• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Development and Reproduction
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• v.7 no.2
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• pp.105-112
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• 2003

Previously, we discovered a new MMP-2 isoform GA110, of which appearance in human follicular fluid(FF) and serum was increased by EDTA. The present study was conducted to investigate how GAI 10 can appear by EDTA. To examine possible involvement of protein disulfide isomerase(PDI), an enzyme responsible for the dimerization of protein via disulfide formation, effect of PDI inhibitor on the appearance of GA110 by EDTA was investigated. When PDI inhibitor added to FF before EDTA treatment, the gelatinolytic activity of GA110 was abolished in a concentration dependent manner. By contrast, the activity of 72 kDa gelatinase increased. However, the PDI inhibitor added to FF after EDTA treatment, the gelatinolytic activity of GA110 was unaffected. To find out the nature of the enzyme which converts 72 kDa gelatinase into GAI 10, chromatographic separation method of FF proteins was done. Using hydroxyapatite column, fractions rich in 72 kDa gelatinase were isolated and pooled. By using this pool as substrate for the 72 kDa converting enzyme, protein fractions containing the converting activity were obtained from chromatographic separation of FF onto glutathione sepharose fast flow column. When immunoblotting was performed on this enzymatically active protein fractions against polyclonal anti-PDI antibody, distinct immunoreactivity was observed, although appeared in smaller molecular weight region. Based on these observations, it is suggested that the appearance of GAI 10 in FF by EDTA treatment could be due to an activation of PDI-like enzyme, which dimerizes 72 kDa gelatinase into GAI 10 via the formation of disulfide bond between molecules.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.171-180
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• 1993

X-ray photoelectron diffraction (XPD) is used to characterize the crystallographically cleaved GaAs(110) surface. By using polar and azimuthal scans of the usual angle-resolved x-ray photoelectron spectroscopy, we get the reconstruction geometry of the clean GaAs(110) surface from the intensity ratio of Ga 3d core-level peaks. The reconstruction parameters are determined by fitting the diffraction pattern with the single scattering cluster (SSC) model, and the results show similar tendencies to those obtained by other techniques.

• Development and Reproduction
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• v.5 no.1
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• pp.23-33
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• 2001

When mammalian oocytes ovulate into the oviduct, associating follicular fluid components are exposed to the oviductal environment, possibly resulting in the mutual interaction between fillicu1ar and oviductal fluids. In the Present study, we have demonstrated for the first time that components of fallicular fluid could be modified by the oviductal fluid. Gelatin zymographic analyses of human follicular fluid (hFF) obtained from IVF patients showed consistently the presence of 110 kDa gelatinase (GA110) in addition to many bands among which 62 kDa gelatinase was predominant. Addition of EDTA or phenanfhroline to the gelatinase substrate buffer during gel incubation abolished GA110 band whereas phenylmethylsulffnyl fluoride (PMSF) did not. In contrast, bovine oviductal fluid(bOF) exhibited only 62 kDa gelatinase. Surprisingly, when bOF was added to hFF in 1:1 ratio and then the mixture was incubated for 3 h at 37$^{\circ}$C, GA110 of hFF disappeared. Disappearance of GA110 by bOF was observed even within 30 min after mixing with hFF. Addition of aminophenylmercuric acetate (APMA) to hFF also abolished enzymatic activity of GA110 but increased the activityof 62 kDa gelatinase. However, APMA abolished many other gelatinases as well unlike bOF. Interestingly, treatment of hFF with EDTA for 3 h remarkably increased the enzymatic activity of GA110 but not that of other gelatinases. Addition of phenanthroline, PMSF or soybean trypsin inhibitor (SBTI) did not affect overall gelatinase activities. Again, addition of bOF to the hFF pretreated with any of the above proteinase inhibitors abolished the appearance of GA110. Human serum also showed GAI 10 of which activity was greatlyenhanced by EDTA treatment. Similar to hFF, serum GA110 also disappeared by the addition of bOF. Human granulosa cell homogenate did not reveal any appreciable gelatinase activity except 92 kDa gelatinase. Anti-human gelatinase A antibody reacted with 62 kDa gelatinase of hFF. Based upon these results, it is concluded that bOF could selectively degrade an isoform of gelatinase A present in hFF and human serum.

• Proceedings of the Korean Society of Embryo Transfer Conference
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• 2002.11a
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• pp.108-108
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• 2002

