• Resources Recycling
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• v.4 no.3
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• pp.10-18
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• 1995

Recycling of GaAs scrap which occurs durmg the manufachre of GaAs waters is. therefore, required to solve the environmentalproblcrns caused by arsenic metal and to reutilize gallium which is a expensive metal. A thema-analyticalstudy (thermogravimeg. and derivative thermogravimetry) tor the evaporation behavior of Fa, As from Gak\ulcorner scrap powdersat vacuum atmosphere(2-2.5X 10'mmHg); was primarily performed to identi j the possibility of Ga extraction. Until79YC, the weight change of G d s porvder does not take place, at 800-970C range GaAs vaporizes as the GaAs compound,and over 1WO"C it decamposes mto Ga and As md then As vaporizes rapidly as a result of the difference af vaporprcssure for Ga and As, liquid Ga rcmains eventually.mains eventually.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1517-1519
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• 1999

FED용 형광체로 사용되는 $ZnGa_2O_4$를 Glycine Nitrate Process로 합성하여 고상 반응법으로 합성한 $ZnGa_2O_4$ 분말과 비교 분석하였다. 또한 Glycine Nitrate Process로 제조시 Mn의 doping 농도를 변화시키면서 각각의 조성비에 따른 발광특성을 알아보았다. TGA 측정 결과 GNP법으로 합성된 $ZnGa_2O_4$의 경우약 $300^{\circ}C$이상에서 무게감량이 없으며, XRD 상분석 결과 연소반응 후 이미 상형성이 이루어짐을 알 수 있었다. PL측정을 결과 GP(Glycine Nitrate Process)로 제조된 $ZnGa_2O_4$ 분말의 발광효율이 고상 반응법으로 제조된 분말보다 우수하였으며, 균일하고 비표면적이 큰 단일상임이 관찰되었고, 더 작은 에너지와 시간으로 제조할 수 있는 장점이 있었다.

• Electronics and Telecommunications Trends
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• v.27 no.1
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• pp.74-85
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• 2012

차세대 화합물 반도체 플랫폼으로 각광을 받고 있는 GaN 전자소자 글로벌 연구개발 동향에 관하여 기술하고자 한다. GaN 전자소자는 와이드 밴드갭(Eg=3.4eV)과 고온 안정성($700^{\circ}C$) 등 재료적인 특징으로 인하여 고출력 RF 전력증폭기와 고전력용 전력반도체 응용에 큰 장점을 가진다. GaN 전자소자 기술동향에서는 먼저 미국, 유럽, 일본을 중심으로 한 대형 국책 연구프로젝트 분석을 통한 RF 전력증폭기 연구개발 방향을 살펴보고, 후반부에서는 이동통신 기지국, 선박 및 군용 레이더 트랜시버용 고출력 RF 전력증폭기의 응용 분야에 관하여 알아본다. 이러한 총체적인 동향분석을 통하여 차세대 반도체의 신시장 개척과 선진입을 위한 GaN 전자소자의 연구개발 방향과 조기상용화의 중요성을 함께 생각해보고자 한다.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.3
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• pp.292-297
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• 1987

High-speed GaAs IC Logic Gates being widely studied and developed in the develped countries were reanalysed and reexamined through SPICE simulations. And, furthermore, the detailed examinations of their characteristics such as operation characteristics and conditions, integration densities, service-ableness, and the limitation of both fabrication and application, give us a clue of the feasibility and application of them in the real integrated circuits. This paper will provide a reasonably good guide to set-up one of goals or future development of high-speed GaAs IC's being led by the goverment recently in our country.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.2305-2307
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• 2000

In this paper we propose a Neuro-Fuzzy modeling method using mGA for complex nonlinear system. mGA has more effective and adaptive structure than sGA with respect to using the changeable-length string. This paper suggest a new coding method for applying the model's input and output data to the number of optimul rules of fuzzy models and the structure and parameter identifications of membership function simultaneously. The proposed method realize optimal fuzzy inference system using the learning ability of Neural network. For fine-tune of the identified parameter by mGA, back-propagation algorithm used for optimulize the parameter of fuzzy set. The proposed fuzzy modeling method is applied to a nonlinear system to prove the superiority of the proposed approach through compare with ANFIS.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.1952-1954
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• 2001

