• 공업화학
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• 제21권1호
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• pp.58-62
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• 2010

$TiOSO_4$와 다층벽탄소나노튜브(MWCNT)를 사용하여 가수분해법으로 CNT-$TiO_{2}$ 나노복합체를 제조하였다. 제조된 $TiO_{2}$-CNT 복합체의 CNT는 아나타제 $TiO_{2}$에 균일하게 분산되어 있으며 MWCNT의 첨가량이 증가함에 따라 결정성 탄소의 비율과 O/Ti 비율이 증가함을 확인할 수 있다. CNT-$TiO_{2}$복합체의 광활성 및 오염물 흡착능력을 UV 조사 시간에 따른 메틸렌블루의 분해정도로 확인하였다. MWCNT의 비율이 높아질수록 높은 흡착능과 광분해능을 나타내었다. 이는 MWCNT의 높은 비표면적, 산소포함 관능기, 낮은 밴드갭 에너지, 높은 전기전도성, 높은 부피 대 표면적 비율, 균일한 구조 및 특성으로 인하여 CNT-$TiO_{2}$ 복합체의 광활성에 도움을 주는 것으로 보인다.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1485-1490
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• 2014

We have designed and developed a new ladder type tetrafused ${\pi}$-conjugated building block such as dihydroindolo[3,2-b]indole (DINI) and investigated its role as an electron rich unit. The photovoltaic properties of a new semiconducting ${\pi}$-conjugated polymer, poly[[5,10-bisoctyl-5,10-dihydroindolo[3,2-b]indole-[5,6- bis(octyloxy)-4,7-di(thiophen-2-yl)benzo[c][1,2,5]thiadiazole]], represented by PDINI-OBTC8 are described. The new polymer PDINI-OBTC8 was synthesized in donor-acceptor (D-A) fashion, where fused ${\pi}$-conjugated tetracyclic DINI, and 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl) benzo[c][1,2,5]thiadiazole (OBTC8) were employed as electron rich (donor) and electron deficient (acceptor) moieties, respectively. The conventional bulk heterojunction (BHJ) device structure ITO/PEDOT:PSS/PDINI-OBTC8:PCB71M/LiF/Al was utilized to fabricate polymer solar cells (PSCs), which comprises the blend of PDINI-OBTC8 and [6,6]-phenyl-$C_{71}$-butyric acid methyl ester ($PC_{71}BM$) in BHJ network. A BHJ PSC that contain PDINI-OBTC8 delivered power conversion efficiency (PCE) value of 1.68% with 1 vol% of 1,8-diidooctane (DIO) under the illumination of A.M 1.5G 100 $mW/cm^2$.

• 분석과학
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• 제24권6호
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• pp.451-459
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• 2011

3종의 8배위 터븀 착화합물 [tris (2-pyrazinecarboxylato) (phenanthroline) terbium (III), tris (5-methyl-2-pyrazinecarboxylato) (phenanthroline) terbium(III) 및 tris (2-picolinato) (phenanthroline) terbium (III)]을 합성하고, 이 화합물을 FT-IR, UV 및 XPS 사용하여 특성평가 하였다. 또한, PL 스펙트라를 통하여 합성된 터븀 착화합물은 강한 녹색 형광을 방출하는 것을 확인하였으며, 시간 분해 분광분석기를 통하여 합성된 터븀 착화합물의 형광 반감기가 0.87 ms 및 1.0 ms임을 알았고, 열분석을 통하여 합성된 터븀 착화합물의 열안정성은 $333-379^{\circ}C$ 나타내는 것을 확인하였다. CV를 통하여 합성된 터븀 착화합물의 경우 HOMO-LUMO 에너지 차이가 4.26~4.41 eV를 나타냈는데, 이것은 UV-visible 스펙트라에서 얻은 값과 유사한 값임을 확인하였다. 따라서, 제조된 터븀 착화합물은 초록색을 발광하는 디바이스 재료로 사용할 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• 대한화학회지
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• 제37권6호
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• pp.549-554
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• 1993

