• 대한핵의학회:학술대회논문집
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• 1985.05a
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• pp.167.2-168
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• 1985

• KIPE Magazine
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• v.26 no.6
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• pp.62-67
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• 2021

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.65-70
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• 1994

GaAs power MESFETs with 0.8$\mu$m gate lengths are fabricated using image reversal (IR) methods on the wafer with an undoped surface layer grown by MOCVD. The fabricated GaAs power MESFETs with an undoped surface layer show that an ideality factor 1.17, a built-in potential 0.83 V, a pinch-off voltage -2.7 V, a specfic contact resistance 1.21$\times$10$^{5}$ ~3.42$\times$10$^{2}$$\Omega$-cm$^{2}$ and an extrinsic g$_{m}$ = 103.5 mS/mm. The maximum RF output power densities of the 0.8$\mu$m devices are 360 mW/mm and 499 mW/mm, and power added efficiencies 29.67% and 29.05%, for the unit gate width 150$\mu$m and 200$\mu$m at 12 GHz.

• Korean Journal of Optics and Photonics
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• v.2 no.2
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• pp.67-73
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• 1991

The unsaturated signal gain, signal gain bandwidth, and saturation power which are important parameters determining characteristics of the semiconductor laser amplifier were measured for an AlGaAs Fabry-Perot cavity type laser amplifier and compared with the results of Fabry-Perot formula. The unsaturated signal gain 25 dB is obtained near oscillation thereshold current at $0.7\mu\textrmW$ input power. The corresponding signal gain bandwidth was about 3 GHz. Also. We measured the variation of the saturation signal gain and saturation power.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.3
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• pp.149-154
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• 2018

We consider the system is subject to the linearly polarized oscillatory external field. We study the optical quantum transition Line shapes(QTLS) which show the absorption power and the quantum transition line widths(QTLW) of electron-piezoelectric phonon interacting system. We analyze the magnetic field dependence of the QTLS and the QTLW in various cases. In order to analysis the quantum transition, we compare the magnetic field dependence of the QTLW and the QTLS of two transition process, the intra-Landau level transition process and the inter-Landau level transition process.

• Nuclear Medicine and Molecular Imaging
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• v.40 no.4
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• pp.193-199
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• 2006

Infectious and inflammatory bone diseases include a wide range of disease process, depending on the patient's age, location of infection, various causative organisms, duration from symtom onset, accompanied fracture or prior surgery, prosthesis insertion, and underlying systemic disease such as diabetes, etc. Bone infection may induce massive destruction of bones and joints, results in functional reduction and disability. The key to successful management is early diagnosis and proper treatment. Various radionuclide imaging methods including three phase bone scan, Ga-67 scan, WBC scan, and combined imaging techniques such as bone/Ga-67 scan, WBC/bone marrow scan add complementary role to the radiologic imaging modalities including plain radiography, CT and MRI. F-18 FDG PET imaging also has recently been introduced in diagnosis of infected prosthesis and chronic active osteomyelitis. Selection of proper nuclear medicine imaging method will improve the diagnostic accuracy of infections and inflammatory bone diseases, based on understading of pathogenesis and radiologic imaging findings.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.1
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• pp.47-51
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• 2018

This paper is concerned with an optimization design of Incremental Granular Model(IGM) based Genetic Algorithm (GA) as an evolutionary approach. The performance of IGM has been successfully demonstrated to various examples. However, the problem of IGM is that the same number of cluster in each context is determined. Also, fuzzification factor is set as typical value. In order to solve these problems, we develop a design method for optimizing the IGM to optimize the number of cluster centers in each context and the fuzzification factor. We perform energy analysis using 12 different building shapes simulated in Ecotect. The experimental results on energy efficiency data set of building revealed that the proposed GA-based IGM showed good performance in comparison with LR and IGM.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.767-772
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• 2018

Recently, some meta-heuristic algorithms, such as GA(Genetic Algorithm) and GP(Genetic Programming), have been used to optimize CNN(Convolutional Neural Network). The CNN, which is one of the deep learning models, has seen much success in a variety of computer vision tasks. However, designing CNN architectures still requires expert knowledge and a lot of trial and error. In this paper, the recent attempts to automatically construct CNN architectures are investigated and analyzed. First, two GA based methods are summarized. One is the optimization of CNN structures with the number and size of filters, connection between consecutive layers, and activation functions of each layer. The other is an new encoding method to represent complex convolutional layers in a fixed-length binary string, Second, CGP(Cartesian Genetic Programming) based method is surveyed for CNN structure optimization with highly functional modules, such as convolutional blocks and tensor concatenation, as the node functions in CGP. The comparison for three approaches is analysed and the outlook for the potential next steps is suggested.