010

Electrical properties of Large-grain-size TIT with 7/7 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$. was fabricated and measured with Large-grain-size technic(MICC) and compared to ELA technic's data. The field-effect mobility was decreased from 106.78 to $88.74\;cm^2$/Vs and threshold voltage also decreased from -1.8382 to -0.9529 V, when TFT process is changed from ELA technic to MICC technic. Subthreshold swing, also, increased from 0.22 to 0.32 V/dec and $I_{on/off}$ ratio decreased from $1.12{\times}10^8$ to $5.75{\times}10^7$.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1062-1065
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• 2002

We demonstrate the MMIC(monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 ㎓ local oscillator signals from 14.5 ㎓ input signals. These devices were designed and fabricated by using the MMIC integration process of 0.1 $\mu\textrm{m}$ gate-length PHEMTs (pseudomorphic high electron mobility transistors). The measurements showed S$\_$11/ of -9.2 dB at 14.5 ㎓, S/sub22/ of -18.6 dB at 29 ㎓ and a minimum conversion loss of 18.2 dB at 14.5 ㎓ with an input power of 6 dBm. The fundamental signal of 14.5㎓ was suppressed below 15.2 dBc compared with the second harmonic signal at the output port, and the isolation characteristics of the fundamental signal between the input and the output port were maintained above 30 dB in the frequency range of 10.5 ㎓ to 18.5 ㎓.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.622-634
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• 2013

The circuit level implementation of nanoscale Insulated Shallow Extension Silicon On Nothing (ISE-SON) MOSFET has been investigated and compared with the other conventional devices i.e. Insulated Shallow Extension (ISE) and Silicon On Nothing (SON) using the ATLAS 3D device simulator. It can be observed that ISE-SON based inverter shows better performance in terms of Voltage Transfer Characteristics, noise margin, switching current, inverter gain and propagation delay. The reliability issues of the various devices in terms of supply voltage, temperature and channel length variation has also been studied in the present work. Logic circuits (such as NAND and NOR gate) and ring oscillator are also implemented using different architectures to illustrate the capabilities of ISE-SON architecture for high speed logic circuits as compared to other devices. Results also illustrates that ISE-SON is much more temperature resistant than SON and ISE MOSFET. Hence, ISE-SON enables more aggressive device scaling for low-voltage applications.