Research Trends for Improvement of NBIS Instability in Amorphous In-Ga-ZnO Based Thin-Film Transistors (비정질 인듐-갈륨-아연 산화물 기반 박막 트랜지스터의 NBIS 불안정성 개선을 위한 연구동향)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.32 no.5
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- pp.371-375
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- 2019