• Journal of Institute of Control, Robotics and Systems
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• 제17권12호
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• pp.1210-1218
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• 2011

GA (Genetic Algorithms) are efficient for searching for global optima but may have some problems such as premature convergence, convergence to local extremum and divergence. These phenomena are related to the evolutionary operators. As population diversity converges to low value, the search ability of a GA decreases and premature convergence or converging to local extremum may occur but population diversity converges to high value, then genetic algorithm may diverge. To guarantee that genetic algorithms converge to the global optima, the genetic operators should be chosen properly. In this paper, we analyze the effects of the selection operator, crossover operator, and mutation operator on convergence properties, and propose the sweeping method of mutation probability and elitist propagation rate to maintain the diversity of the GA's population for getting out of the premature convergence. Results of simulation studies verify the feasibility of using these sweeping operators to avoid premature convergence and convergence to local extrema.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1604-1611
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• 2018

Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of $GaAs_xSb_{1-x}$, $In_{1-x}Ga_xSb$, and $InAs_xSb_{1-x}$ with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from $2{\mu}m$ to $12{\mu}m$ in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from $InAs_xSb_{1-x}$ and $In_{1-x}Ga_xSb$ samples even at room temperature show promising potential for IR photodetector applications.

• The Transactions of the Korean Institute of Electrical Engineers D
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• 제53권4호
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• pp.265-276
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• 2004

Genetic Algorithm(GA), that is shown stable performance to find an optimal solution, has been used as a method of solving large-scaled optimization problems with complex constraints in various applications. Since it takes so much time to execute a long computation process for iterative evolution and adaptation. In this paper, a hardware-based adaptive GA was proposed to reduce the serious computation time of the evolutionary process and to improve the accuracy of convergence to optimal solution. The proposed GA, based on steady-state model among continuos generation model, performs an adaptive mutation process with consideration of the evolution flow and the population diversity. The drawback of the GA, premature convergence, was solved by the proposed adaptation. The Performance improvement of convergence accuracy for some kinds of problem and condition reached to 5-100% with equivalent convergence speed to high-speed algorithm. The proposed adaptive GAP(Genetic Algorithm Processor) was implemented on FPGA device Xilinx XCV2000E of EHW board for face recognition.

• ETRI Journal
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• 제34권5호
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• pp.779-782
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• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• Journal of the Korean Society of Industry Convergence
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• 제24권6_2호
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• pp.919-926
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• 2021

In this paper, a study was conducted on the miniaturization of an e-Mobility battery charger module using GaN-FET. GaN-FET is one of the types of WBG devices, and it is a device that exceeds the performance of existing Si power semiconductors. In particular, GaN-FET has the advantage of small packaging size and high switching frequency operation, which is advantageous for miniaturization of power converters. Therefore, a bidirectional DC/DC converter module for e-mobility charging using GaN-FET was developed. To apply to the converter to be developed, analysis is performed on the characteristics of GaN-FET, and after manufacturing a prototype of a bidirectional DC/DC converter module, the efficiency and temperature data of the power converter are analyzed to verify its feasibility.

• ETRI Journal
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• 제28권6호
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• pp.787-789
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• 2006

In this letter, we report that vertically well-aligned ZnO nanowires were grown on GaN epilayers and c-plane sapphire via a vapor-liquid-solid process by introducing a 3 nm Au thin film as a catalyst. In our experiments, epitaxially grown ZnO nanowires on Au-coated GaN were vertically well-aligned, while nanowires normally tilted from the surface when grown on Au-coated c-$Al_2O_3$ substrates. However, pre-growth annealing of the Au thin layer on c-$Al_2O_3$ resulted in the growth of well-aligned nanowires in a normal surface direction. High-resolution transmission electron microscopy measurements showed that the grown nanowires have a hexagonal c-axis orientation with a single-crystalline structure.

• ETRI Journal
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• 제31권6호
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• pp.749-754
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• 2009

The design and performance of an InGaAs/InP transimpedance amplifier and post amplifier for 40 Gb/s receiver applications are presented. We fabricated the 40 Gb/s transimpedance amplifier and post amplifier using InGaAs/InP heterojunction bipolar transistor (HBT) technology. The developed InGaAs/InP HBTs show a cut-off frequency ($f_T$) of 129 GHz and a maximum oscillation frequency ($f_{max}$) of 175 GHz. The developed transimpedance amplifier provides a bandwidth of 33.5 GHz and a gain of 40.1 $dB{\Omega}$. A 40 Gb/s data clean eye with 146 mV amplitude of the transimpedance amplifier module is achieved. The fabricated post amplifier demonstrates a very wide bandwidth of 36 GHz and a gain of 20.2 dB. The post-amplifier module was fabricated using a Teflon PCB substrate and shows a good eye opening and an output voltage swing above 520 mV.

• Current Photovoltaic Research
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• 제8권2호
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• pp.50-53
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• 2020

GaN based photoelectrode has shown good potential owing to its better chemical stability and tunable bandgap with materials such as InN and AlN. Tunable bandgap allows GaN to make the maximum utilization of solar spectrum, which could improve photoelectrode performance. However, the problems about low photoelectrode performance and photo-corrosion still remain. In this study, we attempt to investigate the photoelectrochemical (PEC) properties of phosphor application to InGaN photoelectrode. Experimental result shows YAG:Ce³⁺ and beta-SiALON phosphor result in the highest photoelectrode performance of InGaN.

• International Journal of Fuzzy Logic and Intelligent Systems
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• 제10권4호
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• pp.263-268
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• 2010

The premature convergence of genetic algorithms (GAs) is the most major factor of slow evolution of GAs. In this paper we propose a novel method to solve this problem through competition of multiple offspring of in dividuals. Unlike existing methods, each parents in our method generates multiple offspring and then generated multiple offspring compete each other, finally winner offspring become to real offspring. From this multiple offspring competition, our GA rarel falls into the premature convergence and easily gets out of the local optimum areas without negative effects. This makes our GA fast evolve to the global optimum. Experimental results with four function optimization problems showed that our method was superior to the original GA and had similar performances to the best ones of queen-bee GA with best parameters.

• The Transactions of the Korean Institute of Electrical Engineers D
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• 제52권5호
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• pp.295-304
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• 2003

In this paper, we proposed a hardware-oriented Genetic Algorithm Processor(GAP) based on subpopulation architecture for high-performance convergence and reducing computation time. The proposed architecture was applied to enhancing population diversity for correspondence to premature convergence. In addition, the crossover operator selection and linear ranking subpop selection were newly employed for efficient exploration. As stochastic search space selection through linear ranking and suitable genetic operator selection with respect to the convergence state of each subpopulation was used, the elapsed time of searching optimal solution was shortened. In the experiments, the computation speed was increased by over $10\%$ compared to survival-based GA and Modified-tournament GA. Especially, increased by over $20\%$ in the multi-modal function. The proposed Subpop GA processor was implemented on FPGA device APEX EP20K600EBC652-3 of AGENT 2000 design kit.