• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.68-72
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• 2008

AlGaInP high-brightness LEDs(HB-LEDs) have gained importance a variety of application operating in the red, orange, yellow and yellow-green wavelength. The light generated from inside LED chips should be emitted to the air through the surfaces of the chips. However, because of the differences between the semiconductor and air or epoxy's refractive index, some of the light was blocked so that caused lowering external quantum efficiency. In this study, nano-scale roughness on the top-GaP layer of AlGaInP epitaxial wafer was fabricated to improve' the brightness of AlGaInP LEDs. Nano-scale roughness was made by ICP dry etcher. Our AlGaInP LEDs with nano-scale roughness has higher brightness (about 28.5 %) than standard AlGaInP LEDs.

• 한국전자파학회지:전자파기술
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• 제2권2호
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• pp.30-37
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• 1991

GaAs MESFET의 소신호 등가 모델에서 외부 푀로 성분들을 결정하는 개선된 방법을 제시하였다. 정화간 내부 회로 성분값들을 구하기 위하여 외부 회로 성분들을 제거하는 것이 중요하다. 전송선로를 포함한 기생 인덕터와 커패시터로 이루어지 ㄴ외부 회로를 정립하고, 산란 행렬로부터 이들의 값을 구한 후에 내부 회로 성분을 구하였다. 특히 기생 인덕턴스와 커패시턴스값들은 주파수에 따라 거의 일정한 변화를 보였다.

• 전자공학회논문지D
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• 제35D권1호
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• pp.34-40
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• 1998

For applicating to 10-Gbit/s optical transimission systems, we have designed and fabricated a laser driver IC with extremely-high-operation-frequencies using AlGaAs/GaAs heterojunction bipolar transistors (HBTs), and have investigated its performances. Circuits design andsimulation were performed using SPICE and LIBRA. A discrete AlGaAs/GaAs HBT with the emitter area of 1.5*10 .mu.m$^{2}$, used for the circuit fabrication, exhibited cutoff frequency of 63 GHz andmaximum osciallation frquency of 50 GHZ. After fabrication of MMICs, we observed the very wide bandwidth of DC~18 GHz and the S$_{21}$ gain of 17 dB for a laser driver IC from the on-wafer measurement. Metal-packaged laser driver IC showed the excellent eye opening, the modulation currents of 32 mA, the rise/fall time of 40 ps, measured at the data rates of 10-Gbit/s.

• 전자공학회논문지A
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• 제31A권9호
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• pp.72-77
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• 1994

GaAs MISFETs, with photo-CVD grown P$_{3}$N$_{5}$ gate insulator and sulfide treatment, have been fabricated and showed the instability of drain current reduced less than 22 percent for the period of 1.0s~1.0${\times}10^{4}s$. The effective electron mobility and extrinsic transconductance of the device are about 1300cm$^{2}$/V.sec and 1.33mS at room temperature. The C-V characteristics of GaAs MIS Diode and AES analysis are also discussed with respect to effect of sulfide treatment conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 D
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• pp.2653-2655
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• 2001

In this paper, we proposed a method of modeling a system using Fuzzy Equalization(FE) and Genetic Algorithm(GA). The initial model is constructed using FE. The antecedent parameters and the rules in fuzzy logic are tuned by GA. The proposed system minimizes the modeling error and the size of structure. The process of building membership functions using PDF(Probability Density Function) and GA tunes the antecedent parameter and rules for minimizing the error and structure. The usefulness of proposed method is demonstrated by applying to Box-Jenkins furnace data.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.69-73
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• 2002

We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.46-47
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• 2005

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

• 한국세라믹학회지
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• 제36권10호
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• pp.1056-1061
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• 1999

Phase formation and oxygen ion conduction of La(Ba)Ga(Mg)O3-$\delta$ system was studied, BaLaGa3O7 and BaLaGaO4 formed as a secondary phase above the solubility limit of Ba2+ in La3+ sites. The oxygen ionic conductivity of La(Ba)Ga(Mg)O3-$\delta$ was 0.1 S/cm 80$0^{\circ}C$ The activation energy of the oxygen ion conduction was dependent on temperature. This value was higher at low temperature than at high temperature.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.170-170
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• 2003

We have implanted on sapphire substrate with various ions and investigated the properties of GaN epilayers grown on implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion implanted substrate's surface had decreased internal tree energies during the growth of the GaN epilayer, md the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates. [1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.