• 한국통신학회논문지
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• 제21권7호
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• pp.1726-1733
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• 1996

A 3V-50MHz analog CMOS continuous-time current-mode filter with a negative resistance load(NRL) is proposed. In order to design a current-mode current integrator, a modified basic current mirror with a NRL to increase the output resistance is employed. the inherent circuit structure of the designed NRL current integrator, which minimizes the internal circuit nodes and enhances the gain bandwidth product, is capable of making the filter operate at the high frequency. The third order Butterworth low pass filter utilizing the designed NRL current integrator is synthesized and simulated with a 1.5.mu.m CMOS n-well proess. Simulation result shows the cutoff frequency of 50MHz and power consumption of 2.4mW/pole with a 3V power supply.

• 한국해양공학회지
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• 제11권2호
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• pp.91-99
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• 1997

This paper presents theoretical formulations and numerical computations for predicting first-and second-order hydrodynamic force on a ship advvancing in waves. The theoretical formulation leads to linearized radiation and diffration problems solving the three-dimensional Green function integral equations over the mean wetted body surface. Green function representing a translating and pulsating source potantial for infinite water depth is used. In order to solve integral equations for three dimentional flows using Green function efficiently, the Hoff's method is adopted for numerical calculation of the Green function. Based on the first-order solution, the mean seconder-order forces and moments are obtained by directly integrating second-order pressure over the mean wetted body surface. The calculated items are carried out for analyzing the seakeeping characteristics of Series 60. The calculated items are hydrodynamic coefficients, wave exciting forces, frequency response functions and addd resistance in waves.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.525-536
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• 2014

Recently, the first generation of mass production of FinFET-based microprocessors has begun, and scaling of FinFET transistors is ongoing. Traditional capacitance and resistance models cannot be applied to nonplanar-gate transistors like FinFETs. Although scaling of nanoscale FinFETs may alleviate electrostatic limitations, parasitic capacitances and resistances increase owing to the increasing proximity of the source/drain (S/D) region and metal contact. In this paper, we develop analytical models of parasitic components of FinFETs that employ the raised source/drain structure and metal contact. The accuracy of the proposed model is verified with the results of a 3-D field solver, Raphael. We also investigate the effects of layout changes on the parasitic components and the current-gain cutoff frequency ($f_T$). The optimal FinFET layout design for RF performance is predicted using the proposed analytical models. The proposed analytical model can be implemented as a compact model for accurate circuit simulations.

• 한국항만학회지
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• 제14권4호
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• pp.475-479
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• 2000

A possibility of the implementation of a quartz crystal sensor to the determination of chemical oxygen demand is examined by checking the electrochemical behavior of the sensor in a glucose solution. Since the surface of a quartz crystal has to be oxidized, a relatively active metal is coated on the surface of a usual 9 MHz AT-cut crystal. The electrochemical behavior is investigated by measuring the changes of current, resonant frequency and resonant resistance while a constant potential is applied. The crystal is installed in a specially designed container, and a quartz crystal analyzer is utilized to measure the frequency and resistance simultaneously. The variations of the measurements are examined at different concentrations of glucose solution, and a proper relation between the concentrations of glucose solution, and a proper relation between the concentration and the measurements is analyzed. As a result, it is found that a linear relation between the concentration of less than 900 ppm and the peak current when a constant potential of -180 mV (SSCE) is applied. The relation can be utilized for the determination of glucose concentration in sea water, and considering a direct relation between gluose concentration and chemical oxygen demand tells a possibility of the measurement of chemical oxygen demand using quartz crystal oscillators.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(II)
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• pp.1163-1165
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• 1987

A novel temperature difference-to-frequency converter using two resistance temperature detectors (RTDs) has been developed. The resistance difference of two RTDs is converted into its equivalent inductance to form the resonant circuit of the Colpitts oscillator. The conversion sensitivity of $16\;Hz/^{\circ}C$ and the residual nonlinearity less than 2.15% over the temperature difference range from $35^{\circ}C$ to $155^{\circ}C$ are obtained by the prototype converter. The frequency drift of oscillator itself is ${\pm}0.5\;Hz$. Thus, the minimum detectable temperature difference is estimated to be ${\pm}0.013^{\circ}C$. The proposed converter, except for two RTDs, can be fabricated in monolithic IC form.

