• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.162-163
• /
• 2007

본 논문에서는 600V/200A 또는 1200V/150A와 같은 고 전력 절연 게이트 소자를 구동 및 보호하기 위한 파워 IC에 대한 연구에 대해서 살펴보았다. 고 전력 소자의 구동을 위해서 최대 Sourcing 전류 4A, 최대 Sinking 전류 8A로 설계하였으며, 과전류 보호회로로는 전력소자의 Desaturation을 검출하는 방식을 사용하였다. 또한 과전류 보호시 발생할 수 있는 과전압을 억제하기 위해서 Soft turn-off 기능을 추가하였다. 동부하이텍의 고전압 BCDMOS 공정인 0.35um BDA350 공정과 PDK를 사용하여 설계 및 제작하였다.

• Proceedings of the KIEE Conference
• /
• 2006.07d
• /
• pp.2061-2062
• /
• 2006

a-Si(amorphous silicon) TFT(thin film transistor)는 TFT-LCD(liquid crystal display)의 화소 스위칭(switching) 소자로 폭넓게 이용되고 있다. 현재는 a-Si을 이용하여 gate drive IC를 기판에 집적하는 ASG(amorphous silicon gate) 기술이 연구, 적용되고 있는데 이때 가장 큰 제약은 문턱 전압(Vth)의 이동이다. 특히 고온에서는 문턱 전압의(Vth) 이동이 가속화 되고, Ioff current가 증가 하게 되고, 저온($0^{\circ}C$)에서는 전류 구동능력이 상온($25^{\circ}C$) 상태에서 같은 게이트 전압(Vg)에 대해서 50% 수준으로 감소하게 된다. 특히 ASG 회로는 여러 개의 TFT로 구성되는데, 각각의 TFT가 고온에서 Vth shift 값이 다르게 되어 설계시 예상하지 못 한 고온에서의 화면 무너짐 현상 즉 고온 노이즈 불량이 발생 할 수 있다. 고온 노이즈 불량은 고온에서의 각 TFT의 문턱전압 및 $I_D-V_G$ 특성을 측정한 결과 고온 노이즈 불량에 영향을 주는 인자가 TFT의 width와 기생 capacitor비 hold TFT width가 영향을 주는 것으로 실험 및 시뮬레이션 결과 확인이 되었다. 발생 mechanism은 ASG 회로는 AC 구동을 하기 때문에 Voff 전위에 ripple이 발생 되는데 특히 고온에서 ripple이 크게 증가 하여 출력 signal에 영향을 주어 불량이 발생하는 것을 규명하였다.

• Proceedings of the KIPE Conference
• /
• 2014.07a
• /
• pp.161-162
• /
• 2014

본 논문에서는 스탠바이 컨버터를 가지는 전력 변환 시스템에서 경부하 효율을 높일 수 있는 새로운 게이트 구동기법을 제안한다. 제안 방법은 스탠바이 컨버터의 보조 출력 전압을 조절하여 전력 MOSFET의 구동 전압 및 제어기 IC의 동작 전압을 경부하 조건에서 낮춘다. 따라서, MOSFET의 게이트 구동 손실과 제어기 IC의 손실을 크게 줄일 수 있다. 본 논문에서는 48V 입력전압 및 12V 출력전압/60A 출력전류의 주전원단 및 5V/3A의 출력의 스탠바이 전원단을 포함한 DC/DC 서버용 전원 장치를 실험하여 타당성을 검증하였다.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
• /
• v.11B no.3
• /
• pp.112-118
• /
• 2001

In the near future, the voltage of power system for passenger vehicle will be changed to 42V from existing 14V./ Because of increasing power and voltage ratings used in the vehicle the motor drive system has high switching dv/dt and it generates electromagnetic interference (EMI) To solve these problems multi-level inverter system may be used The feature of multi-level inverter is the output voltage to be synthesized from several levels of voltage Because of this feature high switching dv/dt and EMI can be reduced in the multi-level inverter system But as the number of level is increased manufacturing cost is getting expensive and system size is getting large. Because of these disadvantages the application of multi-level inverter has been restricted only to high power drives. The method to reduce manufacturing cost and system size is to integrate circuit of multi-level inverter into a few chips But isolated power supply and signal isolation circuit using transformer or opto-coupler for drive circuit are obstacles to implement the integrated circuit (IC) In this paper a drive circuit of 4-level inverter suitable for integration to hybrid or one chip is proposed In the proposed drive circuit DC link voltage is used directly as the power source of each gate drive circuit NPN transistors and PNP transistors are used to isolate to transfer the control signals. So the proposed drive circuit needs no transformers and opto-couplers for electrical isolation of drive circuit and is constructed only using components to be implemented on a silicon wafer With th e proposed drive circuit 4- level inverter system will be possible to be implemented through integrated circuit technology Using the proposed drive circuit 4- level inverter system is constructed and the validity and characteristics of the proposed drive circuit are proved through the experiments.

