• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.65 no.10
• /
• pp.1664-1671
• /
• 2016

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

• Transactions of Materials Processing
• /
• v.14 no.1 s.73
• /
• pp.49-56
• /
• 2005

In the semi-solid die casting process, an important thing is the flow behavior of semi-solid materials. The flow patterns of the semi-solid material can make the defects during die filling. To control the flow patterns is very important and difficult. In this paper, the flow behavior of the semi-solid A356 alloy material during die filing at various die gate shapes has been observed with the grain size controlled material. The effect of the gate shape on the die filling characteristics was investigated. The filling tests in each plunger stroke were experimented, and also simulated on the semi-solid material die casting process by MAGMAsoft. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation has been investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.10a
• /
• pp.152-155
• /
• 2004

In the semi-solid die casting process, the important thing is the flow behaviors of semi-solid material. The flow patterns of semi-solid material can make the defects during die filling. To control of the flow patterns, is very important and difficult. In this paper, the flow behaviors of the semi-solid A356 alloy material during die filling at various die gate shapes has been observed with the grain size controlled material. The effects of the gate shape on the die filling characteristics were investigated. The filling tests in each plunger strokes were experimented, also simulated on the semi-solid material die casting process by MAGMAsofi. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation had been investigated.

• 한국신재생에너지학회:학술대회논문집
• /
• 2011.11a
• /
• pp.165.2-165.2
• /
• 2011

Flow with suction to water turbine must be in stable state at small hydraulic power plant. But because of water level fluctuation and water gate effect according to irregular supply of cooling water, it would happen to produce bubble and vortex and finally lead to problems in power-plant system. With utilizing the concept design of double size gate, surface water overflowed the overhead of gate for stable flow at suction. We developed the overflow condition and analyzed the design factor with existed one such as water level(overflow amount) and overhead of water gate(overflow figure). Flow test and CFD simulation say that flow have stable state around suction and 20% of wave reduction effect at surface layer after surface water overflow.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.2
• /
• pp.73-77
• /
• 2000

A dual-gate SOI SA-LIGBT (shorted-anode lateral insulated gate bipolar transistor) which eliminates the snapback effectively is proposed and verified by numerical simulation. The elimination of the snapback in I-V characteristics is obtained by initiating the hole injection at low anode voltage by employing a dual gate and a floating electrode in the proposed device. For the proposed device, the snapback phenomenon is completely eliminate, while snapback of conventional SA-LIGBT occurs at anode voltage of 11 V. Also, the drive signals of two gates have same polarity by employing the floating electrode, thereby requiring no additional power supply.

• Proceedings of the KSR Conference
• /
• 2009.05a
• /
• pp.1943-1950
• /
• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.28 no.12
• /
• pp.116-123
• /
• 2014

In case of power electronics, th power loss and EMI noise of IGBT is different depends on a adopting technology with the same power rating. To reduce the EMI noise, we could increase the resistance of gate. But in this case, the power loss of IGBT is increased, In this paper, we simulated the power loss of IGBT with the speed profile of elevator by the changing IGBT type, the voltage between gate and emitter, the resistance of gate in converter and inverter for elevator. To optimize the power electronics with the satisfied life time, It is necessary that we calculate the power loss and the rise of temperature in IGBT with the adopting technology type, the resistence of gate, the voltage between gate and emitter.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.7
• /
• pp.358-363
• /
• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• Proceedings of the KIEE Conference
• /
• 1996.07b
• /
• pp.1304-1306
• /
• 1996

A regenerative signal amplifying gate driver of self-excited electronic ballast is presented. It can be used for high pressure sodium (HPS) lamp without auxiliary external ignitor. Since the HPS lamp requires very high ignition voltage at start up, the resonant frequency of the circuit must be increased to obtain high voltage oscillations in spite of relatively small resonant current. The presented gate driver amplifies the current of gate drive transformer and raises the gate-source voltage Quickly to turn on the MOSFET switches. Hence, the resonant frequency can be increased more than 100kHz. The HPS lamp used in the simulation and experiment has the rating of 400W input power at 220V input ac voltage source. The experiments show that the resonant frequency is above 150kHz at start up.

• Journal of Electrical Engineering and Technology
• /
• v.9 no.2
• /
• pp.649-654
• /
• 2014

In this paper, an analytical model for Surrounding Gate (SG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To achieve this goal, we have used variational approach for solving the Poission and Schrodinger equations. This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge density, threshold voltage, drain current and gate capacitance. The calculated expressions for the above parameters are simple and accurate. This paper also focuses on the gate tunneling issue associated with high dielectric constant. The validity of this model was checked for the devices with different dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.