• Journal of Welding and Joining
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• 제5권2호
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• pp.44-52
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• 1987

The fracture toughness, $J_{IC}$ of high frequency electric resistance welded steel pipe for smooth and side-grooved CT specimen was evaluated by unloading compliance method. The crack growth, .${\delta}a$ was obtained from the equation of Donald and Saxena & Hudak, and $J_{IC}$ was determined from the curve of J-${\delta}a$ relations. The crack growth on the experiment using unloading compliance method is underestimated as compared with ${\delta}a$ measured directly by the SEM, so the reliability of $J_{IC}$ from saxena & Hudak equation is large than that from Donald. The $J_{IC}$ value of side-grooved CT Specimen is estimated less than that of smooth, and this is the effect of the side-groove, the shear-lip of crack tip and the reduction of crack tunnelling phenomena.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.419-422
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• 1998

There are lots of researches which are using quratz crystal in order to apply it to sensors, for example, mass detect sensor, humidity sensor, gas sensor, etc. We tried to apply quartz crystal to the sensor using the resonant frequency and the resistance properties. Four kinds of fatty acid which are having the same head group are coated at the surface of quartz crystal, the shift of the resonant frequency and the resistance are observed according to length of the tail group. Myristic acid$(C_{14})$, palmitic acid$(C_16)$, stearic acid$(C_{18})$, and arachidic acid$(C_{20})$ were coated by Langmuir-Blodgett(LB) technique. As results, the resonant frequency shift was observed linearly. However, there are some difference compared with Sauerbrey's equation. It can be explained by the effect of the temperature property and/or humidity. On the other hand, the shift of the resistance was observed nonlinearly.

• 조명전기설비학회논문지
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• 제23권8호
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• pp.80-85
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• 2009

본 논문에서는 저항과 클록 주파수 변동에 의한 문제를 효과적으로 감소시킬 수 있는 풀 디지털 정전용량 방식의 터치키를 제안한다. 제안된 방식은 측정하고자 하는 정전용량 두 개와 두 정전용량 사이의 저항으로 구성되어 있으며, 각 정전용량과 저항의 지연을 각각 측정한 후 두 지연의 비를 구한다. 양자화 오차를 무시할 경우 두 지연의 비는 측정하고자 하는 두 정전용량의 비로 표시되어 저항 값과 클럭 주파수와 무관하다. 실험결과에서도 제안된 방법이 저항과 클록주파수에 의한 변동을 효과적으로 줄일 있음을 보였으며, 제안된 방법의 정전용량 해상도가 1.04[pF]여서 터치키로 사용될 수 있음을 보였다.

• 전기전자학회논문지
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• 제12권3호
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• pp.167-171
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• 2008

저항형 센서 브리지를 인터페이싱 하기 위한 저항 편차-주파수 변환기를 제시하였다. 이 변환기는 선형 연산 트랜스컨덕턴스 증폭기(linear operational transconductance amplifier: LOTA)와 전류-제어 발진기(current-controlled oscillator: CCO)로 구성된다. 제시된 변환기를 상업용 개별 소자들을 이용하여 SPICE 시뮬레이션 하였다. 시뮬레이션 결과는, 변환기가 16.90 kHz/${\Omega}$의 변환 감도와 ${\pm}$0.03 %의 최대 선형 오차를 가진다는 것을 보여준다.

• Journal of Power Electronics
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• 제10권6호
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• pp.749-761
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• 2010

The switching frequency of a power device is a very important parameter in the design of a parallel active power filter (PAPF), but so far, very little discussion has been conducted on it in a quantitative manner in previous publications. In this paper, an extensive analysis on the effects of the switching frequency on the performance of a PAPF is made, and a specification of the switching frequency values with different compensation results is presented. A first-order inertia element and a second-order oscillation element are considered as approximate models of a PAPF, respectively. The compensation characteristic for each order of harmonic current is obtained at different switching frequencies. Then, the THDs of each model for the system loads of a rectifier with resistance and inductance loads are proposed. The compensation results of a PAPF controlled as a first-order inertia element are better than those of a PAPF controlled as a second-order oscillation element. With two types of system loads which are rectifier with resistance and inductance loads and rectifier with resistance, inductance and capacitance loads, the THDs of the source current after compensation are presented with different switching frequencies. The compensation characteristics for the most widely used digital control system are investigated. The situation with an analog control is the theoretical characteristic and it is the best situation. The compensation characteristic of the digital control is worse than the compensation characteristic of the theoretical characteristic. Based on these analyses, the specifications of compensation characteristics with different switching frequencies are quite straightforward. Finally, a practical design example is studied to verify the application.