• Preventive Nutrition and Food Science
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• v.16 no.3
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• pp.267-271
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• 2011

Static Headspace Gas Chromatographic analysis was used to study the partitioning behavior of five organic printing ink solvents between chocolate cookie/air systems. Three cookie sample formulations varied with respect to chocolate type and overall percentage of constituents. Major considerations involved differences in fat content and type and resulting variability in chemical and physical structure. Each of the solvents studied (ethyl acetate, hexane, isopropanol, methyl ethyl ketone, toluene) represents a general class of printing ink solvents based on predominate functional group. Values of the partitioning coefficient (Kp) were determined at equilibrium using measured quantities of both solvent and cookie sample in closed systems at temperature of 25, 35, and $45^{\circ}C$. In each of the three cookies at the three test temperatures, toluene always exhibited the greatest value of partitioning to cookie and hexane always exhibited the least. Results also showed that the partitioning behavior of solvents is generally inversely related to temperature and that solvent affinity, though constant for a particular cookie type over all test temperatures, varies significantly among the three cookie types. The preference of each of the five solvents for each cookie sample was also found to vary with temperature. No correlation was found between the extent of partitioning and cookie formulation or physical characteristic of solvent. The Hildebrand parameter, related to ${\Delta}Hmix$ (heat of mixing), may be used to describe differences in partitioning based on the overall potential of a solvent/cookie interaction to occur. The potential for interaction is dependent upon the chemical structure of the cookie sample and thus the availability of 'active-sites' required for a given solvent.

• Journal of The Korean Association For Science Education
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• v.31 no.6
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• pp.1009-1024
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• 2011

Previous studies showed that many secondary school students and teachers have difficulties in distinguishing the phenomena of dissolution and diffusion, as well as the phenomena of diffusion and effusion. In this study, currently accepted term definitions of dissolution, diffusion and effusion were searched from the IUPAC Gold Book and the physical chemistry textbooks, and the points to differentiate the definitions were sought. Also, the term definitions of these three phenomena in the secondary school text books and the college general chemistry textbooks were surveyed and compared to the currently accepted definitions. It was found that dissolution is formation of one new phase from mixing two phases, while diffusion is the migration of matter down from the concentration gradient. The "concentration gradient" is considered to be a key point to distinguish diffusion from the dissolution. However, the concentration gradient was not mentioned in the definitions of diffusion in most of the secondary school textbooks and the college general chemistry textbooks. Effusion is differentiated from diffusion by the gas molecules escaping from the container through a tiny hole without collision. The definition of effusion was not found in most of the secondary school textbooks.

• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.187-194
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• 1989

Synthesis of spinel pigment on ZnO-Fe2O3 system. The object of this research is the synthesis of new spinel pigments on the basic of ZnO-Fe2O3 system which was substituted by ZnO-Fe2O3 by MgO-Al2O3. This research was progressed by measuring the X-ray diffraction and the reflectances of the substitued ZnO-Fe2O3 group. Which was obtained by sintering at the temperature of 1,00$0^{\circ}C$, 1,10$0^{\circ}C$, 1,20$0^{\circ}C$ and 1,25$0^{\circ}C$ and them by regrinding. In order to coloring test, here basic compositions of Barium glaze, Zinc glaze, Lime glaze, Lead glaze and Talc glaze used in this experiment are obtained from the ceramic work. Adding synthetic stains in these basic glazes with 3%, mixing and glazing on the specimen. The specimens was fired at 1,28$0^{\circ}C$ in reducing and oxidizing atmosphere in the gas kiln. The results of the research as follow. 1. Many kinds of spinel pigment was produced on ZnO-Fe2O3 system that is to say, not always only spinel. 2. Spinel peak was observed strongly on the ZnO-Fe2O3 system withsubstituting by MgO-Fe2O3 and MgO-Al2O3 group(the ratio of MgO, Al2O3 being increased, observed more strongly). 3. The most effective temperature ranges was 1,20$0^{\circ}C$~1,25$0^{\circ}C$. 4. The color of spinel pigments on this system was observed by "stable YR". 5. It was yellow red in oxidizing and green in reducing atmosphere on the coloring test.ring test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.223-226
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• 2004

