• 대한전기학회논문지
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• 제45권4호
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• pp.568-573
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• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• 한국진공학회지
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• 제16권2호
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• pp.141-144
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• 2007

n-GaAs의 시료를 furnace annealing 처리와 laser annealing 처리를 한 후, PR 방법으로 비교 조사하였다. 시료는 Furnace annealing을 5 분간 $400{\sim}800^{\circ}C$에서 처리한 시료와 ArF excimer laser($30{\sim}50\;W$)로 5 분간 Laser annealing 처리 한 시료로 준비하였다. Furnace로 annealing을 한 경우에 주 신호(정점)는 1.43 eV에서 관측되었는데 비해 laser로 annealing 한 샘플은 1.42 eV로 0.01 eV가 더 작게 관측되었다. 이는 laser annealing이 furnace annealing 보다 표면과 내면에서 일어나는 열처리 효과가 더 고르게 일어나가 때문이다.

• 대한금속재료학회지
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• 제47권5호
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• pp.316-321
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• 2009

Co nanoparticles on silica substrates were fabricated by inducing a thin-film dewetting through two different processes-furnace annealing and pulsed-laser annealing. The effects of annealing temperature, film thickness and laser energy density on dewetting morphology and mechanism were investigated. Co thinfilms with thicknesses between 3 to 15 nm were deposited using ion-beam sputtering, and then, in order to induce dewetting, thermally annealed in furnace at temperatures between 600 and $900^{\circ}C$. Some as-deposited films were irradiated using a Nd-YAG pulsed-laser of 266 nm wavelength to induce dewetting in liquid-state. Films annealed in furnace agglomerated to form nanoparticles above $700^{\circ}C$, and those average particle size and spacing were increased with an increase of film thickness. On the laser annealing process, above the energy density of $100mJ/cm^2$, metal films were completely dewetted and the agglomerated particles exhibited greater size uniformity than those on the furnace annealing process. A detailed dewetting mechanism underlaying both processes were discussed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.629-632
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• 1995

The formability of an automobile body panel is very important. So, we performed an annealing condition change for the development of annealing condition with temperature, atmospheric gas and the annealing cycle. Formability was changed under the influenced of the mechanical properties of steel sheet for the automobile body panel. Therefore, ot os important in the BAF(Batch annealing furnace) annealing process. Because mechanical properties were decided on the heat treatment method of the coil. So, we tested the development of mechanical properties according to the heat treatment method at the annealing furnace using the Ax atmospheric gas and the HNx atmospheric gas. As a result of several investigations, we confirmed the following characteristics ; mechanical properties change under the influence of the annealing cycle and atmospheric gas.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.327-331
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• 1997

As demand for various kinds and small lot products has been increasing, batch annealing has been appreciated for its small restiction for the opteration. The cold spot of the coil is very important in the BAF(Batch annealing furnace) annealing process. Because of the annealing cycle time in the BAF, annealing was decided on the cold spot of the coil. So, we tested the effect,variation of cold spot, for hydrogen contents of atmospheric gas at the annealing furnace. As a result of several investigations. We confirmed the following characteristics ; after the heating and soaking,the cold spot of coil moved to 1/3 of coil thickness in the NHx atmospheric gas, but the mid point of the coil thickness is the cold spot in the Ax or .H/sub2. atmospheric gas. Therefore, the use of hydrogen instead of nitrogen as the protective gas,combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.560-564
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• 1996

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving qualify, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for a hydrogen contents of atmospheric gas at annealing furnace. As a result of several investigation. We confirmed for the following characteristics ; improved productivity, uniform heating, improved surface quality, saving energy. Therefore, the use of hydrogen instead of nitrogen as the protective gas, combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국내학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.779-782
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• 1990

Recently batch type cold rolling processes have been replaced by continuous annealing type processes for cold rolled sheets of mild steel and high strength steel in order to obtain higher productivity, labor saving. In the continuous annealing line, it is very important to maintain the target steel strip temperature at the exit side of each furnace. The automation system of continuous annealing line is based on a hierachical composition. This paper shows how to preset the set value of furnace temperature control for the heating section in a continuous annealing line. Saying in other words, this paper presents the development of an adaptive control approach to control the exit strip temperature in the continuous annealing line. There are three parts in this approach; one is a process modelling and another is recursive parameter estimation and the other is a design of temperature controller.

• 한국생산제조학회지
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• 제7권2호
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• pp.108-114
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• 1998

Development on the mechanical properties of steel sheet for the automobile body panel is very important in the BAF(Batch annealing furnace) annealing process. Because of the heat treatment method in the BAF, mechanical properties was decided on the heat treatment method of the coil. So, we tested on the development of mechanical properties according to heat treatment method at the annealing furnace using the Ax(H$_2$75%, $N_2$25%) atmospheric gas and the HNx(H$_2$4%, $N_2$96%) atmospheric gas. As a result of several investigations. We confirmed the following characteristics ; mechanical properties was changed under the influence of the annealing cycle, the heat treatment method and the atmospheric gas. And, elongation in the HNx BAF was better than the Ax BAF. Finally, most important thing in the BAF is using of proper annealing cycle in order to get a good quality.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.365-371
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• 2003

We prepared silicon on insulator(SOI) wafer pairs of Si/1800${\AA}$ -SiO$_2$ ∥ 1800${\AA}$ -SiO$_2$/Si using water direct bonding method. Wafer pairs bonded at room-temperature were annealed by a normal furnace system or a fast linear annealing(FLA) equipment, and the micro-structure of bonding interfaces for each annealing method was investigated. Upper wafer of bonded pairs was polished to be 50 $\mu\textrm{m}$ by chemical mechanical polishing(CMP) process to confirm the real application. Defects and bonding area of bonded water pairs were observed by optical images. Electrical and mechanical properties were characterized by measuring leakage current for sweeping to 120 V, and by observing the change of wafer curvature with annealing process, respectively. FLA process was superior to normal furnace process in aspects of bonding area, I-V property, and stress generation.