• Title/Summary/Keyword: Frequency gain

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The Design of High Cain Channel Amplifier for Terrestial Repeater of Digital Satellite Broadcasting (디지털 위성방송 지상 리피터용 고 이득 채널 증폭기 설계)

  • 이강훈;이영철
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.3
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    • pp.485-491
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    • 2003
  • In this paper, We designed the multi-stage amplifier having high gain/low noise characteristics for terrestial repeater of direct digital satellite broadcasting system. In the design the amplifier, we optimized the parameters to have the stable operation between gain, noise figure and stability. The first stage of amplifier can be specified low noise impedance matching, 2nd stage to 5th stage show constant gain and stable operation and final stage of amplifier shows high gain impedance matching. As a result of experiment at the frequency of digital satellite terrestial, show 68dB gain under 2,4dB noise figure and 63dB dynamic range in the 11.7GHz-12.7GHz frequency range, it is a good agreement of communication channel amplifier requirements for satellite terrestial repeater.

Design of a 1~10 GHz High Gain Current Reused Low Noise Amplifier in 0.18 ㎛ CMOS Technology

  • Seong, Nack-Gyun;Jang, Yo-Han;Choi, Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.11 no.1
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    • pp.27-33
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    • 2011
  • In this paper, we propose a high gain, current reused ultra wideband (UWB) low noise amplifier (LNA) that uses TSMC 0.18 ${\mu}m$ CMOS technology. To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilized in the first stage. A ${\pi}$-type LC network is adopted in the second stage to achieve sufficient gain over the entire frequency band. The proposed UWB LNA has a voltage gain of 12.9~18.1 dB and a noise figure (NF) of 4.05~6.21 dB over the frequency band of interest (1~10 GHz). The total power consumption of the proposed UWB LNA is 10.1 mW from a 1.4 V supply voltage, and the chip area is $0.95{\times}0.9$ mm.

Improved negative capacitance circuit stable with a low gain margin (이득 여유가 작아도 안정한 개선된 네가티브 커패시턴스 회로)

  • 김영필;황인덕
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.40 no.6
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    • pp.68-77
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    • 2003
  • An improved negative capacitance circuit that cancels out input impedance of a front-end in a bioimpedance measurement and operates stably with a low gain margin has been proposed. Since the proposed circuit comprises wide-band operational amplifiers, selecting operational amplifiers is easy, while an operational amplifier of prefer bandwidth should be chosen to apply conventional circuit. Also, since gain margin can be controlled by a feedback resistor connected serially with a feedback capacitor, gain margin is tuneable with a potentiometer. The input impedance of the proposed circuit is two times larger than that of the conventional circuit and 40-times than that without a negative capacitance circuit. Furthermore, closed-loop phase response of the proposed circuit is better than that of the conventional circuit or without a negative capacitance circuit. Above all, for the proposed circuit, the frequency at which a gain peaking occurs is higher than the frequency at which the loop gain becomes a maximum. Thus, the proposed circuit is not affected by a gain peaking and can be operated with a very low gain margin.

Analysis of Gain and Frequency in a DFB laser with Cleaved Facets (결정 벽개면을 갖는 DFB 레이저의 이득과 주파수 분석)

  • Lee, Chang-Seok;Kwon, Kee-Young;Ki, Jang-Geun;Cho, Hyun-Mook
    • Journal of Software Assessment and Valuation
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    • v.16 no.2
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    • pp.117-125
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    • 2020
  • In this paper, when both the refractive index grating and the gain grating exist in a 1.55um DFB laser with two cleaved mirror facets, when the phase of ρl is fixed to 0 and the phase of ρr is changed to -π/2, π, π/2, 0, the change in frequency and oscillation gain was theoretically analyzed. In the case of δL<0, the oscillation gain required for lasing is the lowest and the most stable frequency operation is obtained in the case of (ρl phase=0, ρr phase=0) and κL=10, when κL is varied from 0.1 to 10. In the case of δL>0, when (ρl phase=0, ρr phase=π) and κL=10, the oscillation gain required for lasing is the lowest and the difference between the oscillation gains of the higher-order modes is large so that the most stable frequency operation is obtained.