In this paper, we propose the neuro-fuzzy modeling method using VmGA (Virus messy Genetic Algorithm) for the complex nonlinear system. VmGA has more effective and adaptive structure than sGA. in this paper, we suggest a new coding method for applying the model's input and output data to the optimal number of rules in fuzzy models and the structure and parameter identification of membership functions simultaneously. The proposed method realizes the optimal fuzzy inference system using the learning ability of neural network. For fine-tune of parameters identified by VmGA, back- propagation algorithm is used for optimizing the parameter of fuzzy set. The proposed fuzzy modeling method is applied to a nonlinear system to prove the superiority of the proposed approach through comparing with ANFIS.

• Journal of Biomedical Engineering Research
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• v.32 no.2
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• pp.165-176
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• 2011

The femoral nerve innervates the quadriceps muscles and its dermatome supplies anteromedial thigh and medial foot. Paralysis of the quadriceps muscles due to the injury of the femoral nerve results in disability of the knee joint extension and loss of sensory of the thigh. A child could walk independently even though he had injured his femoral nerve severely due to the penetrating wound in the medial thigh. We measured and analyzed his gait performance in order to find the mechanisms that enabled him to walk independently. The child was eleven-year-old boy and he could not extend his knee voluntarily at all during a month after the injury. His gait analysis was performed five times (GA1~GA5) for sixteen months. His temporal-spatial parameters were not significantly different after the GA2 or GA3 test, and significant asymmetry was not observed except the single support time in GA1 results. The Lower limb joint angles in affected side had large differences in GA1 compared with the normal normative patterns. There were little knee joint flexion and extension motion during the stance phase in GA1 The maximum ankle plantar/dorsi flexion angles and the maximum knee extension angles were different from the normal values in the sound side. Asymmetries of the joint angles were analyzed by using the peak values. Significant asymmetries were found in GA1with seven parameters (ankle: peak planter flexion angle in stance phase, range of motion; ROM, knee: peak flexion angles during both stance and swing phase, ROM, hip: peak extension angle, ROM) while only two parameters (maximum hip extension angle and ROM of hip joint) had significant differences in GA5. The mid-stance valleys were not observed in both right and left sides of vertical ground reaction force (GRF) in the GA1, GA2. The loading response peak was far larger than the terminal stance peak of vertical ground reaction curve in the affected side of the GA3, GA4, GA5. The measured joint moment curves of the GA1, GA2, GA3 had large deviations and all of kinetic results had differences with the normal patterns. EMG signals described an absence of the rectus femoris muscle activity in the GA1 and GA2 (affected side). The EMG signals were detected in the GA3 and GA4 but their patterns were not normal yet, then their normal patterns were detected in the GA5. Through these following gait analysis of a child who had selective injuries on the knee extensor muscles, we could verify the actual functions of the knee extensor muscles during gait, and we also could observe his recovery and asymmetry with quantitative data during his rehabilitation.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.4
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• pp.45-53
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• 1999

A pre amplifier, a limiting amplifier, and a decision IC chipset for 10Gbit/s optical receiver was implemented with AIGaAs/GaAs HBT(Heterojunction Bipolar Transistor) technology. The HBT allows a cutoff frequency of 55GHz and a maximum oscillation of 45GHz. An optical receiver front-end was implemented with the fabricated pre amplifier IC and a PIN photodiode. It showed 46dB$\Omega$, gain and $f_{3db}$ of 12.3GHz. The limiting amplifier Ie showed 27dB small signal gain, $f_{3db}$ of 1O.6GHz, and the output is limited to 900mVp-p from 20mVp-p input voltage. The decision circuit IC showed 300-degree phase margin and input voltage sensitivity of 47mVp-p at 1OGbit/s.