Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optical Properties of Erbium-doped GaSe Single Crystals

Erbium 첨가에 의한 GaSe 단결정의 광학적 특성

  • 이우선 (조선대학교 공대 전기공학과) ;
  • 김형곤 (조선대학교 공업전문대학 전기과) ;
  • 정용호 (조선대학교 공대 전기공학과) ;
  • 김남오 (조선대학교 공대 전기공학과)
  • Published : 1998.03.01
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Abstract

The GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displayed a direct energy gap at 1.79 eV and an indirect energy gap of 1.62 eV at 300 ${\circ}^$K. Also an optical absorption peak by impurity was found at 6505 $cm^{-1}$. The peak identified the origin of the electronic transitions to be between the energy levels of $Er^{3+}$ ions.

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References

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