• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.59-62
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• 2005

백색 LED 램프를 제조하는 공정에서 램프간의 전기적 개방상태의 절연상태를 유지하기 위해 사파이어 기판 위에 성장된 GaN 계 반도체 에피박막층을 제거하기 위해 유도 결합형 플라즈마 식각 공정을 이용하였다. 4 미크론의 두께를 갖는 GaN 층을 식각하는데 있어 식각 방지 마스킹 물질로 포토레지스트, $SiO_2,\;Si_{3}N_4$ 및 $Al_{2}O_3$를 시험하였다. 동일한 전력 및 가스유량상태에서 $Al_{2}O_3$만 에피층을 보호할 수 있음을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.67.2-67.2
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• 2007

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.486-493
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• 2003

Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{＋}$-GaN and AlGaN/AlGaN interlayer/ $n^{＋}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

• Journal of Electrical Engineering and Technology
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• v.3 no.2
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• pp.276-279
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• 2008

We report on the enhancement of cathode-luminescence in an $In_xGa_{1-x}N/In_yGa_{1-y}$ green light emitting diode structure using two-dimensional photonic crystals. The square lattice arrays of photonic crystals with diameter/periodicity of 200/500 nm were fabricated by electron beam lithography. Inductively coupled plasma dry etching was used to etch and define photonic crystals. Three samples with different etch depths, i.e., 170, 95, and 65 nm, were constructed. Field emission scanning electron microscope analysis shows that air holes of photonic crystal structure with inverted-cone shapes were fabricated after dry etching. Cathode-luminescence measurement indicated that up to 30-fold enhancement of cathode-luminescence intensity has been achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.414-414
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• 2009

나노스피어 리소그래피는 기존의 리소그래피 방법에 비해 나노 크기 패턴을 제작하는데 공정이 간단하며 재현성있게 대면적에 패터닝이 가능하다는 장점이 있다. 본 연구에서는 Vertical LED(V-LED)의 External quantum efficiency 향상을 위하여 나노스피어 리소그래 피를 이용하여 V-LED의 n-GaN 표면을 패터닝을 하였다. n-GaN 위에 Sputter를 이용하여 $SiO_2$를 증착 후 나노스피어를 스핀 코팅을 이용하여 단일막을 형성하였다. 그 후, 반응성 이온 식각 장치를 이용하여 나노스피어의 크기를 조절하고 $SiO_2$층을 식각하였다. 다음과 같은 공정 후 $SiO_2$층을 Mask층으로 하여 n-GaN 표면을 식각하였다. 실험 결과 나노스피어 리소그래피를 이용하여 V-LED의 External quantum efficiency 향상을 위한 n-GaN 표면의 패턴 제작이 가능함을 확인할 수 있었다.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.152-156
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• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.273-276
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• 2011

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-$SiO_2$ nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.