• Journal of Radiation Protection and Research
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• 제21권1호
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• pp.27-39
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• 1996

DUPIC핵연료주기로 인해 변화되는 경수로 사용 후 핵연료 물질의 핵종별 농도, 방사능, 붕괴열, 위해지수 및 방사선원항등을 시간의 함수로 그 변화특성을 분석하고, 각 인자별로 크게 영향을 미치는 주요핵종의 거동을 물질농도 측면에서 추적 분석평가하였다. 방사성물질 농도에 있어서 연소도 19,000 MWD/MTU의 사용 후 DUPIC핵연료에 존재하는 악티나이드 양은 연소도 35,000 MWD/MTU의 경수로 사용후 핵연료에 비해 약 2% 감소한 반면 핵분열생성물의 양은 약 20% 증가된 것으로 나타났다. 그리고 사용 후 DUPIC핵연료의 방사능 및 붕괴열은 일반적인 사용후핵연료 특성과는 달리, 방사성물질 농도 변화와 비례하지 않는 것으로 나타났다. 사용후 DUPIC핵연료가 갖는 감마 스펙트럼을 경수로핵연료의 경우와 비교해 볼 때, 전체적인 특징은 사용후 DUPIC핵연료의 경우가 $0.01{\sim}0.575MeV$의 낮은 에너지 범위에서는 경수로핵연료 보다 약 $40{\sim}50%$ 낮은 감마선 세기를 보여주고 있으나, 3.5 MeV이상의 높은 에너지 범위에서는 사용후 DUPIC핵연료의 감마선 세기가 휭씬 크게 나타났다. 중성자 선원항은 모두 악티나이드 물질의$({\alpha},\;n)$ 반응 및 자발핵분열에 의해 결정되고 있고, 특히 Cm-244의 자발 핵분열에 의한 중성자선원이 지배적인 것으로 나타났다. 이런 이유 때문에 Cm-244의 농도가 약 3.3배 큰 사용후 DUPIC핵연료의 중성자 선원이 경수로핵연료보다 4배 이상 크게 나타났다.

• 한국방사선학회논문지
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• 제12권2호
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• pp.123-131
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• 2018

본 연구는 점 선원인 $^{60}Co$, $^{137}Cs$ 및 혼합부피선원을 이용하여 피크 대 컴프턴 비율, 연속체 배경 스펙트럼을 감소시키기 위해 저 에너지 peak부터 고 에너지 peak에서 측정된 측정치와 PENELOPE와 비교하였다. 또한, 저에너지 부근에서의 변화를 통해 후방산란, 컴프턴 단(compton edge)의 효율 변화를 PENELOPE와 비교하였다. 혼합부피 선원에서 나온 결과를 토양시료에 적용하여 억제와 비 억제(unsuppressed)모드에서 토양시료의 최소검출한계치가 얼마큼 감소하였는지 확인하고자 한다. $^{60}CO$(1,173 keV)의 저에너지 영역의 컴프턴 억제가 상당히 되었으며, $^{137}Cs$(661 keV) 피크에 대한 Compton edge의 RF는 2.8이다. 특히, $^{60}Co$ 선원은 1,173.2keV와 1,332.5 keV의 coincidence 감마선을 방출하므로 컴프턴 억제는 대략 21% 감소하였다. 60Co 선원에서 방출되는 1,173keV와 1,332keV의 compton edge의 RF는 3.2, 3.4였으며 피크대 컴프턴 edge비율은 8:1로 향상되었다. 그리고, PENELOPE와 비교했을 때 불확도는 2% 이내로 잘 일치하였다. Compton unsuppressed 모드에서 661 keV, 1,173 keV 및 1,332 keV의 MDA 값은 각각 0.535, 0.173 및 0.136Bq/kg이었으나, Compton suppressed 모드에서는 0.121, 0.00826 및 0.00728B/kg로 감소하였다. 따라서, Compton suppres sed는 배후방사능과 검출기 자체에 함유된 방사능을 줄일 수 있었다.

