Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Etching Characteristics of Molybdenum Thin Films by Magnetically Enhanced Reactive lon Etching System

자장 강화 반응성 이온 식각 장비를 이용한 몰리브덴 박막의 식각 특성 연구

  • 김남훈 (중앙대학교 전자전기공학부) ;
  • 권광호 (한서대학교 전자공하고가) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2000.01.01
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Abstract

In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

Keywords

References

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