• The Transactions of the Korean Institute of Power Electronics
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• v.13 no.5
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• pp.391-395
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• 2008

KEPCO 80MVA UPFC has been operated in Gangjin Substation since May 2003. This UPFC is composed of 40MVA shunt inverter and 40MVA series inverter, and developed in technical cooperation between Hyosung and Siemens. KEPCO has tried to localize UPFC control technique after its installation and developed GTO Thyristor Valve Test Equipment for annual maintenance test. The development of this equipment make it possible to process GTO Thyristor module test automatically and manage historic data systematically, which could improve UPFC reliability.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.1 no.2
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• pp.82-87
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• 1987

본 연구에서는 GTO Thyristor로 구성하고 개선한 대용량 전류형GTO Inveter를 설계하였다. 부하로서는 유도전류기를 사용하였으며, 그 동작 특성을 비교 검토한 결과 전류콘덴서를 사용하지 않으므로 전류시 Chopper 회로에 과도현상을 줄였으므로 회로에 안정성이 향상됨을 나타내었다.

• Proceedings of the KIEE Conference
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• 1984.07a
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• pp.270-271
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• 1984

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.376-378
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• 1994

The turn-off behavior of the GTO Thyristor by its nature differs very much from that of other power f semiconductor switching devices. So canful attention should be paid in designing the GTO snubber circuit. This paper presents the effect of turn-off snubber circuit elements on the switching characteristics of the GTO, and describes considerations and criteria for the selection of the snubber component values.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.8
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• pp.610-616
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• 1989

The line commutated inverter with GTO forced commutation is described in this paper. The presented circuit has one bypass GTO inserted in DC power side line commutated thyristor inverter. The extended commutation region with additional one GTO-commutation is clearly shown. Also, a new PWM pattern is presented to decrease the effects of harmonics for commutation. A criterion for designing the AC filter parameters to decrease harmonics of AC part is given. The simulation and experimental results clearly show that the proposed circuit can be adapted in the application of regeneration.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.241-245
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• 1998

This paper gives the novel design of compensated ring anode-short for power GTO thyristor. By means of this design the power GTO of $\Phi$63.5mm 2500A/4500V reaches more uniform turn-off compared with conventional ring short GTO, resulting in higher turn-off ability and low tail current/tail time.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.535-540
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• 1998

This paper discusses a triple stage current source GTO inverter system for high power motor drives. The energy rebound circuit of the triple stage inverter not only controls the spike voltage of the GTO inverter but also facilitates PWM control of the thyristor rectifier operated at unity fundamental input power factor. Based on Pspice simulation and experiments, the principles and PWM pulse pattern for removing specific lower harmonics in the inverter's output current are discussed in detail.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.417-420
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• 1998

In this paper the formation mechanism of tail current is analyzed and its effect on GTO turn-off performance is given. The conclusion is that the large tail current will considerably increase the turn-off loss $E_{off}$ and cause the re-triggering during GTO's off-switching, therefore the best design criterion is that the tail current of power GTO must be as low as possible.w as possible.