• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.10
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• pp.93-100
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• 2001

The analysis and control of a new type unsymmetrical slotted self-bearing step motor for small angle control is presented. The motor actuator is used for both motor and bearing functionality without any additional coil windings or electromagnets for bearing functionality. A circular-arc, straight-line permeance model for the fringing effect is presented. An unsymmetrical slotted self-bearing step motor layout and control algorithm are described. A new control current generation method using the electromagnets layout geometry, which needs no additional current for bearing functionality, is proposed. As the result of this analysis the fringing effect largely influences on the system characteristics. especially in torque. Even if the bearing functionality is added into the motor functionality, it is shown that the magnitude of torque is not changed.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.2
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• pp.99-105
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• 2011

The magnetic circuit analysis excluding flux loss and fringing effect often gives a result with unignorable error, when compared with real system. But, it is not easy to make a complete magnetic circuit model with the loss effects. This paper introduces a relatively simple method to build the model including the flux loss and fringing effect, in which the paths of leaked flux are simplified in terms of circular arcs and straight lines. After modification of the model, the error of about 36 % in maximum between the magnetic circuit analysis and FEM analysis is reduced to about 7 %.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.278-283
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• 1996

We constructed a single path cylindrical mirror analyser(CMA) using field terminator methods. With computer simulation, the best fit voltage ratio and position of the field terminaor was determined with maintain log-scale equipotential line near both end of the CMA. Then we construct field terminator with voltage divider of metal-oxide resisters which reduces the fringe field effect. The resolving power of the CMA was better than $\Delta$E/E=0.4%.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.11
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• pp.93-99
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• 2014

The method of moments is applied to numerically compute the electrostatic capacitance of a parallel-plate rectangular capacitor of finite area. Each plate is discretized into 900 patches per unit area to ensure a high accuracy of computation. To further enhance computational results, the impedance matrix elements are additionally evaluated in the case that the observation patch is located above or below the source patch in the vertical direction. To examine the fringing effect at the edges of the capacitor, the normalized capacitances are computed as a function of separation distance. After these results have been verified by Palmer's formula, this method is extended to the computation of capacitances between two different size plates.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1343-1348
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• 2014

The low frequency noise in Silicon Nanowire Field Effect Transistors is analyzed by characterizing the gate electrode dependence on various geometrical parameters. It shows that gate electrodes have a strong impact in the flicker noise of Silicon Nanowire Field effect transistors. Optimization of gate electrode was done by comparing different performance metrics such a DIBL, SS, $I_{on}/I_{off}$ and fringing capacitance using TCAD simulations. Molybdenum based gate electrode showed significant improvement in terms of high drive current, Low DIBL and high $I_{on}/I_{off}$. The noise power sepctral density is reduced by characterizing the device at higher frequencies. Silicon Nanowire with Si3N4 spacer decreases the drain current spectral density which interms reduces the fringing fields there by decreasing the flicker noise.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.101-102
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• 2011

The attraction force is an important parameter for permanent-magnet(PM) linear machines. This paper aims to analysis lumped magnetic circuit model of a magnetic levitation system. It accounts for the fringing effect and leakage flux which may greatly affect the accuracy of the analytical model for the optimal lumped magnetic circuit model. consequentially it will be able to apply to prospective permanent-magnet(PM) linear machines for accurate analysis.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.561-563
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• 2012

In this work, tunable capacitors using a finger-type electrode are designed and characterized for frequency-agile RF circuit applications. Their top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter which results in enhanced fringing-electric fields in order to improve their tunability. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are characterized in terms of effective capacitance and tunablility. Their effective capacitance and tunability with the long perimeter increase 24~40% and 7~12%, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz, compared to the conventional ones.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.935-942
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• 2006

In this paper, a novel theory of realizing the series capacitor with broadside coupled suspended substrate stripline (BCSSS) is proposed. The proposed theory is relatively simple because the method of odd mode analysis is only applied: However, this theory supplies reliable result by considering the line effective width and end effect caused by the fringing field. The simulation results are presented to compare and analyze the characteristics of the ideal lumped capacitor and the coupled line capacitor. Also, the capacitive gap coupled line band-pass filter based on the proposed theory are designed and fabricated. The results prove successfully the validity of the proposed theory.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.990-1001
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• 2015

This paper presents analysis of Switched Reluctance Machine (SRM) using Geometry Based Analytical Model (GBAM), Finite Element Analysis (FEA) and Fourier Series Model (FSM) with curve fitting technique. Further a Transient Analysis (TA) technique is proposed to corroborate the analysis. The main aim of this paper is to give in depth procedure in developing a Geometry Based Analytical Model of Switched Reluctance Machine which is very accurate and simple. The GBAM is developed for the specifications obtained from the manufacturer and magnetizing characteristic of the material used for the construction. Precise values of the parameters like Magneto Motive Force (MMF), flux linkage, inductance and torque are obtained for various rotor positions taking into account the Fringing Effect (FE). The FEA model is developed using MagNet7.1.1 for the same machine geometry used in GBAM and the results are compared with GBAM. Further another analytical model called Fourier Series Model is developed to justify the accuracy of the results obtained by the methods GBAM and FEA model. A prototype of microcontroller based SRM drive system is constructed for validating the analysis and the results are reported.