Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Hall-effect Properties of Single Crystal Semiconductor p-GaSe Dopes with $Er^{3+}$

Erbium 도핑된 p-GaSe 단결성의 홀 효과 특성

  • 이우선 (조선대학교 공과대학 전기공학과) ;
  • 김남오 (조선대학교 공과대학 전기공학과) ;
  • 손경춘 (조선대학교 공과대학 전기공학과)
  • Published : 2000.01.01
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Abstract

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

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References

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