포유동물의 암컷 생식기관에 존재하는 다양한 종류의 matrix metallo-proteinase (MMP)는 난소와 자궁의 구성성분의 주기적인 변화를 조절하며 이중 난소의 MMP는 난포의 성장과 배란 그리고 퇴화 동안 조직재구성에 매우 중요한 역할을 한다고 알려져 있다. 본 실험에서는 근래에 새로 발견된 사람의 난포액에 존재하는 분자량 약 110kDa인 MMP-2 isoform GA110을 동정하고 자 하였다. 난포액으로부터 GA110 단백질을 분리하기 위하여 난포액에 5mM ethylenediaminetetraacetic acid(EDTA)를 처리한 후 DEAE Sepharose Fast Flow를 이용한 chromatography를 시행하였다. 그 결과, 난포액 단백질들은 0.2M NaCl 의 분획에서 GA110 활성을 나타내었고 anti-human MMP-2 antibody에 대한 면역반응도 뚜렷이 나타났다. DEAE Sepharose Fast Flow에서 얻은 분획 중 GA110의 활성과 면역반응을 모두 나타내는 분획만을 모아 Gelatin Sepharose 4B affinity chromatography로 다시 분리하였다 분리한 결과 resin에 흡착된 단백질 (eluate) 분획들에서 매우 뚜렷한 GA110 gelatinase 활성을 나타내었으며 면역반응 또한 관찰되었다. 이 분획들의 단백질을 농축한 후 zymography를 시행하여 나타난 GA110 단백질 band를 잘라 내었으며 이로부터 단백질을 electroelution하여 농축한 후 reducing agent인 2-mercaptoethanol를 처리하였다. 이를 전기영동 후 MMP-2 (propeptide region) antibody를 사용하여 immunoblotting 한 결과 70-72kDa의 단백질만이 면역반응을 나타내었다. 마지막으로 위와 같이 준비된 70-72kDa 단백질의 아미노산 서열을 Edman degradation 방법으로 분석하였다. 그 결과 이 단백질의 N 말단의 10개의 아미노산 배열 순서가 알려진 사람의 proMMP-2의 전체 배열순서 중 propetide domain의 N 말단에서부터 다섯 번째에서 시작하여 10개의 아미노산의 서열과 정확하게 일치하였다. 위 결과들로 미루어 사람의 난포액에 존재하는 MMP-2의 새로운 isoform인 GA110은 70-72kDa의 ProMMP-2가 disulfide bond를 통해 homodimer 구조를 이루고 있는 것으로 여겨진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.193.1-193.1
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• 2015

실리콘 (Si) 기판 위에 고품질의 갈륨질화물 (GaN) 박막을 성장시키기 위한 노력이 계속되고 있다. 실리콘 기판은 사파이어 기판 보다 경제적인 측면에서 유리하고, 실리콘 직접화 공정에 GaN 소자를 쉽게 접목 가능하다는 장점이 있다. GaN 박막은 2차원 전자 가스형성을 통한 고속소자, 직접 천이형 밴드갭을 이용한 발광소자 및 고전압 소자로써 활용 가능한 물질이다. 종래에는 Si(100) 및 Si(111) 기판 위에 GaN 박막 성장에 대한 연구가 주로 진행되었다. 하지만 대칭성과 격자 불일치도 등 결정학적 특성을 고려할 때 Si(100) 기판 위에 고품질의 GaN 박막을 성장시키는 것은 쉽지 않다. Si(111) 기판은 실리콘 소자 직접화 공정에 적합하지 못한 단점을 가지고 있다. 반면, 최근 Si(110) 기판 위에서 비등방적 변형 제어를 통한 고품질 GaN 박막 성장이 보고 되어 실리콘 집적 소자와 결합한 고전압 소자 및 고속소자 구현에 관한 연구가 진행되고 있다. 본 연구에서는 투과전자현미경 연구를 바탕으로 Si(110) 기판 위에 성장된 GaN의 미세구조에 관한 연구를 소개한다. 열팽창계수의 차이에 의한 GaN 박막 내 결함 생성을 줄이기 위하여 AlN 완충층이 사용되었다. GaN 박막을 암모니아 ($NH_3$) 유량이 다른 조건에서 성장시킴으로써 GaN 박막 미세구조의 암모니아 유량 의존성에 관한 연구를 진행하였다. GaN 박막에서 투과전자현미경 연구와 X-ray 회절 연구를 통하여 결함 거동 및 결정성을 확인하였다. $NH_3$ 유랑이 증가함에 따라 GaN의 성장 거동이 3차원에서 2차원으로 변화됨을 관찰하였다. 또한, 전위밀도의 증가도 확인되었다. $NH_3$ 유량이 낮은 경우 GaN 전위는 AlN와 GaN 경계에 주로 위치하고 GaN 표면 근처에는 전위밀도가 감소하였으나, $NH_3$ 유량이 높을 경우 GaN 박막 표면까지 전위가 관통됨을 확인하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.110-110
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• 1999

• Korean Journal of Crystallography
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• v.7 no.2
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• pp.156-164
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• 1996

The atomic configurations of GaAs ∑19, {331}/{331} [110] and ∑3 {111}/{111} [110] tilt grain boundaries were investigated by HRTEM (High-resolution Transmission Electron Microscopy). The boundary planes lie parallel to the crystallographic planes with high number density of coincident lattice sites for given misorientations, exhibiting particular atomic structural units. Secondary boundary dislocations with a core diameter of about 2nm were observed at boundary steps when a slight deviation from exact ∑-related misorientations occurs in the bicrystal system. The relation between the secondary boundary dislocation and the boundary step was discussed based on a DSC lattice model.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1151-1156
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the InP/lnGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were $1\mum \;and \;0.4\mum$, respectively. The fabrication of InGaAsP microstructures involves front-side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <100> direction since the etching of the beam in the <100> direction is more faster than that of the beam in the <110> and <110> direction.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.447-450
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the Inp/InGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were 1$\mu\textrm{m}$ and 0.4$\mu\textrm{m}$ respectively. The fabrication of InGaAsP microstructures involves front side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <110> direction since the lateral etching of the beam in the <110> direction is more faster than that of the beam in the <100> direction.