티타늄 금속판을 공기산화와 수증기 산화하여 만든 Ti$O_{2-x}$ 박막을 시료로 사용하여 1M NaOH 용액에서 광전기화학적 성질을 연구하였다. 높은 온도에서 제조된 Ti$O_{2-x}$ 전극들은 낮은 온도에서 제조된 전극들보다 더 음의 값으로 주어지는 flat band potential($V_{fb}$)과 더 높은 donor density($N_D$)를 가졌다. 전극전위의 변화에 따른 광전류 측정과 Mott-Schottky plot로부터 얻은 $V_{fb}$는 -0.95 ∼ -1.1 V 사이에서 비슷한 값으로 주어졌다. 자외부 영역의 광을 완전히 차단하는 TiO2 단결정을 필터로 하여 가시부 영역의 광전류를 측정할 때 분해능이 좋은 slit를 사용한 경우 좋은 sub band gap 광반응을 볼 수 있었다.

• 대한화학회지
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• 제54권1호
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• pp.120-124
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• 2010

용액침전법에 의해 $TiO_2$ 및 $TiO_{2-x}N_x$를 제조하였다. $TiO_{2-x}N_x$ 시료는 순수한 $TiO_2$의 띠 간격인 3.20 eV (390 nm 흡광)로부터 1.77 eV (700 nm 흡광)까지 띠 간격이 줄어들게 되어 자외선 영역 뿐 아니라 가시광선 전체 영역에서도 흡광이 발생하였다. 가시광선에서의 광촉매 활성에서도 $TiO_{2-x}N_x$ 시료는 순수한 $TiO_2$ 및 P-25보다도 더 높은 활성도를 나타냈다.

• 한국정밀공학회지
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• 제26권3호
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• pp.122-128
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• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

• Korean Chemical Engineering Research
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• 제43권1호
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• pp.136-139
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• 2005

집먼지진드기에 의한 호흡기 알레르기 질환의 예방 및 치료를 위해 고려할 수 있는 가장 효율적인 방법 가운데 하나는, 항원이 통과할 수 없는 특수 재질의 커버로 직접 침구류를 씌우는 것이다. 따라서 본 연구에서는 특수 커버 사용 후 먼지 양의 감소와 집먼지진드기 allergen 노출에의 감소 정도를 측정하여 특수 커버의 효과를 검증하였다. 본 연구 결과 우리나라의 일반적인 생활환경에서는 특수 커버의 사용이 집먼지진드기 allergen에 대한 노출을 완전히 막아 주지는 못하였다. 그러나 노출되는 양은 감소시킬 수 있었으며 먼지 양이 감소하는 효과도 있었다.

• Current Photovoltaic Research
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• 제7권3호
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• pp.76-84
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• 2019

Silicon heterojunction solar cells (SHJ) have dominated the photovoltaic market up till now but their conversion performance is practically limited to around 26% compared with the theoretical efficiency limit of 29.4%. A silicon based multi-junction devices are expected to overcome this limitation. In this report, we briefly review the state-of-art characteristic of wide-gap materials which has played a role as top sub-cells in silicon based multi-junction solar cells. In addition, we indicate significantly practical challenges and key issues of these multi-junction combination. Finally, we focus to some characteristics of III-V/c-Si tandem configuration which are reaching highly record performance in multi-junction silicon solar cells.

• Molecules and Cells
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• 제39권11호
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• pp.807-813
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• 2016

Escherichia coli are important indicator organisms, used routinely for the monitoring of water and food safety. For quick, sensitive and real-time detection of E. coli we developed a 2'F modified RNA aptamer Ec3, by Cell-SELEX. The 31 nucleotide truncated Ec3 demonstrated improved binding and low nano-molar affinity to E. coli. The aptamer developed by us out-performs the commercial antibody and aptamer used for E. coli detection. Ec3(31) aptamer based E. coli detection was done using three different detection formats and the assay sensitivities were determined. Conventional Ec3(31)-biotin-streptavidin magnetic separation could detect E. coli with a limit of detection of $1.3{\times}10^6CFU/ml$. Although, optical analytic technique, biolayer interferometry, did not improve the sensitivity of detection for whole cells, a very significant improvement in the detection was seen with the E. coli cell lysate ($5{\times}10^4CFU/ml$). Finally we developed Electrochemical Impedance Spectroscopy (EIS) gap capacitance biosensor that has detection limits of $2{\times}10^4CFU/mL$ of E. coli cells, without any labeling and signal amplification techniques. We believe that our developed method can step towards more complex and real sample application.