• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.3
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• pp.29-34
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• 2021

For the purpose of Application to the small radar sensor, the MMIC Chips, which are the core component of the W-band, was designed in Korea according to the characteristics of the transceiver and manufactured by 60nm GaN and 0.1㎛ GaAs pHEMT process. The output power of PA is 28 dBm at center frequency of W-band and Noise figure is 6.7 dB of switch and LNA MMIC. Output power and Noise figure of MMIC chips developed in domestic was applied to the transmitter and receiver module through W-band waveguide low loss transition structure design and impedance matching to verify the performance after the fabrication are 26.1~27.7 dBm and 7.85~10.57 dB including thermal testing, and which are close to the analysis result. As a result, these are judged that the PA and Switch and LNA MMICs can be applied to the small radar sensor.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.314-314
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.617-621
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• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• Journal of IKEEE
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• v.26 no.4
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• pp.537-544
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• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1998.10a
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• pp.823-826
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• 1998

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.3
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• pp.3-7
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• 2015

• KIPE Magazine
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• v.26 no.6
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• pp.62-67
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• 2021

• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.5-6
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• 2015

본 논문은 GaN (Gallium Nitride) HEMT (High Electron Mobility Transistor) 소자의 동작 특성과 Normally-off형 p-GaN 및 cascode-GaN 소자의 구현 방식에 따른 차이점을 분석한다. 두 소자의 차이점에 따른 동작 특성을 비교하고 게이트 구동 시 고려되어야 할 설계 요소를 분석한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.490-496
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• 2015

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.17-20
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• 2000

We have enhanced the yield of 0.25 ${\mu}{\textrm}{m}$ T-gate $Al_{0.25}$G $a_{0.75}$As/I $n_{0.2}$G $a_{0.8}$As P-HEMT using three-layer E-beam lithography process and selective etching process. The three-layer resist structure (PMMA/copolymer/ PMMA=2000 $\AA$/3000 $\AA$/2000 $\AA$) and three developers (Benzene：IPA=1：1,Methanol：IPA =1：1,MIBK：IPA=1：3) were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. Also 1 wt% citric acid： $H_2O$$_2$：N $H_{4}$OH(200m1：4ml：2.2ml) solution were used for uniform gate recess. The etching selectivity of GaAs over $Al_{0.25}$G $a_{0.75}$As is measured to be 80. So these P-HEMT processes can be used in X-band MMIC LNA fabrication.ion.ion.ion.