• Journal of Internet of Things and Convergence
• /
• v.6 no.1
• /
• pp.97-102
• /
• 2020

Multi-Channel Switch ICs for IoT have integrated several solid state structure low ON-resistance bi-directional relay MOS switches with level shifter to drive high voltage and they should be independently controlled by external serialized logic control. These devices are designed for using in applications requiring high-voltage switching control by low-voltage control signals, such as medical ultra-sound imaging, ink-jet printer control, bare board open/short and leakage test system using Kelvin 4-terminal measurement method. This paper describes implementation of analog switch control block and its verification using Field programmable Gate Array (FPGA) test pattern generation. Each block has been implemented using Verilog hardware description language then simulated by Modelsim and prototyped in a FPGA board. Compare to conventional IC, The proposed architecture can be applied to fields where multiple entities need to be controlled simultaneously in the IoT environment and the proposed pattern generation method can be applied to test similar types of ICs.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.609-610
• /
• 2006

A 77GHz MMIC transceiver module consisting of a power amplifier, a low noise amplifier, a drive amplifier, a frequency doubler and a down-mixer has been developed for automotive forward-looking radar sensor. The MMIC chip set was fabricated using $0.15{\mu}m$ gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20dB from $76{\sim}77GHz$ with 15.5dBm output power. The chip size is $2mm{\times}2mm$. The low noise amplifier achieved a gain of 20dB in a band between $76{\sim}77\;GHz$ with an output power of 10dBm. The chip size is $2.2mm{\times}2mm$. The driver amplifier exhibited a gain of 23dB over a $76{\sim}77\;GHz$ band with an output power of 13dBm. The chip size is $2.1mm{\times}2mm$. The frequency doubler achieved an output power of -16dBm at 76.5GHz with a conversion gain of -16dB for an input power of 10dBm and a 38.25GHz input frequency. The chip size is $1.2mm{\times}1.2mm$. The down-mixer demonstrated a measured conversion gain of over -9dB. The chip size is $1.3mm{\times}1.9mm$. The transceiver module achieved an output power of 10dBm in a band between $76{\sim}77GHz$ with a receiver P1dB of -28dBm. The module size is $8{\times}9.5{\times}2.4mm^3$. This MMIC transceiver module is suitable for the 77GHz automotive radar systems and related applications in W-band.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.18 no.3
• /
• pp.48-54
• /
• 2004

We have developed a new experimental driving system in order to make an easier drive experiment of PDP. By using the system, we can design and simulate the timing of the pulse in computer environment. As a result of the designed timing, we are able to program at PLD(Programmable Logic Device) and control high-voltage FET switches. The new system can reduce the time of the pulse compared with the previous logic gate ICs that realizes switching logic through hardware. In addition, it is a much easier way of changing the timing of the pulse due to the change of the driving method. By using the developed driving system we experimented on two different things- First, the realization of ADS Driving Method that run commonly; Second, gray scale realization on the three electrodes AC PDP.

• Journal of the Korea Society of Computer and Information
• /
• v.12 no.4
• /
• pp.249-256
• /
• 2007

AIn this paper, a new desist of LDI controller IC for general purpose is proposed for driving the LDI(LCD Driver Interface) controller in $4{\sim}9$ inches sized portable small-medium TFT-LCD(Thin Film Transistor addressed -Liquid Crystal Display) panel module. The designed LDI controller was verified on the FPGA(Reld Programmable Gate Array) test board, and was made the interactive operation with the commercial TFT-LCD panel successfully. The purpose of design is that it is standardized the LDI controller's operation by one LDI controller for driving all TFT-LCD panel without classifying the panel vendor, and size. The main advantage for new general-purpose LDI controller is the usage for the desist of all panel's SoG(System on a Glass) module because of the design for the standard operation. And in the previous method, it used each LDI controller for every LCD vendor, and panel size, but because a new one can drive all portable small-medium sized panel, it results in reduction of LDI controller supply price, and manufacturing cost of AV(Audio Video) board and panel. In the near future, the development of SoG IC(Integrated Circuit) for manufacturing more excellent functional TFT-LCD panel module is necessary. As a result of this research, the TFT-LCD panel can make more small size, and light weight, and it results in an upturn of domestic company's share in the world market. With the suggested theory in this paper, it expects to be made use of a basic data for developing and manufacturing for the SoG chip of TFT-LCD panel module.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.8
• /
• pp.486-489
• /
• 2015

Power semiconductor device has a very long history among semiconductor, since the invention of low-pressure bipolar transistor 1947, and so far from small capacity to withstand voltage-current, high-speed and high-frequency characteristics have been developed with high function. In this study, the PWM IC Switch to the main parts used in IGBT (insulated gate bipolar transistor) for the low power loss and high drive capability of the simulator to Synopsys' T-CAD used by the 1,700 V NPT Planar IGBT, 1,700 V FS was a study of the Planar IGBT, the results confirmed that IGBT 1,700 V FS Planar is making about 11 percent less than the first designed NPT Planar IGBT.