Analysis of Cochlear Characteristics Using Evoked Otoacoustic Emission (유발이음향 방사현상을 이용한 와우각 특성 해석)

  • Lee, Nam-Ho;Choi, Jin-Young;Cho, Jin-Ho;Lee, Kuhn-Il
    • Proceedings of the KOSOMBE Conference
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    • v.1992 no.05
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    • pp.133-138
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    • 1992
  • Evoked otoacoustic emission (e-OAE) signals are measured from adult and analyzed by computer. Stimulation and detection are repeated and averaged 1000 times for noise cancellation. e-OAE signals are analyzed on frequency domain and time domain. The frequency domain analysis reveals that frequency of stimulus and emission has lineal relationship in 50 dB input sound amplitude. This result altos the cross correlation method to be applied for latency calculation. As the stimulus frequency grows higher, the latency tine is shorter and the gain or emission signal becomes greater. We introduced two mathmatical functions to identify these latecy and gain. These results can be utilized for cochlear modeling.

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Control Valve Positioner and Its effect on a Gas Turbine MW Control (공정제어루프 최종 조작부의 동작특성에 관한 연구)

  • Kim, Jong-An;Shin, Yoon-Oh
    • Proceedings of the KIEE Conference
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    • 1998.07b
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    • pp.728-730
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    • 1998
  • The control valve positioner is a high gain plain proportional controller which measures the valve stem position and compares it to its setpoint which is the primary controller output. The positioner in effect is the cascade slave of the primary controller. In order for a cascade slave to be effecttive, it must be fast enough compared to the speed of its set point change. This paper describes the positioner transfer function and its effect on the entire control loop characteristic based on the simulation results. The result showed that the control valve and positioner determined the gain and phase angle in the high frequency range, while the primary controller and process determined those of the low frequency range. We can also anticipate the combined characteristics in the whole frequency range when each element's frequency response is known.

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Design of Multi-Band VCO with Fast AFC Technique (광대역 고속 AFC 기법을 적용한 다중 대역 VCO의 설계)

  • Ahn, Tae-Won;Yoon, Chan-Geun;Lee, Won-Seok;Moon, Yong
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.983-984
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    • 2006
  • Multi-band VCO with fast response adaptive frequency calibration (AFC) technique is designed in 1.8V $0.18{\mu}m$ CMOS process. The possible operation is verified for 5.8GHz band, 5.2GHz band, and 2.4GHz band using the switchable L-C resonators for 802.11a/b/g WLAN applications. To linearize its frequency-voltage gain, optimized multiple MOS varactor biasing technique is used. In order to operate in each band frequency range with reduced VCO gain, 4-bit digitally controlled switched-capacitor bank is used and a wide-range digital logic quadricorrelator is implemented for fast frequency detector.

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Small-Signal Analysis of a Differential Two-Stage Folded-Cascode CMOS Op Amp

  • Yu, Sang Dae
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.768-776
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    • 2014
  • Using a simplified high-frequency small-signal equivalent circuit model for BSIM3 MOSFET, the fully differential two-stage folded-cascode CMOS operational amplifier is analyzed to obtain its small-signal voltage transfer function. As a result, the expressions for dc gain, five zero frequencies, five pole frequencies, unity-gain frequency, and phase margin are derived for op amp design using design equations. Then the analysis result is verified through the comparison with Spice simulations of both a high speed op amp and a low power op amp designed for the $0.13{\mu}m$ CMOS process.

Optimum Ge Profile for Higher Cut Off Frequency of SiGe HBT (SiGe HBT 소자의 높은 차단 주파수 특성을 위한 Ge profile 연구)

  • Kim, Sung-Hoon;Kim, Kyung-Hae;Lee, Hoong-Joo;Ryum, Byung-Ryul;Yi, Jun-Sin
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1803-1805
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    • 2000
  • This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with 15% triangular Ge profile shows higher cut-off frequency and DC current gain than that with 19% trapezoidal Ge profile. The cut-off frequency and BC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively.

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Base Profile Simulation of SiGe Heterojunction Bipolar Transistor for High Frequency Applications (고주파수용 SiGe HBT의 베이스 프로파일 시뮬레이션에 관한 연구)

  • Lee W.H.;Lee J.H.;Park B.S.;Lee H.J.
    • Proceedings of the KAIS Fall Conference
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    • 2004.06a
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    • pp.172-175
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    • 2004
  • This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's) for high frequency application. Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. An HBT with $15\%$ triangular Ge profile shows higher cut-off frequency and DC current gain than that with $19\%$ trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42GHz to 84GHz and from 200 to 600, respectively. The SiGe HBT has been fabricated using a production CVD reactor.

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