• 센서학회지
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• 제23권2호
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 센서학회지
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• 제15권6호
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.122-123
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.9501 eV - $(8.79{\times}10^{-4}\;eV/K)T^2$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{1^-}$exciton peaks for n=1.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 방사성폐기물학회지
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• 제18권1호
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• pp.51-62
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• 2020

본 연구는 감마스펙트럼 비율을 이용한 매립된 선원의 깊이 평가방법 개발 및 적용성 확인을 위해 진행되었다. 이를 위해 현장측정 HPGe 계측기 및 MCNP 전산모사를 이용하여 ¹³⁷Cs, ⁶⁰Co, ¹⁵²Eu 선원의 매질 내 깊이와 계측거리에 따른 Peak to Compton, Peak to Valley 비율(Q)의 변화를 평가하였다. 해당 결과를 이용해 계측거리 50 cm를 기준으로 PTV 및 PTC 비율(Q)과 매립 선원의 깊이 간의 상관 식을 도출하였다. 그리고 PTC 및 PTV 방법 이용 시 계측거리 변화에 따른 민감도를 평가한 결과, 50 cm 기준으로 계측거리가 20 cm로 감소할 경우 오차가 3 ~ 4 cm까지 증가하였다. 하지만 100 cm로 증가할 경우 계측거리에 의한 영향이 미미함을 확인하였다. 그리고 PTV 및 PTC 방법과 피크 영역의 계수율 변화를 통해 선원의 깊이를 평가하는 Two distance measurement 방법을 상호 비교하였다. 평가 결과 PTV 및 PTC 방법은 최대 1.87 cm의 오차, Two distance measurement 방법은 최대 2.69 cm의 오차를 나타내어 PTV, PTC 방법의 정확도가 비교적 높음을 확인하였다. 선원의 수평 방향 위치 변화 민감도 평가 결과 Two distance measurement 방법은 선원이 off-center 방향으로 30 cm 이동하였을 경우 최대 오차가 25.59 cm로 나타났다. 반면 PTV 및 PTC 방법은 최대 오차 8.04 cm로 현장 적용 시 높은 정확도를 나타낼 것으로 예상된다. 그리고 PTC 방법은 동일 시간 측정 시 다른 방법과 비교하여 낮은 표준편차를 나타내 신속한 평가가 가능할 것으로 기대된다.

• 천문학회지
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• 제56권2호
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• pp.231-252
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• 2023

We present the analysis results of the simultaneous multifrequency observations of the blazar 4C +28.07. The observations were conducted by the Interferometric Monitoring of Gamma-ray Bright Active Galactic Nuclei (iMOGABA) program, which is a key science program of the Korean Very Long Baseline Interferometry (VLBI) Network (KVN). Observations of the iMOGABA program for 4C +28.07 were conducted from 16 January 2013 (MJD 56308) to 13 March 2020 (MJD 58921). We also used γ-ray data from the Fermi Large Array Telescope (Fermi-LAT) Light Curve Repository, covering the energy range from 100 MeV to 100 GeV. We divided the iMOGABA data and the Fermi-LAT data into five periods from 0 to 4, according to the prosody of the 22 GHz data and the presence or absence of the data. In order to investigate the characteristics of each period, the light curves were plotted and compared. However, a peak that formed a hill was observed earlier than the period of a strong γ-ray flare at 43-86 GHz in period 3 (MJD 57400-58100). Therefore, we assumed that the minimum total CLEANed flux density for each frequency was quiescent flux (S_q) in which the core of 4C +28.07 emitted the minimum, with the variable flux (S_var) obtained by subtracting S_q from the values of the total CLEANed flux density. We then compared the variability of the spectral indices (α) between adjacent frequencies through a spectral analysis. Most notably, α_22-43 showed optically thick spectra in the absence of a strong γ-ray flare, and when the flare appeared, α_22-43 became optically thinner. In order to find out the characteristics of the magnetic field in the variable region, the magnetic field strength in the synchrotron self-absorption (B_SSA) and the equipartition magnetic field strength (B_eq) were obtained. We found that B_SSA is largely consistent with B_eq within the uncertainty, implying that the SSA region in the source is not significantly deviated from the equipartition condition in the γ-ray quiescent periods.