Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with $Er^{3+}$

Erbium 도핑된 p-GaSe 단결성의 홀 효과 특성

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 김남오 (조선대학교 공과대학 전기공학과) ;
  • 손경춘 (조선대학교 공과대학 전기공학과)
  • Published : 2000.01.01

Abstract

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

Keywords

References

  1. J. Appl. Phys. v.76 no.1 Impurity levels in layer semiconductor p-GaSe doped with Mn S. Shigetomi;T. Ikari;H. Nakashima
  2. Jpn. J. Appl. Phys. Letter no.32 Heteroepitaxial Growth of layered semiconductor GaSe on a Hydrogenterminated Si(111) surface K. Y. Liu;K. Ueno;Y. Fujikawa;K. Saiki;A. Koma
  3. J. Appl. Phys. v.74 no.6 Optical and electrical properties of layer semiconductor p-GaSe doped with Zn S. Shigetomi;T. Ikari;H. Nakashima
  4. J. Appl. Phys. v.73 no.9 Electrical characteristics of layer semiconductor p-GaSe doped with Cd S. Shigetomi;T. Ikari;H. Nakashima
  5. J. Appl. Phys. v.83 no.9 Tin-related double acceptor in gallium selenium single crystals J. F. Sanchez-Royo;D. Errandonea;R. Segura;L. Roa;A. Chevy
  6. Jpn. J. Appl. Phys. v.32 Photoluminescence of MgGa₂Se₄single cryatals H. G. Kim;K. H. Park;B. N. Park;H. J. Lim;S. K. Min;H. L. Park;W. T. Kim
  7. J. Mat. Sci. Letter v.15 Optical properties of GaSe:$Er^{3+}$ single crystal W. S. Lee;N. H. Kim