• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.188-194
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• 1998

The GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displayed a direct energy gap at 1.79 eV and an indirect energy gap of 1.62 eV at 300 ${\circ}^$K. Also an optical absorption peak by impurity was found at 6505 $cm^{-1}$. The peak identified the origin of the electronic transitions to be between the energy levels of $Er^{3+}$ ions.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.726-728
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• 1998

Optical and electrical properties of GaSe:$Er^{3+}$ single crystals grown by the Bridgeman technique was been investigated by using optical absorption and Hall-effect measurements. The Hall coefficients were measured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. carrier density($N_H$) of GaSe doped with Erbium was measured about $3.25{\times}10^{16}\;[cm^{-3}}$ at temperature 300K, which was high than undoped specimen. Photon energy gap ($E_{gd}$) was measured about 1.7geV.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.79.1-79.1
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• 2000

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.239-241
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• 1996

The energy gap of GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displaced a direct energy gap at 1.79 eV and an indirect energy gap at 1.62 eV at $300^{\circ}K$ with the addition of Erbium. Also, an impurity optical absorption peak was found to have occurred at $6505\;cm^{-1}$. The peak identified the origin of the electronic transitions between the energy levels of $Er^{3+}$ ions when the addition of dopant.

• Journal of the Korean Ceramic Society
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• v.37 no.8
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• pp.781-786
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• 2000

An Er-doped sulfide fiber was drawn, and its spectroscopic properties were analyzed. Compositions of a 1000 ppmwt Er3+-doped core and an undoped clad were Ge30-Ga1-Asg-S61 and Ge30-As8-S62, in at.%, respectively. Refractive index of the core composition was approximately 0.01 high than that of the clad. In order to enhance the mechanical stability as well as to prevent infiltration of impurity ions such as OH-, an UV-curable polymer was used for the coating. The optical loss of a fiber formed directly from a polymer coated core rod without cladding was ∼15 dB/m at 1.06$\mu\textrm{m}$. In the case of a fiber with core/clad structure, the optical loss was so high that the stimulated emission of erbium fluorescence was not evident. It is believed that presence of inhomogeneous core/clad interface and crystalline aggregates precipitated in the clad region were responsible for the high optical loss. On the other hand, fluorescence characteristics of Er3+ embedded in the core region were more or loss deteriorate compared to fiber preform, which is attributed to the redistribution of the Er ions along with the partial crystallization of the core glass during the fiberization process.