• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.17-22
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• 2007

This paper presents a baseband complex bandpass filter for PHS applications with a new automatic tuning method. The full-CMOS PHS transceiver is implemented by adopting the Low-IF architecture to overcome the DCoffset problems. To meet the Adjacent Channel Selectivity (ACS) performance, the 3rd-order Chebyshev complex bandpass filter is designed as the baseband channel-select filter. The new corner frequency tuning method is proposed to compensate the process variation. This method can reduce the noise level due to MOS switches. The filter was fabricated using a 0.35{\mu}m$ CMOS process, and the power consumption is 12mW.

• Journal of Advanced Information Technology and Convergence
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• v.10 no.1
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• pp.37-43
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• 2020

This paper presents analysis of passive metal interconnection of the LNA block in CMOS integrated circuit. The performance of circuit is affected by the geometry of RF signal path. To investigate the effect of interconnection lines, a cascode LNA is designed, and circuit simulations with full-wave electromagnetic (EM) simulations are executed for different positions of a component. As the results, the position of an external capacitor (C_ex) changes the parasitic capacitance of electric coupling; the placement of component affects the circuit performance. This analysis of interconnection line is helpful to analyze the amount of electromagnetic coupling between the lines, and useful to choose the signal path in the layout design. The target of this work is the RF LNA enabling the seamless connection of wireless data network and the following standards have to be supported in multi-band (WCDMA: 2.11~ 2.17 GHz, CDMA200 1x : 1.84~1.87 GHz, WiBro : 2.3~2.4GHz) mobile application. This work has been simulated and verified by Cadence spectre RF tool and Ansoft HFSS. And also, this work has been implemented in a 0.13um RF CMOS technology process.

• Korean Journal of Remote Sensing
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• v.31 no.2
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• pp.85-99
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• 2015

TDI CCD sensors are being used for most of the electro-optical camera mounted on the low earth orbit satellite to meet high performance requirements such as SNR and MTF. However, the CMOS sensors which have a lot of implementation advantages over the CCD, are being upgraded to have the TDI function. A few methods for improving the issue of motion blur which is apparent in the CMOS sensor than the CCD sensor, are being introduced. Each pixel can be divided into a few sub-pixels to be read more than once as is the same case with three or four phased CCDs. The fill factor can be reduced intentionally or even a kind of mask can also be implemented at the edge of pixels to reduce the blur. The motion blur can also be reduced in the TDI CMOS sensor by reducing the integration time from the full line scan time. Because the integration time can be controlled easily by the versatile control electronics, one of two performance parameters, MTF and SNR, can be concentrated dynamically depending on the aim of target imaging. MATLAB simulation has been performed and the results are presented in this paper. The goal of the simulation is to compare dynamic MTFs affected by the different methods for reducing the motion blur in the TDI CMOS sensor.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.211-219
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• 2001

This paper describes a read-only CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage using the magnetic field generated from a reader. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit which has almost constant damping rate under the variations of the distance between the transponder and the reader has been employed for impedance modulation. The designed circuit has been fabricated using a 0.65${\mu}{\textrm}{m}$2-poly, 2-metal CMOS process. Die area is 0.9mm$\times$0.4mm. Measurement results show that it has a constant damping rate of around 20~25% and a data transmission rate of 3.9kbps at a 125KHz RF carrier. The power required for reading operation is about 100㎼. The measured reading distance is around 7cm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.205-210
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• 2001

In this paper, a novel compound mode logic based on the advantage of both CMOS logic and pass-transistor logic(PTL) is proposed. From the experimental results, the power-delay products of the compound mode logic is about 22% lower than that of the conventional CMOS logic, when we design a full adder. With the proposed logic, a high performance 32$\times$32-bit multiplier has been fabricated with 0.6um CMOS technology. It is composed of an improved sign select Booth encoder, an efficient data compressor based on the compound mode logic, and a 64-bit conditional sum adder with separated carry generation block. The Proposed 32$\times$32-bit multiplier is composed of 28,732 transistors with an active area of 1.59$\times$1.68 mm2 except for the testing circuits. From the measured results, the multiplication time of the 32$\times$32-bit multiplier is 9.8㎱ at a 3.3V power supply, and it consumes about 186㎽ at 100MHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.59-64
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• 2006

The slope of the ramp generator in a single slope ADC(analog-to-digital converter) suffers from process and frequency variation. This variation in ramp slope causes ADC gain variation and eventually limits the performance of the ISP(image signal processing) in a CIS(CMOS image sensor) that uses the single slope ADC. This paper proposes a ramp slope BISC(built-in-self-calibration) scheme for CIS. The CIS with proposed BISC was fabricated with a $0.35{\mu}m$ process. The measurement results show that the proposed architecture effectively calibrate the ramp slope against process and clock frequency variation. The silicon area overhead is less than $0.7\%$ of the full chip area.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.412-415
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• 2015

This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.267-270
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• 2014

This paper presents a CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter and a DC-DC boost converter. The AC-DC converter rectifies the AC signals from vibration devices(PZT), and the DC-DC boost converter generates a boosted and regulated output at a predefined level. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. A MPPT(Maximum Power Point Tracking) control is also employed to harvest the maximum power from the PZT. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $530um{\times}325um$. Simulation results shows that the maximum efficiencies of the AC-DC converter and DC-DC boost converter are 97.7% and 89.2%, respectively. The maximum efficiency of the entire system is 87.2%.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.43 no.4 s.310
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• pp.53-59
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• 2006

This paper describes the new design technique of full wave rectifier (FWR) for precise measurement instrument and the chip implementation of this FWR circuit with measurement results. Conventional circuits have some problems of complex design and limited output range( $VDD/2{\sim}VLIIV1IT+$). Proposed FWR circuit was simply designed with two 2x1 MUXs, one high speed comparator, and one differential difference amplifier(DDA). One rail-to-rail differential difference amplifier(DDA) performs the DC level shifting to VSS and 2X amplification simultaneously, and enables the full range ($Vss{\sim}VDD$) operation. The proposed FWR circuits shows more than 50% reduction of chip area and power consumption compared to conventional one. Proposed circuit was implemented with 0.35um 1-poly 2-metal CMOS process. Core size is $150um{\times}450um$ and power dissipation is 840uW with 3.3V single supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.830-833
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• 2007

In this paper, we implemented a $17{\times}17b$ binary digital multiplier using radix-4 Booth;s algorithmand proposed an efficient testing methodology for the full-custom design. A two-stage pipeline architecture was applied to achieve higher throughput and 4:2 adders were used for regular layout structure in the Wallace tree partition. Several chips were fabricated using LG Semicon 0.6-um 3-Metal N-well CMOS technology. We did fault simulations efficiently using the proposed test method resulting in the reduction of the number of faulty nodes by 88%. The chip contains 9115 transistors and the core area occupies $1135^*1545$ mm2. The functional tests using ATS-2 tester showed that it can operate with 24 MHz clock at 5.0 V at room temperature.