The PZT thin films are one of well-known materials that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_{4}/(Cl_{2}+Ar)$ plasma and investigated improvement in etching damage by $O_{2}$ annealing. The maximum etch rate of the PZT thin films was 157 nrn/min and that the selectivity of the PZT thin films to Pt was 3.1 when $CF_{4}(30{\%})$ was added to a $Cl_{2}(80{\%})/Ar(20{\%})$ gas mixing ratio. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_{2}$ atmosphere. After $O_{2}$ annealing, the remanent polarization of the asdeposited films was $34.6{\mu}/cm^{2}$ and the sample annealed at 650, 550, and $450^{\circ}C$ was 32.8, 22.3, and $18.6{\mu}/cm^{2}$, respectively. PZT thin films with $O_{2}$ annealing at $450^{\circ}C$ retained $77{\%}$ of their original polarization at 106 cycles. Also as the annealing temperature increased, the fatigue properties improved. And the leakage current was decreased gradually and almost recovered to the as-deposited value after the annealing at $450^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.6
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• pp.11-18
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• 2014

The combustion flowfield at the near-injector region of a 50 N scale $N_2O/C_2H_5OH$ thruster was visualized using shadowgraph technique. The explosive ignition was occurred at the design spray condition, and the expanding combustion gas quenched the flame immediately. Approximately after 83 ms from the initial ignition, the propellant spray was re-ignited, and the flame was stabilized after 23 ms elapsed. In the increased oxidizer flow rate condition, the transient pressure at the moment of ignition was smoother than explosive ignition, and the blow down phenomenon was not appeared in the same operating sequence. In addition, the flame was stabilized within 17 ms, and it is caused by improved propellants mixing before ignition.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.33-37
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• 2013

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IZO thin films for the organic light emitting diodes (OLED) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 0.9sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $H_2$ flow rate. The electrical resistivity of IZO film decreased with increasing flow rate of $H_2$ under Ar+$H_2$. The change of electrical resistivity with increasing flow rate of $H_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility and the charge carrier concentration. All the films showed the average transmittance over 83% in the visible range.

• Journal of the Semiconductor & Display Technology
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• v.10 no.2
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• pp.39-44
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• 2011

In this study, we have investigated the structural and electrical characteristics of IZO thin films deposited on flexible substrate for the OLED (organic light emitting diodes) devices. For this purpose, PES was used for flexible substrate and IZO thin films were deposited by RF magnetron sputtering under oxygen ambient gases (Ar, $Ar+O_2$) at room temperature. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. All the samples show amorphous structure regardless of flow rate. The electrical resistivity of IZO films increased with increasing flow rate of $O_2$ under $Ar+O_2$. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO electrodes made by configuration of IZO/a-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of IZO substrate. OLED devices with the amorphous-IZO (a-IZO) anode film show better current density-voltage-luminance characteristics than that of OLED devices with the commercial crystalline-ITO (c-ITO) anode film. It can be explained that very flat surface roughness and high work function of a-IZO anode film lead to more efficient hole injection by reduction of interface barrier height between anode and organic layers. This suggests that a-IZO film is a promising anode materials substituting conventional c-ITO anode in OLED devices.

• Journal of Hydrogen and New Energy
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• v.23 no.5
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• pp.530-537
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• 2012

This work experimentally investigates that Diesel-DME blended fuel influences combustion characteristics and emissions (NOx, CO, HC, smoke) in a single-cylinder DI diesel engine. Diesel is used as a main fuel and DME is blended for the use of its quick evaporating characteristics. Diesel and DME are blended by the method of weight ratio. Weight ratios for Diesel and DME are 95:5 and 90:10 respectively and the both ratios have been used altogether in blended fuel. The experiments are conducted in this study single cylinder engine is equipped with common rail and injection pressure is 700 bar at 1200 rpm. The amount of injected fuels is adjusted to obtain the fixed input calorie value as 972.2 J/cycle in order to compare with the fuel conditions. DME is compressed to 15 bar by using nitrogen gas thus it can be maintained the liquid phase. In this study, different system compared others paper is common rail system, also there is combustion and emission about compared DME and diesel fuel. It is expected to be utilized about blended fuel.