• Title/Summary/Keyword: Ga-67

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A Case of Active Renal Tuberculosis Diagnosed with $^{67}Gallium$ scan ($^{67}Gallium$ 스캔으로 진단된 활동성 신장결핵 1예)

  • Cho, Tae-Bong;Kim, Chul-Woo;Kim, So-Yon;Kim, Young-Jung;Cho, Min-Koo
    • The Korean Journal of Nuclear Medicine
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    • v.21 no.1
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    • pp.83-88
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    • 1987
  • $^{67}Ga$ Scanning may be a useful adjuvant in screening for suspected extrapulmonary tuberculosis and in assessing the response of therapy. A 52-year-old man with renal tuberculosis showed a renal localization of $^{67}Ga-citrate$ scans. Follow-up Scans after 3 months of chemotherapy showed decrease in uptake. So we present a case with the brief review of literatures.

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GaN-based Low Noise Amplifier MMIC for X-band Applications (X-대역 응용을 위한 GaN 기반 저잡음 증폭기 MMIC)

  • Byeong-Ok Lim;Joo-Seoc Go;Sung-Chan Kim
    • Journal of IKEEE
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    • v.28 no.1
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    • pp.33-37
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    • 2024
  • In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

Analysis of Optimum Impedance for X-Band GaN HEMT using Load-Pull (로드-풀을 이용한 X-Band GaN HEMT의 최적 임피던스 분석)

  • Kim, Min-Soo;Rhee, Young-Chul
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.5
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    • pp.621-627
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    • 2011
  • In this paper, we analysed performance for on-wafer GaN HEMT using load-pull in X-band, and studied optimum impedance point based on analysis result. We suggested method of optimum performance device by analysis of optimum impedance for solid state device on-wafer condition before packaging. The measured device is gate length 0.25um, and gate width is 400um, 800um. device 400um is performed $P_{sat}$=33.16dBm, PAE=67.36%, Gain=15.16dBm, and device 800um is performed $P_{sat}$=35.91dBm, PAE=69.23%, Gain=14.87dBm.

Distribution of $^{123}I,\;^{99m}Tc-Human$ Polyclonal Nonspecific IgG and $^{67}Ga-Citrate$ in Abscess bearing Mice ($^{123}I,\;^{99m}Tc$ 사람 비특이 IgG 및 $^{67}Ga-Citrate$의 실험동물에서 염증병소 섭취율의 비교)

  • Lim, Sang-Moo;Woo, Kwang-Sun;Chung, Wee-Sup;Awh, Ok-Doo;Seo, Yong-Sup;Lee, Jong-Doo
    • The Korean Journal of Nuclear Medicine
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    • v.26 no.1
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    • pp.116-123
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    • 1992
  • $^{123}I$ has ideal half life of 13 hours, suitable 159 keV gamma energy for imaging, and easy labeling methods. In Korea Cancer Center Hospital, $^{123}I$ has been produced by MC-50 cyclotron. The purpose of this study is looking for good labeling condition of $^{123}I$ and $^{99m}Tc$ to nonspecific human polyclonal IgG, and comparing these with $^{67}Ga-citrate$ in the abscess bearing mice. Human polyclonal nonspecific IgG was labeled with 0.2 M phosphate buffer added $^{123}I$ by chloramine T method. Human polyclonat nonspecific IgG was labeled with $^{99m}Tc-gluconate$ after activation with $\beta-mercaptoethanol$. In the abscess bearing mice, the radioactivity in the abscess was higher in 24 hours than 6 hours after injection. In the abscess, $^{123}I$ nonspecific IgG had higher uptake than $^{99m}Tc-IgG\;or\;^{67}Ga-citrate$. There was no significant difference in absecess uptake of $^{123}I-IgG$ among 24, 72, 120 hours abscess age. Further clinical researches with $^{123}I-nonspecific$ IgG, and other immunoscintigraphies using $^{123}I$ are expected.

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